TWI769284B - 氣體散佈裝置、基板處理設備及基板處理方法 - Google Patents

氣體散佈裝置、基板處理設備及基板處理方法 Download PDF

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Publication number
TWI769284B
TWI769284B TW107126006A TW107126006A TWI769284B TW I769284 B TWI769284 B TW I769284B TW 107126006 A TW107126006 A TW 107126006A TW 107126006 A TW107126006 A TW 107126006A TW I769284 B TWI769284 B TW I769284B
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Taiwan
Prior art keywords
gas
space
dispersing
module
gas distribution
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TW107126006A
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English (en)
Chinese (zh)
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TW201911381A (zh
Inventor
千珉鎬
金鍾植
黃喆周
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南韓商周星工程股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW107126006A 2017-07-28 2018-07-27 氣體散佈裝置、基板處理設備及基板處理方法 TWI769284B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
KR10-2017-0096375 2017-07-28
KR20170096375 2017-07-28
??10-2017-0096375 2017-07-28
??10-2017-0102535 2017-08-11
KR20170102535 2017-08-11
KR10-2017-0102535 2017-08-11
KR10-2018-0082066 2018-07-16
KR1020180082066A KR102155281B1 (ko) 2017-07-28 2018-07-16 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법
??10-2018-0082066 2018-07-16

Publications (2)

Publication Number Publication Date
TW201911381A TW201911381A (zh) 2019-03-16
TWI769284B true TWI769284B (zh) 2022-07-01

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TW107126006A TWI769284B (zh) 2017-07-28 2018-07-27 氣體散佈裝置、基板處理設備及基板處理方法

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Country Link
US (1) US11651941B2 (https=)
JP (1) JP7145928B2 (https=)
KR (1) KR102155281B1 (https=)
CN (1) CN110914970B (https=)
TW (1) TWI769284B (https=)

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* Cited by examiner, † Cited by third party
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KR102760892B1 (ko) * 2021-01-29 2025-02-03 주성엔지니어링(주) 기판처리장치
JP7758447B2 (ja) * 2022-02-10 2025-10-22 東京エレクトロン株式会社 成膜装置

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KR20030002776A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 박막 증착 장비
KR20120081772A (ko) * 2011-01-12 2012-07-20 주성엔지니어링(주) 가스 공급 장치, 가스 공급 방법 및 이를 구비하는 기판 처리 장치
TW201541540A (zh) * 2014-03-11 2015-11-01 國際電氣高麗股份有限公司 基板處理設備
TW201707057A (zh) * 2015-04-28 2017-02-16 周星工程股份有限公司 基板處理裝置及方法
TW201718929A (zh) * 2015-07-27 2017-06-01 蘭姆研究公司 時間多工化化學傳輸系統

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JP2011074413A (ja) 2009-09-29 2011-04-14 Tokyo Electron Ltd 成膜装置および成膜方法、ならびに基板処理装置
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TW201718929A (zh) * 2015-07-27 2017-06-01 蘭姆研究公司 時間多工化化學傳輸系統

Also Published As

Publication number Publication date
US11651941B2 (en) 2023-05-16
KR20190013497A (ko) 2019-02-11
KR102155281B1 (ko) 2020-09-11
US20200219700A1 (en) 2020-07-09
CN110914970A (zh) 2020-03-24
TW201911381A (zh) 2019-03-16
JP7145928B2 (ja) 2022-10-03
JP2020528498A (ja) 2020-09-24
CN110914970B (zh) 2023-10-10

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