JP7166147B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7166147B2
JP7166147B2 JP2018213927A JP2018213927A JP7166147B2 JP 7166147 B2 JP7166147 B2 JP 7166147B2 JP 2018213927 A JP2018213927 A JP 2018213927A JP 2018213927 A JP2018213927 A JP 2018213927A JP 7166147 B2 JP7166147 B2 JP 7166147B2
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JP
Japan
Prior art keywords
plasma processing
processing apparatus
mounting table
exhaust
exhaust port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018213927A
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English (en)
Japanese (ja)
Other versions
JP2020080395A (ja
Inventor
亮 佐藤
イサク 山科
稔大 笠原
浩貴 塚本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2018213927A priority Critical patent/JP7166147B2/ja
Priority to TW108139432A priority patent/TWI812801B/zh
Priority to CN201911096333.8A priority patent/CN111192838B/zh
Priority to KR1020190144823A priority patent/KR102214790B1/ko
Publication of JP2020080395A publication Critical patent/JP2020080395A/ja
Application granted granted Critical
Publication of JP7166147B2 publication Critical patent/JP7166147B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2018213927A 2018-11-14 2018-11-14 プラズマ処理装置 Active JP7166147B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018213927A JP7166147B2 (ja) 2018-11-14 2018-11-14 プラズマ処理装置
TW108139432A TWI812801B (zh) 2018-11-14 2019-10-31 電漿處理裝置
CN201911096333.8A CN111192838B (zh) 2018-11-14 2019-11-11 等离子体处理装置
KR1020190144823A KR102214790B1 (ko) 2018-11-14 2019-11-13 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018213927A JP7166147B2 (ja) 2018-11-14 2018-11-14 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2020080395A JP2020080395A (ja) 2020-05-28
JP7166147B2 true JP7166147B2 (ja) 2022-11-07

Family

ID=70709126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018213927A Active JP7166147B2 (ja) 2018-11-14 2018-11-14 プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP7166147B2 (ko)
KR (1) KR102214790B1 (ko)
CN (1) CN111192838B (ko)
TW (1) TWI812801B (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187062A (ja) 2007-01-31 2008-08-14 Hitachi High-Technologies Corp プラズマ処理装置
JP2010238980A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2017017180A (ja) 2015-07-01 2017-01-19 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造
JP2018517276A (ja) 2015-04-20 2018-06-28 ユ−ジーン テクノロジー カンパニー．リミテッド 基板処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403039B2 (ja) * 1997-10-31 2003-05-06 キヤノン株式会社 プラズマｃｖｄ法による薄膜半導体の作製装置及び作製方法
US6576202B1 (en) * 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
JP2001355073A (ja) * 2001-04-27 2001-12-25 Canon Inc 堆積膜形成装置
KR101000338B1 (ko) * 2006-04-07 2010-12-13 엘아이지에이디피 주식회사 플라즈마 처리장치
JP5086192B2 (ja) * 2008-07-01 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
KR101046335B1 (ko) * 2008-07-29 2011-07-05 피에스케이 주식회사 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법
JP5951324B2 (ja) * 2012-04-05 2016-07-13 東京エレクトロン株式会社 プラズマ処理装置
JP6305825B2 (ja) * 2014-05-12 2018-04-04 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187062A (ja) 2007-01-31 2008-08-14 Hitachi High-Technologies Corp プラズマ処理装置
JP2010238980A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2018517276A (ja) 2015-04-20 2018-06-28 ユ−ジーン テクノロジー カンパニー．リミテッド 基板処理装置
JP2017017180A (ja) 2015-07-01 2017-01-19 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造

Also Published As

Publication number Publication date
KR102214790B1 (ko) 2021-02-09
TW202025288A (zh) 2020-07-01
KR20200056326A (ko) 2020-05-22
JP2020080395A (ja) 2020-05-28
CN111192838B (zh) 2023-08-04
CN111192838A (zh) 2020-05-22
TWI812801B (zh) 2023-08-21

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