JP7166317B2 - 耐高温の変性ポリプロピレンフィルム、その製造方法及び使用 - Google Patents
耐高温の変性ポリプロピレンフィルム、その製造方法及び使用 Download PDFInfo
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- JP7166317B2 JP7166317B2 JP2020170584A JP2020170584A JP7166317B2 JP 7166317 B2 JP7166317 B2 JP 7166317B2 JP 2020170584 A JP2020170584 A JP 2020170584A JP 2020170584 A JP2020170584 A JP 2020170584A JP 7166317 B2 JP7166317 B2 JP 7166317B2
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- Prior art keywords
- polypropylene film
- modified polypropylene
- oxide
- nitride
- ald
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- 239000004743 Polypropylene Substances 0.000 title claims description 150
- 229920001155 polypropylene Polymers 0.000 title claims description 150
- -1 polypropylene Polymers 0.000 title claims description 141
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 150000004767 nitrides Chemical class 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229920001169 thermoplastic Polymers 0.000 claims description 4
- 239000004416 thermosoftening plastic Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 239000000395 magnesium oxide Substances 0.000 claims 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 142
- 238000000231 atomic layer deposition Methods 0.000 description 55
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 44
- 238000000151 deposition Methods 0.000 description 38
- 230000008021 deposition Effects 0.000 description 34
- 229910052786 argon Inorganic materials 0.000 description 22
- 239000007789 gas Substances 0.000 description 22
- 238000010926 purge Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 230000001419 dependent effect Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229920006378 biaxially oriented polypropylene Polymers 0.000 description 5
- 239000011127 biaxially oriented polypropylene Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C08J7/04—Coating
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- C08J7/06—Coating with compositions not containing macromolecular substances
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description
好ましくは、前記電子製品はコンデンサである。
