JP2010087238A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP2010087238A JP2010087238A JP2008254554A JP2008254554A JP2010087238A JP 2010087238 A JP2010087238 A JP 2010087238A JP 2008254554 A JP2008254554 A JP 2008254554A JP 2008254554 A JP2008254554 A JP 2008254554A JP 2010087238 A JP2010087238 A JP 2010087238A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing space
- film forming
- forming apparatus
- vacuum vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims abstract description 149
- 238000012545 processing Methods 0.000 claims abstract description 141
- 239000012495 reaction gas Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 258
- 238000012546 transfer Methods 0.000 claims description 58
- 238000010926 purge Methods 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 230000003028 elevating effect Effects 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 82
- 238000000034 method Methods 0.000 description 48
- 230000008569 process Effects 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 27
- 239000002994 raw material Substances 0.000 description 26
- 230000007246 mechanism Effects 0.000 description 19
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 18
- 229910001882 dioxygen Inorganic materials 0.000 description 18
- 239000007788 liquid Substances 0.000 description 18
- 238000012423 maintenance Methods 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000011144 upstream manufacturing Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000011344 liquid material Substances 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002052 molecular layer Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- -1 CH 3 OH Chemical class 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004356 Ti Raw Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- JTQPTNQXCUMDRK-UHFFFAOYSA-N propan-2-olate;titanium(2+) Chemical compound CC(C)O[Ti]OC(C)C JTQPTNQXCUMDRK-UHFFFAOYSA-N 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
- B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】真空容器1内にて基板Wの表面に第1、第2の反応ガスとを交互に供給することにより当該基板Wの表面に薄膜を成膜する成膜装置において、基板Wの載置領域を含む複数の下部材2は、各々上部材22と対向して載置領域との間に処理空間20を形成し、処理空間20は、当該処理空間20の周方向に沿って形成され当該処理空間内と真空容器1内とを連通するための排気用開口部61、及び真空容器1内の雰囲気を介して真空排気手段64により真空排気される。
【選択図】図1
Description
この真空容器内に設けられ、各々基板の載置領域を含む複数の下部材と
これら下部材に夫々対向して設けられ、前記載置領域との間に処理空間を形成する上部材と、
前記処理空間に第1の反応ガス及び第2の反応ガスを夫々供給するための第1の反応ガス供給部及び第2の反応ガス供給部と、
前記第1の反応ガスを供給するタイミングと第2の反応ガスを供給するタイミングとの間にパージガスを前記処理空間に供給するためのパージガス供給部と、
前記処理空間の周方向に沿って形成され、当該処理空間内と処理空間の外部である前記真空容器内の雰囲気とを連通するための排気用開口部と、
前記処理空間を前記排気用開口部及び真空容器内の雰囲気を介して真空排気するための真空排気手段と、を備えたことを特徴とする。
本実施の形態に係る成膜装置は、金属元素、例えば周期表の第3周期の元素であるAl、Siなど、周期表の第4周期の元素であるTi、Cr、Mn、Fe、Co、Ni、Cu、Zn、Geなど、周期表の第5周期の元素であるZr、Mo、Ru、Rh、Pd、Agなど、周期表の第6周期の元素であるBa、Hf、Ta、W、Re、lr、Ptなどの元素を含む薄膜を成膜することが可能であり、ウエハW表面に吸着させる金属原料としてはこれらの金属元素の有機金属化合物や無機金属化合物などを反応ガス(以下、原料ガスという)として用いる場合が挙げられる。金属原料の具体例としては、上述のBTBASの他に、例えばDCS[ジクロロシラン]、HCD[ヘキサジクロロシラン]、TMA[トリメチルアルミニウム]、3DMAS[トリスジメチルアミノシラン]などを挙げることができる。
