JP7181869B2 - 硬化性半導体組成物 - Google Patents
硬化性半導体組成物 Download PDFInfo
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Description
本願は以下の態様にも関する。
(1) 過酸化物硬化性半導体組成物であって、25~40重量%のビニルアセテートモノマー単位含有量を有する、50~78重量パーセント(重量%)の(A)架橋性エチレン-ビニルアセテートコポリマー(架橋性ホストコポリマー)と、20~48重量%の(B)カーボンブラックと、0.1~2.5重量%の(C)アミドワックスと、0.1~2.5重量%の(D)シリコーンオイルであって、(C)重量%+(D)重量%の合計が1.0~5.0重量%である、シリコーンオイルと、0.1~1.5重量%の(E)酸化防止剤と、0.1~1.5重量%の(F)有機過酸化物を含み、全ての重量%が、前記過酸化物硬化性半導体組成物の総重量に基づき、前記過酸化物硬化性半導体組成物の総重量が、100.0重量%である、過酸化物硬化性半導体組成物。
(2) 前記(A)架橋性エチレン-ビニルアセテートコポリマーが、26~35重量%のビニルアセテートモノマー単位含有量、および/またはASTM D1238-04に従って測定された10分当たり1~80グラム(g/10分)のメルトインデックス(190℃、2.16キログラム(kg))(「I 2 」)を有する、エチレンビニルアセテートコポリマーである、前記(1)に記載の過酸化物硬化性半導体組成物。
(3) 前記(C)アミドワックスが、ステアラミド、オレアミド、エルカミド、エチレンビス(ステアラミド)、エチレンビス(オレアミド)、エチレンビス(エルカミド)、ベヘナミド、オレイルパルミタミド、およびそれらの任意の2つ以上の組み合わせであり、ならびに/あるいは前記(D)シリコーンオイルが、(i)ポリジオルガノシロキサン流体であって、各オルガノ基が独立してメチル、エチル、ビニル、もしくはフェニルである、ポリジオルガノシロキサン流体、または(ii)ポリ(メチル、フェニル)シロキサン流体、ポリ(メチル、メチル)(メチル、フェニル)シロキサン流体、もしくはポリジメチルシロキサン流体、または、(iii)式[(CH 3 ) 3 SiO 1/2 ]のM単位および式[(CH 3 ) 2 SiO 2/2 ]のD単位を含有するポリジメチルシロキサン(PDMS)流体であって、存在する場合に式[SiO 4/2 ]のQ単位と存在する場合に式[CH 3 SiO 3/2 ]のT単位との合計が、前記PDMS流体の総重量に基づいて0~5重量%である、ポリジメチルシロキサン(PDMS)流体である、前記(1)または(2)に記載の過酸化物硬化性半導体組成物。
(4) 前記(E)酸化防止剤が、ビス(4-(1-メチル-1-フェニルエチル)フェニル)アミン、2,2’-メチレン-ビス(4-メチル-6-t-ブチルフェノール)、2,2’-チオビス(2-t-ブチル-5-メチルフェノール、2,2’-チオビス(6-t-ブチル-4-メチルフェノール)、トリス[(4-tert-ブチル-3-ヒドロキシ-2,6-ジメチルフェニル)メチル]-1,3,5-トリアジン-2,4,6-トリオン、ペンタエリスリトールテトラキス(3-(3,5-ビス(1,1-ジメチルエチル)-4-ヒドロキシフェニル)プロピオネート、3,5-ビス(1,1-ジメチルエチル)-4-ヒドロキシベンゼンプロパン酸2,2’-チオジエタンジイルエステル、もしくはジステアリルチオジプロピオネートであり、および/または前記(F)有機過酸化物が、式R O -O-O-R O を有し、式中、各R O が独立して(C 1 -C 20 )アルキル基または(C 6 -C 20 )アリール基である、前記(1)~(3)のいずれかに記載の過酸化物硬化性半導体組成物。
(5) 添加剤(i)200~1,000百万分の一(ppm)の(G)ポリジメチルシロキサン(PDMS)流体((D)と同じかまたは異なる)、(ii)(H)ヒンダードアミン安定剤、または(iii)(I)難燃剤、または(iv)(J)水トリー遅延剤もしくは電気トリー遅延剤、または(v)(K)着色剤、または(vi)(L)液体芳香族もしくは飽和炭化水素、または(vii)(M)メチルラジカル捕捉剤、または(viii)(i)~(vii)のうちの任意の2つ以上の組み合わせをさらに含み、前記添加剤(G)~(M)の合計重量が、前記過酸化物硬化性半導体組成物の総重量の>0~19.8重量%である、前記(1)~(4)のいずれかに記載の過酸化物硬化性半導体組成物。
(6) 前記(1)~(5)のいずれかに記載の過酸化物硬化性半導体組成物を作製する方法であって、有効量の構成成分(A)~(F)を接触させて、前記過酸化物硬化性半導体組成物を得ることを含む、方法。
(7) 前記(1)~(5)のいずれかに記載の過酸化物硬化性半導体組成物を硬化させた反応生成物である、過酸化物硬化半導体生成物。
(8) 前記(7)に記載の過酸化物硬化半導体生成物の成形体を含む、製品。
