KR102155281B1 - 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법 - Google Patents

기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법 Download PDF

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KR102155281B1
KR102155281B1 KR1020180082066A KR20180082066A KR102155281B1 KR 102155281 B1 KR102155281 B1 KR 102155281B1 KR 1020180082066 A KR1020180082066 A KR 1020180082066A KR 20180082066 A KR20180082066 A KR 20180082066A KR 102155281 B1 KR102155281 B1 KR 102155281B1
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South Korea
Prior art keywords
gas
gas injection
space
injection space
module
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Korean (ko)
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KR20190013497A (ko
Inventor
천민호
김종식
황철주
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주성엔지니어링(주)
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Priority to US16/628,021 priority Critical patent/US11651941B2/en
Priority to PCT/KR2018/008098 priority patent/WO2019022430A1/ko
Priority to CN201880047348.2A priority patent/CN110914970B/zh
Priority to JP2020503937A priority patent/JP7145928B2/ja
Priority to TW107126006A priority patent/TWI769284B/zh
Publication of KR20190013497A publication Critical patent/KR20190013497A/ko
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    • H01L21/67017—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/02046—
    • H01L21/02263—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020180082066A 2017-07-28 2018-07-16 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법 Active KR102155281B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US16/628,021 US11651941B2 (en) 2017-07-28 2018-07-18 Apparatus for distributing gas, and apparatus and method for processing substrate
PCT/KR2018/008098 WO2019022430A1 (ko) 2017-07-28 2018-07-18 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법
CN201880047348.2A CN110914970B (zh) 2017-07-28 2018-07-18 基板处理设备的气体分配设备、基板处理设备及基板处理方法
JP2020503937A JP7145928B2 (ja) 2017-07-28 2018-07-18 基板処理装置のガス噴射装置、基板処理装置、および基板処理方法
TW107126006A TWI769284B (zh) 2017-07-28 2018-07-27 氣體散佈裝置、基板處理設備及基板處理方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020170096375 2017-07-28
KR20170096375 2017-07-28
KR1020170102535 2017-08-11
KR20170102535 2017-08-11

Publications (2)

Publication Number Publication Date
KR20190013497A KR20190013497A (ko) 2019-02-11
KR102155281B1 true KR102155281B1 (ko) 2020-09-11

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KR1020180082066A Active KR102155281B1 (ko) 2017-07-28 2018-07-16 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법

Country Status (5)

Country Link
US (1) US11651941B2 (https=)
JP (1) JP7145928B2 (https=)
KR (1) KR102155281B1 (https=)
CN (1) CN110914970B (https=)
TW (1) TWI769284B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102760892B1 (ko) * 2021-01-29 2025-02-03 주성엔지니어링(주) 기판처리장치
JP7758447B2 (ja) * 2022-02-10 2025-10-22 東京エレクトロン株式会社 成膜装置

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* Cited by examiner, † Cited by third party
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KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
KR100422398B1 (ko) * 2001-06-29 2004-03-12 주식회사 하이닉스반도체 박막 증착 장비
US6656282B2 (en) * 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
JP3574651B2 (ja) 2002-12-05 2004-10-06 東京エレクトロン株式会社 成膜方法および成膜装置
JP4935687B2 (ja) 2008-01-19 2012-05-23 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
JP5544697B2 (ja) 2008-09-30 2014-07-09 東京エレクトロン株式会社 成膜装置
JP2011074413A (ja) 2009-09-29 2011-04-14 Tokyo Electron Ltd 成膜装置および成膜方法、ならびに基板処理装置
KR101665581B1 (ko) 2010-06-22 2016-10-12 주식회사 원익아이피에스 박막증착방법
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KR20130090287A (ko) * 2012-02-03 2013-08-13 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
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CN104380435B (zh) * 2012-05-29 2018-04-06 周星工程股份有限公司 基板加工装置及基板加工方法
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KR102070400B1 (ko) * 2012-06-29 2020-01-28 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
WO2014003434A1 (ko) * 2012-06-29 2014-01-03 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR101397162B1 (ko) * 2012-08-23 2014-05-19 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6258657B2 (ja) 2013-10-18 2018-01-10 東京エレクトロン株式会社 成膜方法および成膜装置
KR101540718B1 (ko) * 2014-03-11 2015-07-31 국제엘렉트릭코리아 주식회사 기판 처리 장치
JP6087023B2 (ja) * 2014-03-28 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
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JP6479560B2 (ja) 2015-05-01 2019-03-06 東京エレクトロン株式会社 成膜装置
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Also Published As

Publication number Publication date
US11651941B2 (en) 2023-05-16
KR20190013497A (ko) 2019-02-11
US20200219700A1 (en) 2020-07-09
CN110914970A (zh) 2020-03-24
TW201911381A (zh) 2019-03-16
JP7145928B2 (ja) 2022-10-03
TWI769284B (zh) 2022-07-01
JP2020528498A (ja) 2020-09-24
CN110914970B (zh) 2023-10-10

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