また本例では、以上に説明した各構成要素のうち、原料ガス供給源71、ポンプ711、原料ガス供給配管713、インジェクタ4、マニホールド部3及びガス供給管34は、第1の反応ガス供給部に相当し、酸素ガス供給源72、圧力調整弁721、開閉弁722、酸素ガス供給配管723、マニホールド部3及びガス供給管34は、第2の反応ガス供給部に相当し、またパージガス供給源73、圧力調整弁731、開閉弁732、パージガス供給配管733、マニホールド部3及びガス供給管34はパージガス供給部に相当している。
また、各ガスが供給される処理空間20は、天板部材22と載置台2とから構成され、それらの間に形成される隙間を介して排気される。従って複数枚の基板を載置可能な大型の回転テーブルを用意して、当該回転テーブルの上面側に処理空間を設ける場合と比較して、処理空間20の容積を小さくすることができるので、基板同士の隙間など、成膜には関与しない領域に反応ガスを供給する必要がないことから、成膜処理に必要な反応ガスの供給量を削減することが可能となる。また、共通の各ガス供給源から共通のガス供給路32及びガス拡散室33を介して各ガスが処理空間20に供給されるので、各処理空間20に供給されるガス流量及びガス濃度にばらつきが生じることが抑えられる。従って、各処理空間20で処理されるウエハWの膜質や膜厚のばらつきが抑えられる。
図23(a)は底板14の下側、図23(b)は保持部91の上側を夫々示している。図23(b)に示すように保持部91は開口部92を備え、前記スリーブ25及び駆動部51を囲むように筒状に形成されている。そして保持部91の上端には当該保持部91の周方向に沿って環状の突起93が形成されており、前記底板14の下方側には当該底板14中央部から下方に突出したスリーブ25及び駆動部51を囲むように前記突起93の形状に対応した溝94が形成されている。突起93と溝94とは互いに嵌合し、底板14に対して保持部91は位置決めされている。
1 真空容器
10 排気空間
14 底板
100 制御部
2 載置台
20 処理空間
21 ステージヒータ
22 天板部材
23 支持腕
24 支柱
3 マニホールド部
4 インジェクタ
64 真空ポンプ
7 ガス供給制御部
71 原料ガス供給源
72 酸素ガス供給源
73 パージガス供給源
721、731
圧力調整弁
712、722、732
開閉弁
Claims (8)
- 真空容器内にて、第1の反応ガスと第2の反応ガスとを交互に供給し排気するサイクルを複数回実行することにより、これらの反応ガスを反応させて基板の表面に薄膜を成膜する成膜装置において、
この真空容器内に設けられ、各々基板の載置領域を含む複数の下部材と
これら下部材に夫々対向して設けられ、前記載置領域との間に処理空間を形成する上部材と、
前記処理空間に第1の反応ガス及び第2の反応ガスを夫々供給するための第1の反応ガス供給部及び第2の反応ガス供給部と、
前記第1の反応ガスを供給するタイミングと第2の反応ガスを供給するタイミングとの間にパージガスを前記処理空間に供給するためのパージガス供給部と、
前記処理空間の周方向に沿って形成され、当該処理空間内と処理空間の外部である前記真空容器内の雰囲気とを連通するための排気用開口部と、
前記処理空間を前記排気用開口部及び真空容器内の雰囲気を介して真空排気するための真空排気手段と、を備えたことを特徴とする成膜装置。 - 前記上部材の内周面は、上部から下方に向けて末広がりの形状に形成されていることを特徴とする請求項1に記載の成膜装置。
- 前記排気用開口部は、前記上部材の下縁と下部材との間に周方向に形成された隙間であることを特徴とする請求項1または2に記載の成膜装置。
- 前記上部材の中央部には、第1の反応ガス、第2の反応ガス及びパージガスを供給するためのガス供給口が形成されていることを特徴とする請求項1ないし3のいずれか一つに記載の成膜装置。
- 前記上部材及び下部材の複数の組は、真空容器の周方向に沿って配置されていることを特徴とする請求項1ないし4のいずれか一つに記載の成膜装置。
- 真空容器の周方向に配置された前記上部材及び下部材の複数の組を当該周方向に回転させて、前記真空容器の側壁面に設けられた受け渡し口を介して、当該真空容器の外部の基板搬送手段と載置領域との間で基板の受け渡しをするための共通の回転手段を備えたことを特徴とする請求項5に記載の成膜装置。
- 前記真空容器の外部の基板搬送手段と載置領域との間で基板の受け渡しをするための隙間を形成するために下部材を上部材に対して相対的に昇降させるための昇降手段を備えたことを特徴とする請求項1ないし6のいずれか一つに記載の成膜装置。
- 前記昇降手段は、複数の下部材に対して共通化されていることを特徴とする請求項7に記載の成膜装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008254554A JP5544697B2 (ja) | 2008-09-30 | 2008-09-30 | 成膜装置 |
CN2012104572388A CN103334091A (zh) | 2008-09-30 | 2009-09-29 | 真空处理装置 |
KR1020107023541A KR101248654B1 (ko) | 2008-09-30 | 2009-09-29 | 성막 장치 |
PCT/JP2009/066937 WO2010038734A1 (ja) | 2008-09-30 | 2009-09-29 | 成膜装置 |
CN2012104574078A CN103173741A (zh) | 2008-09-30 | 2009-09-29 | 成膜装置 |
CN2009801138872A CN102017096B (zh) | 2008-09-30 | 2009-09-29 | 成膜装置 |
KR1020127020098A KR101271800B1 (ko) | 2008-09-30 | 2009-09-29 | 성막 장치 |
US13/074,261 US20110226178A1 (en) | 2008-09-30 | 2011-03-29 | Film deposition system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008254554A JP5544697B2 (ja) | 2008-09-30 | 2008-09-30 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010087238A true JP2010087238A (ja) | 2010-04-15 |
JP5544697B2 JP5544697B2 (ja) | 2014-07-09 |
Family