(1)本発明に係る変性ポリプロピレンフィルムは、耐高温(例えば、150℃以上の高温)性能を有し、高温では依然として歪み量が極めて小さく、良好な機械的特性を有し、しかも高温では高破壊電圧(例えば、140℃では変性ポリプロピレンフィルムが耐え得る電圧は580kV/mm)に耐え得る。
(2)本発明により製造される変性ポリプロピレンフィルムは、温度に対する要件の高い電子製品分野、例えばコンデンサ分野において広く使用することができる。
耐高温の変性ポリプロピレンフィルムは、国産ポリプロピレンフィルムCPPと国産ポリプロピレンフィルムCPPの表面におけるAl2O3層を含み、Al2O3層の厚さは20~200nmである。
ポリプロピレンフィルムをALDの反応チャンバ内に置き、250mTorrまで真空吸引してから90℃まで昇温し、アルゴンガスを通し、アルゴンガスの流速は10sccmであり、トリメチルアルミニウム(TMA)と水(H2O)の前駆体を交互に反応チャンバ内に通して反応を行った。1サイクルごとのALDプロセスは、TMAパルス化、アルゴンガスによるパージ、H2Oパルス化、アルゴンガスによるパージを含み、時間はそれぞれ21ミリ秒、6秒、21ミリ秒、6秒であり、これによって変性ポリプロピレンフィルムが得られた。
実施例2は実施例1に対し、国産ポリプロピレンフィルムCPPを輸入ポリプロピレンフィルムHCPPで代替することで異なり、他の製造方法は実施例1と同じである。
耐高温の変性ポリプロピレンフィルムは、国産ポリプロピレンフィルムCPPと国産ポリプロピレンフィルムCPPの表面におけるTiO2層を含み、TiO2層の厚さは20~200nmである。
ポリプロピレンフィルムをALDの反応チャンバ内に置き、250mTorrまで真空吸引してから100℃まで昇温し、アルゴンガスを通し、アルゴンガスの流速は10sccmであり、チタンイソプロポキシド(TIP)と水(H2O)の前駆体を交互に反応チャンバ内に通して反応を行った。1サイクルごとのALDプロセスは、TIPパルス化、アルゴンガスによるパージ、H2Oパルス化、アルゴンガスによるパージを含み、時間はそれぞれ200ミリ秒、6秒、200ミリ秒、6秒であり、ALD堆積を800サイクル行って、変性ポリプロピレンフィルムを製造した。
耐高温の変性ポリプロピレンフィルムは、国産ポリプロピレンフィルムCPPと国産ポリプロピレンフィルムCPPの表面におけるZnO層を含み、ZnO層の厚さは20~200nmである。
ポリプロピレンフィルムをALDの反応チャンバ内に置き、250mTorrまで真空吸引してから90℃まで昇温し、アルゴンガスを通し、アルゴンガスの流速は10sccmであり、ジエチル亜鉛(DEZ)と水(H2O)の前駆体を交互に反応チャンバ内に通して反応を行った。1サイクルごとのALDプロセスは、DEZパルス化、アルゴンガスによるパージ、H2Oパルス化、アルゴンガスによるパージを含み、時間はそれぞれ200ミリ秒、6秒、200ミリ秒、6秒であり、ALD堆積を800サイクル行って、変性ポリプロピレンフィルムを製造した。
耐高温の変性ポリプロピレンフィルムは、国産ポリプロピレンフィルムCPPと国産ポリプロピレンフィルムCPPの表面におけるAlN層を含み、AlN層の厚さは20~200nmである。
ポリプロピレンフィルムをALDの反応チャンバ内に置き、250mTorrまで真空吸引してから100℃まで昇温し、アルゴンガスを通し、アルゴンガスの流速は10sccmであり、トリメチルアルミニウム(TMA)、トリエチルアミンと水(H2O)の前駆体を交互に反応チャンバ内に通して反応を行った。1サイクルごとのALDプロセスは、TMAパルス化、アルゴンガスによるパージ、H2Oパルス化、アルゴンガスによるパージを含み、時間はそれぞれ200ミリ秒、6秒、200ミリ秒、6秒であり、ALD堆積を800サイクル行って、変性ポリプロピレンフィルムを製造した。
1 実施例1で製造された変性ポリプロピレンフィルムの性能テスト
1.1 サイズの温度による変化テスト
実施例1で製造されたALD堆積サイクル数が200、400、2000の変性ポリプロピレンフィルム(初期長さが16mm)と未変性のCPP(初期長さが16mm)を取り、その延伸方向に沿ったサイズの温度による変化を測定した結果を図1に示す。図1は実施例1で製造された変性ポリプロピレンフィルムのサイズが温度によって変化する図であり、図1のa)はテスト過程において、テスト対象のサンプルが125℃で半時間保温することを示し、図1のb)はテスト過程において、テスト対象のサンプルが150℃で半時間保温することを示し、図1中のCPP曲線は未変性のポリプロピレンフィルムのサイズ変化と温度の関係を示し、CPP+ALD堆積200サイクル、CPP+ALD堆積400サイクル、CPP+ALD堆積2000サイクルは実施例1で製造された変性ポリプロピレンフィルムのサイズ変化と温度の関係を示す。CPPで示す曲線から、未変性のCPPは100℃ですでに収縮が発生しており、150℃では収縮率が3%に達していることが分かる。変性ポリプロピレンフィルムは150℃での収縮率が3%よりはるかに小さい。