(9) 伝導性コアと、前記伝導性コアを少なくとも部分的に覆う絶縁層と、を備える、被覆導体であって、前記絶縁層の少なくとも一部分が、前記(1)~(5)のいずれかに記載の過酸化物硬化性半導体組成物または前記(7)に記載の過酸化物硬化半導体生成物を含む、被覆導体。
(10) 電気を伝導する方法であって、前記(9)に記載の前記被覆導体の前記伝導性コア全体に電圧を印加して、前記伝導性コアを通る電気の流れを発生させることを含む、方法。
Claims (10)
- 過酸化物硬化性半導体組成物であって、
25~40重量%のビニルアセテートモノマー単位含有量を有する、50~78重量パーセント(重量%)の(A)架橋性エチレン-ビニルアセテートコポリマー(架橋性ホストコポリマー)と、
20~48重量%の(B)カーボンブラックと、
0.1~2.5重量%の(C)アミドワックスと、
0.1~2.5重量%の(D)シリコーンオイルを含み、
(C)重量%+(D)重量%の合計が1.5~5.0重量%であり、
ビス(4-(1-メチル-1-フェニルエチル)フェニル)アミンを含む0.1~1.5重量%の(E)酸化防止剤と、
0.1~1.5重量%の(F)有機過酸化物を含み、
全ての重量%が、前記過酸化物硬化性半導体組成物の総重量に基づき、前記過酸化物硬化性半導体組成物の総重量が、100.0重量%であり、
前記組成物は以下それぞれの材料;
ニトリルブタジエンゴム(NBR)、エチレンプロピレン系ゴム、フェノール、キノン、チアゾール、チウラムスルフィド、および炭化水素ワックス
を含まない、
過酸化物硬化性半導体組成物。 - 前記(A)架橋性エチレン-ビニルアセテートコポリマーが、26~35重量%のビニルアセテートモノマー単位含有量、および/またはASTM D1238-04に従って測定された10分当たり1~80グラム(g/10分)のメルトインデックス(190℃、2.16キログラム(kg))(「I2」)を有する、エチレンビニルアセテートコポリマーである、請求項1に記載の過酸化物硬化性半導体組成物。
- 前記(C)アミドワックスが、ステアラミド、オレアミド、エルカミド、エチレンビス(ステアラミド)、エチレンビス(オレアミド)、エチレンビス(エルカミド)、ベヘナミド、オレイルパルミタミド、およびそれらの任意の2つ以上の組み合わせであり、ならびに/あるいは前記(D)シリコーンオイルが、(i)ポリジオルガノシロキサン流体であって、各オルガノ基が独立してメチル、エチル、ビニル、もしくはフェニルである、ポリジオルガノシロキサン流体、または(ii)ポリ(メチル、フェニル)シロキサン流体、ポリ(メチル、メチル)(メチル、フェニル)シロキサン流体、もしくはポリジメチルシロキサン流体、または、(iii)式[(CH3)3SiO1/2]のM単位および式[(CH3)2SiO2/2]のD単位を含有するポリジメチルシロキサン(PDMS)流体であって、存在する場合に式[SiO4/2]のQ単位と存在する場合に式[CH3SiO3/2]のT単位との合計が、前記PDMS流体の総重量に基づいて0~5重量%である、ポリジメチルシロキサン(PDMS)流体である、請求項1または2に記載の過酸化物硬化性半導体組成物。
- 前記(F)有機過酸化物が、式RO-O-O-ROを有し、式中、各ROが独立して(C1-C20)アルキル基または(C6-C20)アリール基である、請求項1~3のいずれか一項に記載の過酸化物硬化性半導体組成物。
- 添加剤(i)200~1,000百万分の一(ppm)の
(G)ポリジメチルシロキサン(PDMS)流体((D)と異なる)、
(ii)(H)ヒンダードアミン安定剤、または
(iii)(I)難燃剤、または
(iv)(J)水トリー遅延剤もしくは電気トリー遅延剤、または
(v)(K)着色剤、または
(vi)(L)液体芳香族もしくは飽和炭化水素、または
(vii)(M)メチルラジカル捕捉剤、または
(viii)(i)~(vii)のうちの任意の2つ以上の組み合わせをさらに含み、
前記添加剤(G)~(M)の合計重量が、前記過酸化物硬化性半導体組成物の総重量の>0~19.8重量%である、請求項1~4のいずれか一項に記載の過酸化物硬化性半導体組成物。 - 請求項1~5のいずれか一項に記載の過酸化物硬化性半導体組成物を作製する方法であって、有効量の構成成分(A)~(F)を接触させて、前記過酸化物硬化性半導体組成物を得ることを含む、方法。
- 請求項1~5のいずれか一項に記載の過酸化物硬化性半導体組成物を硬化させた反応生成物である、過酸化物硬化半導体生成物。
- 請求項7に記載の過酸化物硬化半導体生成物の成形体を含む、製品。
- 伝導性コアと、前記伝導性コアを少なくとも部分的に覆う絶縁層と、を備える、被覆導体であって、前記絶縁層の少なくとも一部分が、請求項1~5のいずれか一項に記載の過酸化物硬化性半導体組成物または請求項7に記載の過酸化物硬化半導体生成物を含む、被覆導体。
- 電気を伝導する方法であって、請求項9に記載の前記被覆導体の前記伝導性コア全体に電圧を印加して、前記伝導性コアを通る電気の流れを発生させることを含む、方法。
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