ID=42073495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008254554A Active JP5544697B2 (ja) | 2008-09-30 | 2008-09-30 | 成膜装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110226178A1 (ja) |
JP (1) | JP5544697B2 (ja) |
KR (2) | KR101271800B1 (ja) |
CN (3) | CN103173741A (ja) |
WO (1) | WO2010038734A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013149728A (ja) * | 2012-01-18 | 2013-08-01 | Tokyo Electron Ltd | 成膜装置 |
WO2014097520A1 (ja) * | 2012-12-20 | 2014-06-26 | キヤノンアネルバ株式会社 | 酸化処理装置、酸化方法、および電子デバイスの製造方法 |
JP2018101713A (ja) * | 2016-12-21 | 2018-06-28 | 株式会社日本製鋼所 | ガス導入ノズル、処理室およびプラズマ処理方法 |
JP2020528498A (ja) * | 2017-07-28 | 2020-09-24 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置のガス噴射装置、基板処理装置、および基板処理方法 |
JP2021501465A (ja) * | 2017-10-27 | 2021-01-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 空間分離を伴う単一ウエハの処理環境 |
KR20210068143A (ko) * | 2018-10-29 | 2021-06-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 상보적 패턴 스테이션 설계들 |
WO2022030189A1 (ja) * | 2020-08-05 | 2022-02-10 | 芝浦機械株式会社 | 表面処理装置および表面処理方法 |
JP2022122897A (ja) * | 2018-06-18 | 2022-08-23 | アプライド マテリアルズ インコーポレイテッド | 対にされた動的平行板の容量結合プラズマ |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103820770A (zh) * | 2012-11-19 | 2014-05-28 | 刘祥林 | 具有多个子反应器结构的金属有机化学气相沉积设备 |
JP5954202B2 (ja) * | 2013-01-29 | 2016-07-20 | 東京エレクトロン株式会社 | 成膜装置 |
CN104103549B (zh) * | 2013-04-07 | 2018-05-18 | 盛美半导体设备(上海)有限公司 | 半导体工艺腔室 |
FR3016640A1 (fr) * | 2014-01-23 | 2015-07-24 | Aton Ind | Chambre a vide pourvue d'une cloison inclinee |
JP6225837B2 (ja) * | 2014-06-04 | 2017-11-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
JP6225842B2 (ja) * | 2014-06-16 | 2017-11-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
JP5837962B1 (ja) * | 2014-07-08 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびガス整流部 |
US10113232B2 (en) * | 2014-07-31 | 2018-10-30 | Lam Research Corporation | Azimuthal mixer |
US10407771B2 (en) * | 2014-10-06 | 2019-09-10 | Applied Materials, Inc. | Atomic layer deposition chamber with thermal lid |
WO2016056275A1 (ja) * | 2014-10-10 | 2016-04-14 | キヤノンアネルバ株式会社 | 成膜装置 |
JP6354539B2 (ja) * | 2014-11-25 | 2018-07-11 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、記憶媒体 |
US10403474B2 (en) | 2016-07-11 | 2019-09-03 | Lam Research Corporation | Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system |
CN110137121B (zh) * | 2018-02-09 | 2024-03-26 | 东京毅力科创株式会社 | 基板处理装置 |
CN110499499B (zh) * | 2018-05-18 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 反应腔室和半导体设备 |
JP2020141118A (ja) * | 2019-02-27 | 2020-09-03 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム及び載置台を位置合わせする方法 |
WO2020175191A1 (ja) * | 2019-02-27 | 2020-09-03 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム及び載置台を位置合わせする方法 |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
CN118098919A (zh) * | 2019-06-07 | 2024-05-28 | 朗姆研究公司 | 多站半导体处理中的可独立调整流路传导性 |
JP7300898B2 (ja) * | 2019-06-11 | 2023-06-30 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
WO2021033461A1 (ja) * | 2019-08-20 | 2021-02-25 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