実施例1で製造されたALD堆積サイクルが2000の変性ポリプロピレンフィルムと未変性のCPPを取り、その貯蔵弾性率と損失弾性率が温度による変化を測定した結果を図2に示す。図2は実施例1で製造された変性ポリプロピレンフィルムの貯蔵弾性率が温度によって変化する図である。図2のa)は、未変性のCPPの貯蔵弾性率と損失弾性率が温度によって変化する関係を示し、図2のb)は実施例1で製造されたALDが2000サイクルの変性ポリプロピレンフィルムの貯蔵弾性率と損失弾性率が温度によって変化する関係を示す。図2から分かるように、未変性のCPPは温度の上昇に伴い、その貯蔵弾性率は急速に低下し、実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムはその貯蔵弾性率が150℃の高温でも依然として200MPaである。
実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムと未変性のCPPを取り、そのXRDパターン(X-線回折パターン)が温度によって変化する様子を測定した結果を図3に示す。図3は実施例1で製造された変性ポリプロピレンフィルムのXRDパターンが温度によって変化する図であり、図3のa)は未変性のCPPのXRDパターンが温度によって変化する図であり、図3のb)は実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムが温度によって変化する図を示す。図3から、未変性のCPPは高温で結晶配向を失っていることが分かる。実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムは高温で結晶配向を実質的に失うことがない。
実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムと未変性のCPPを取り、その直流電圧での破壊強度が温度によって変化する様子を測定した結果を図4に示す。図4において、CPPは未変性CPPの直流電圧(DC)での破壊強度が温度によって変化することを示し、CPP+ALD堆積2000サイクルは実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムの直流電圧(DC)での破壊強度が温度によって変化することを示す。図4から分かるように、未変性のCPPは高温での直流電圧(DC)での破壊強度が明らかに低下し、実施例1で製造されたALD堆積が2000サイクルの変性ポリプロピレンフィルムは高温(140℃)での直流電圧(DC)での破壊強度の低下が明らかではない。
実施例2で製造されたALD堆積が400サイクル、800サイクル、2000サイクルの変性ポリプロピレンフィルムと未変性のHCPP(すなわち、ALD堆積が0サイクル)を取り、その延伸方向の収縮率の温度による変化を測定した結果を図5に示す。図5は実施例2で製造された変性ポリプロピレンフィルムの収縮率が温度によって変化する図である(125℃、半時間とは、テスト対象のサンプルが125℃で半時間保温することを意味し、150℃、半時間とは、テスト対象のサンプルが150℃で半時間保温することを意味する)。図5から分かるように、未変性のHCPPは125℃で収縮率がすでに3%以上に達したが、実施例2で製造された変性ポリプロピレンフィルムは125℃で半時間保温した後に収縮率が3%以下になった。
実施例3で製造されたALD堆積が800サイクルの変性ポリプロピレンフィルム及び未変性のCPPを取り、その延伸方向に沿ったサイズの温度による変化を測定した結果を図6に示す。図6は、実施例3で製造された変性ポリプロピレンフィルムのサイズが温度によって変化する図である。図6におけるCPP 125℃とは、125℃で半時間保温した未変性のCPPの延伸方向に沿ったサイズの温度による変化様子を示し、CPP 150℃とは、150℃で半時間保温した未変性のCPPの延伸方向のサイズの温度による変化を示し、CPP 125℃ ALD堆積800サイクルとは125℃で半時間保温した、実施例3で製造されたALD堆積が800サイクルの変性ポリプロピレンフィルムの延伸方向のサイズの温度による変化を示し、CPP 150℃ ALD堆積800サイクルとは150℃で半時間保温した、実施例3で製造されたALD堆積が800サイクルの変性ポリプロピレンフィルムの延伸方向に沿ったサイズの温度による変化を示す。図6から分かるように、実施例3で製造されたALD堆積が800サイクルの変性ポリプロピレンフィルムのサイズ変化は、未変性のCPPのサイズ変化よりも小さく、実施例3で製造されたALD堆積が800サイクルの変性ポリプロピレンフィルムの収縮率は、2%未満である。
