JP7145928B2 - 基板処理装置のガス噴射装置、基板処理装置、および基板処理方法 - Google Patents

基板処理装置のガス噴射装置、基板処理装置、および基板処理方法 Download PDF

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JP7145928B2
JP7145928B2 JP2020503937A JP2020503937A JP7145928B2 JP 7145928 B2 JP7145928 B2 JP 7145928B2 JP 2020503937 A JP2020503937 A JP 2020503937A JP 2020503937 A JP2020503937 A JP 2020503937A JP 7145928 B2 JP7145928 B2 JP 7145928B2
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gas
gas injection
space
substrate
purge
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JP2020528498A5 (https=
JP2020528498A (ja
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ミン ホ チョン
ジョン シク キム
チュル ジュ ファン
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ジュスン エンジニアリング カンパニー リミテッド
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Priority claimed from PCT/KR2018/008098 external-priority patent/WO2019022430A1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020503937A 2017-07-28 2018-07-18 基板処理装置のガス噴射装置、基板処理装置、および基板処理方法 Active JP7145928B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
KR10-2017-0096375 2017-07-28
KR20170096375 2017-07-28
KR20170102535 2017-08-11
KR10-2017-0102535 2017-08-11
KR10-2018-0082066 2018-07-16
KR1020180082066A KR102155281B1 (ko) 2017-07-28 2018-07-16 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법
PCT/KR2018/008098 WO2019022430A1 (ko) 2017-07-28 2018-07-18 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법

Publications (3)

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JP2020528498A JP2020528498A (ja) 2020-09-24
JP2020528498A5 JP2020528498A5 (https=) 2021-08-12
JP7145928B2 true JP7145928B2 (ja) 2022-10-03

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US (1) US11651941B2 (https=)
JP (1) JP7145928B2 (https=)
KR (1) KR102155281B1 (https=)
CN (1) CN110914970B (https=)
TW (1) TWI769284B (https=)

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* Cited by examiner, † Cited by third party
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KR102760892B1 (ko) * 2021-01-29 2025-02-03 주성엔지니어링(주) 기판처리장치
JP7758447B2 (ja) * 2022-02-10 2025-10-22 東京エレクトロン株式会社 成膜装置

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JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
JP2010087238A (ja) 2008-09-30 2010-04-15 Tokyo Electron Ltd 成膜装置
US20150225848A1 (en) 2012-08-23 2015-08-13 Jusung Engineering Co. Ltd. Substrate treatment apparatus and substrate treatment method
US20160322214A1 (en) 2015-05-02 2016-11-03 Applied Materials, Inc. Methods For Depositing Low K And Low Wet Etch Rate Dielectric Thin Films
JP2016213289A (ja) 2015-05-01 2016-12-15 東京エレクトロン株式会社 成膜方法および成膜装置

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KR101665581B1 (ko) 2010-06-22 2016-10-12 주식회사 원익아이피에스 박막증착방법
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KR101741688B1 (ko) * 2011-12-26 2017-06-16 주식회사 원익아이피에스 박막 제조방법 및 그 제조장치
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KR20030002776A (ko) 2001-06-29 2003-01-09 주식회사 하이닉스반도체 박막 증착 장비
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
JP2010087238A (ja) 2008-09-30 2010-04-15 Tokyo Electron Ltd 成膜装置
US20150225848A1 (en) 2012-08-23 2015-08-13 Jusung Engineering Co. Ltd. Substrate treatment apparatus and substrate treatment method
JP2016213289A (ja) 2015-05-01 2016-12-15 東京エレクトロン株式会社 成膜方法および成膜装置
US20160322214A1 (en) 2015-05-02 2016-11-03 Applied Materials, Inc. Methods For Depositing Low K And Low Wet Etch Rate Dielectric Thin Films
JP2018515921A (ja) 2015-05-02 2018-06-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低誘電率かつ低湿式エッチング速度の誘電体薄膜を堆積させるための方法

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Publication number Publication date
US11651941B2 (en) 2023-05-16
KR20190013497A (ko) 2019-02-11
KR102155281B1 (ko) 2020-09-11
US20200219700A1 (en) 2020-07-09
CN110914970A (zh) 2020-03-24
TW201911381A (zh) 2019-03-16
TWI769284B (zh) 2022-07-01
JP2020528498A (ja) 2020-09-24
CN110914970B (zh) 2023-10-10

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