US12080571B2 (en) | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
US11646217B2 (en) * | 2021-04-14 | 2023-05-09 | Applied Materials, Inc. | Transfer apparatus and substrate-supporting member |
US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1060650A (ja) * | 1996-08-13 | 1998-03-03 | Anelva Corp | 化学蒸着装置 |
JPH11106930A (ja) * | 1997-10-06 | 1999-04-20 | Kokusai Electric Co Ltd | プラズマcvd装置 |
JP2001254181A (ja) * | 2000-01-06 | 2001-09-18 | Tokyo Electron Ltd | 成膜装置および成膜方法 |
JP2001313258A (ja) * | 2000-04-28 | 2001-11-09 | Anelva Corp | 真空処理装置 |
JP2006245089A (ja) * | 2005-03-01 | 2006-09-14 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3854443A (en) * | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
US6576062B2 (en) * | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
JP3886424B2 (ja) * | 2001-08-28 | 2007-02-28 | 鹿児島日本電気株式会社 | 基板処理装置及び方法 |
MY148924A (en) * | 2001-09-29 | 2013-06-14 | Cree Inc | Apparatus for inverted multi-wafer mocvd fabrication |
US7780789B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
US6902620B1 (en) * | 2001-12-19 | 2005-06-07 | Novellus Systems, Inc. | Atomic layer deposition systems and methods |
EP1466034A1 (en) * | 2002-01-17 | 2004-10-13 | Sundew Technologies, LLC | Ald apparatus and method |
US20040247787A1 (en) * | 2002-04-19 | 2004-12-09 | Mackie Neil M. | Effluent pressure control for use in a processing system |
US7008484B2 (en) * | 2002-05-06 | 2006-03-07 | Applied Materials Inc. | Method and apparatus for deposition of low dielectric constant materials |
US20070246163A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
US8465591B2 (en) * | 2008-06-27 | 2013-06-18 | Tokyo Electron Limited | Film deposition apparatus |
-
2008
- 2008-09-30 JP JP2008254554A patent/JP5544697B2/ja active Active
-
2009
- 2009-09-29 WO PCT/JP2009/066937 patent/WO2010038734A1/ja active Application Filing
- 2009-09-29 KR KR1020127020098A patent/KR101271800B1/ko active IP Right Grant
- 2009-09-29 CN CN2012104574078A patent/CN103173741A/zh active Pending
- 2009-09-29 CN CN2012104572388A patent/CN103334091A/zh active Pending
- 2009-09-29 CN CN2009801138872A patent/CN102017096B/zh active Active
- 2009-09-29 KR KR1020107023541A patent/KR101248654B1/ko active IP Right Grant
-
2011
- 2011-03-29 US US13/074,261 patent/US20110226178A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1060650A (ja) * | 1996-08-13 | 1998-03-03 | Anelva Corp | 化学蒸着装置 |
JPH11106930A (ja) * | 1997-10-06 | 1999-04-20 | Kokusai Electric Co Ltd | プラズマcvd装置 |
JP2001254181A (ja) * | 2000-01-06 | 2001-09-18 | Tokyo Electron Ltd | 成膜装置および成膜方法 |
JP2001313258A (ja) * | 2000-04-28 | 2001-11-09 | Anelva Corp | 真空処理装置 |
JP2006245089A (ja) * | 2005-03-01 | 2006-09-14 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013149728A (ja) * | 2012-01-18 | 2013-08-01 | Tokyo Electron Ltd | 成膜装置 |
WO2014097520A1 (ja) * | 2012-12-20 | 2014-06-26 | キヤノンアネルバ株式会社 | 酸化処理装置、酸化方法、および電子デバイスの製造方法 |