実施例1、実施例3、実施例4及び実施例5における800サイクルのALD堆積で製造された変性ポリプロピレンフィルムと未変性のCPPを取り、150℃で半時間保温した後に、その延伸方向に沿った収縮率を測定した結果を図7に示す。図7は実施例1、実施例3、実施例4及び実施例5における800サイクルのALD堆積で得られた変性ポリプロピレンフィルムを150℃で半時間保温した後の収縮率を示す図である。図7中のCPPは、未変性のCPPを示し、CPP+TiO2は実施例3で製造された変性ポリプロピレンフィルムを示し、CPP+Al2O3は実施例1で製造された変性ポリプロピレンフィルムを示し、CPP+ZnOは実施例4で製造された変性ポリプロピレンフィルムを示し、CPP+AlNは実施例5で製造された変性ポリプロピレンフィルムを示す。図7から分かるように、実施例1、実施例3、実施例4及び実施例5における800サイクルのALD堆積で製造された変性ポリプロピレンフィルムの収縮率は明らかに未変性のCPPの収縮率より低い。
Claims (10)
- ポリプロピレンフィルムと、ポリプロピレンフィルムの表面における酸化物層及び/又は窒化物層とを含み、前記酸化物層又は窒化物層の厚さは20~500nmであり、
140℃で580kV/mmの耐電圧を有することを特徴とする変性ポリプロピレンフィルム。 - 前記酸化物層は、アルミニウムの酸化物、チタンの酸化物、亜鉛の酸化物、ケイ素の酸化物、ジルコニウムの酸化物、タンタラムの酸化物、ニオブの酸化物、マグネシウムの酸化物、カルシウムの酸化物、鉄の酸化物、チタン酸タングステン又はチタン酸バリウムのうちの少なくとも1種からなることを特徴とする請求項1に記載の変性ポリプロピレンフィルム。
- 前記酸化物層は、Al2O3、TiO2-x、TiO2、Ti2O3、ZnO、SiO2、ZrO2、Ta2O5、Nb2O5、MgO、Fe2O3、SrTiO3又はBaTiO3のうちの少なくとも1種からなり、0<x<1であることを特徴とする請求項2に記載の変性ポリプロピレンフィルム。
- 前記窒化物層は、アルミニウムの窒化物、チタンの窒化物、ホウ素の窒化物、ケイ素の窒化物又はタンタラムの窒化物のうちの少なくとも1種からなることを特徴とする請求項1に記載の変性ポリプロピレンフィルム。
- 請求項1~4のいずれか1項に記載の変性ポリプロピレンフィルムの製造方法であって、ALD技術を用いてポリプロピレンフィルムの表面に酸化物層又は窒化物層を堆積させ、前記変性ポリプロピレンフィルムを製造するステップを含むことを特徴とする変性ポリプロピレンフィルムの製造方法。
- 前記ALD技術を用いてポリプロピレンフィルムの表面に酸化物層又は窒化物層を堆積させ、前記変性ポリプロピレンフィルムを製造する具体的な過程は、ポリプロピレンフィルムをALDの反応チャンバの中に置いて、真空吸引をしてから昇温し、キャリヤガスを通し、少なくとも2種の前駆体を交互に反応チャンバ内に通して反応させることで前記変性ポリプロピレンフィルムを得ることであり、前記前駆体は、金属元素又はSiを提供する前駆体と、酸素又は窒素元素を提供する前駆体とを含むことを特徴とする請求項5に記載の製造方法。
- 前記金属元素は、Al、Ti、Zn、Zr、Ta、Nb、Mg、Fe、Sr又はBaのうちの少なくとも1種から選ばれ、前記真空吸引の真空度は250mTorr以下であり、前記前駆体の反応の温度は100℃を超えないことを特徴とする請求項6に記載の製造方法。
- 請求項6に記載の製造方法の変性熱可塑性フィルムの製造における使用。
- 請求項1~4のいずれか1項に記載の変性ポリプロピレンフィルムを含む電子製品。
- 前記電子製品は、コンデンサであることを特徴とする請求項9に記載の電子製品。
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JP2019520277A (ja) | 2016-07-12 | 2019-07-18 | アール・ジェイ・レイノルズ・タバコ・プロダクツ | 原子層堆積による防湿層を有するplaフィルムを含むパッケージ包装材 |
JP2018157055A (ja) | 2017-03-17 | 2018-10-04 | 東レKpフィルム株式会社 | コンデンサ用金属化フィルム、およびそれを用いたコンデンサ |
WO2021186674A1 (ja) | 2020-03-19 | 2021-09-23 | 日新電機株式会社 | フィルムコンデンサ用フィルム、フィルムコンデンサ用金属化フィルム、及びフィルムコンデンサ |
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US20220064396A1 (en) | 2022-03-03 |
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