JP6016946B2 (ja) * | 2012-12-20 | 2016-10-26 | キヤノンアネルバ株式会社 | 酸化処理装置、酸化方法、および電子デバイスの製造方法 |
JPWO2014097520A1 (ja) * | 2012-12-20 | 2017-01-12 | キヤノンアネルバ株式会社 | 酸化処理装置、酸化方法、および電子デバイスの製造方法 |
US9905441B2 (en) | 2012-12-20 | 2018-02-27 | Canon Anelva Corporation | Oxidation process apparatus, oxidation method, and method for manufacturing electronic device |
JP2018101713A (ja) * | 2016-12-21 | 2018-06-28 | 株式会社日本製鋼所 | ガス導入ノズル、処理室およびプラズマ処理方法 |
JP2020528498A (ja) * | 2017-07-28 | 2020-09-24 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置のガス噴射装置、基板処理装置、および基板処理方法 |
JP7145928B2 (ja) | 2017-07-28 | 2022-10-03 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置のガス噴射装置、基板処理装置、および基板処理方法 |
JP2021501465A (ja) * | 2017-10-27 | 2021-01-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 空間分離を伴う単一ウエハの処理環境 |
JP2022122897A (ja) * | 2018-06-18 | 2022-08-23 | アプライド マテリアルズ インコーポレイテッド | 対にされた動的平行板の容量結合プラズマ |
JP7422807B2 (ja) | 2018-06-18 | 2024-01-26 | アプライド マテリアルズ インコーポレイテッド | 対にされた動的平行板の容量結合プラズマ |
KR20210068143A (ko) * | 2018-10-29 | 2021-06-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 상보적 패턴 스테이션 설계들 |
KR102638144B1 (ko) | 2018-10-29 | 2024-02-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 상보적 패턴 스테이션 설계들 |
WO2022030189A1 (ja) * | 2020-08-05 | 2022-02-10 | 芝浦機械株式会社 | 表面処理装置および表面処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5544697B2 (ja) | 2014-07-09 |
CN102017096A (zh) | 2011-04-13 |
KR101248654B1 (ko) | 2013-03-28 |
KR20120101165A (ko) | 2012-09-12 |
WO2010038734A1 (ja) | 2010-04-08 |
CN103173741A (zh) | 2013-06-26 |
CN102017096B (zh) | 2012-12-26 |
CN103334091A (zh) | 2013-10-02 |
KR101271800B1 (ko) | 2013-06-07 |
KR20110031273A (ko) | 2011-03-25 |
US20110226178A1 (en) | 2011-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5544697B2 (ja) | 成膜装置 | |
JP5315898B2 (ja) | 成膜装置 | |
JP5088284B2 (ja) | 真空処理装置 | |
JP6095825B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
US10131984B2 (en) | Substrate processing apparatus | |
JP5722595B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
JP5347294B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JP5284182B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
JP2008258595A (ja) | 基板処理装置 | |
JP2007154297A (ja) | 成膜方法および成膜装置 | |
JP2010199160A (ja) | 基板処理装置 | |
JP2016117933A (ja) | 成膜装置 | |
JP2011238832A (ja) | 基板処理装置 | |
JP5083153B2 (ja) | 真空処理装置 | |
JP5751754B2 (ja) | 成膜方法および記憶媒体 | |
JP2011222677A (ja) | 基板処理装置 | |
JP5095230B2 (ja) | SrTiO3膜の成膜方法およびコンピュータ読取可能な記憶媒体 | |
JP2009123950A (ja) | 基板処理装置 | |
JP6021977B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
CN110277329B (zh) | 衬底处理装置 | |
JP6084070B2 (ja) | 半導体装置の製造方法、プログラムおよび基板処理装置 | |
JP6108530B2 (ja) | 半導体装置の製造方法、プログラムおよび基板処理装置 | |
JP2016122691A (ja) | 基板処理装置、ガス供給ノズル、および、半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110808 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140415 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140428 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5544697 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |