JP7133715B2 - 処理装置及び処理方法 - Google Patents
処理装置及び処理方法 Download PDFInfo
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- JP7133715B2 JP7133715B2 JP2021533018A JP2021533018A JP7133715B2 JP 7133715 B2 JP7133715 B2 JP 7133715B2 JP 2021533018 A JP2021533018 A JP 2021533018A JP 2021533018 A JP2021533018 A JP 2021533018A JP 7133715 B2 JP7133715 B2 JP 7133715B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
- B23K26/0617—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis and with spots spaced along the common axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Description
変形例1として、ステップA2の周縁改質層M1の形成とステップA3の内部面改質層M2の形成の順序を入れ替えてもよい。かかる場合、ウェハ処理は、ステップA1、ステップA3、ステップA2、ステップA4~A7の順で行われる。
変形例2として、ステップA1の未接合領域Aeの形成は、ステップA2の周縁改質層M1の形成後に行われてもよい。かかる場合、ウェハ処理は、ステップA2、ステップA1、ステップA3~A7の順で行われる。
変形例3として、ステップA1の未接合領域Aeの形成は、ステップA3の内部面改質層M2の形成後に行われてもよい。かかる場合、ウェハ処理は、ステップA2~A3、ステップA1、ステップA4~A7の順で行われる。
省略例1として、ステップA5の周縁改質層M1、内部面改質層M2の除去は、ステップA7におけるウェットエッチングにより行われてもよい。かかる場合、ステップA5の研削処理を省略することができる。
省略例2として、ステップA5の研削処理において周縁改質層M1、内部面改質層M2が適切に除去され、また研削痕が形成されていない場合、ステップA7のウェットエッチングを省略することができる。
省略例3として、ウェハ処理システム1に対して、未接合領域Aeが形成された重合ウェハTが搬入される場合、ステップA1の未接合領域Aeの形成を省略することができる。
90 制御装置
100 チャック
104 移動機構
110 レーザヘッド
115 移動機構
L レーザ光
M2 内部面改質層
W 処理ウェハ
Claims (9)
- 処理対象体を処理する処理装置であって、
前記処理対象体を保持する保持部と、
前記保持部を水平方向に移動させる保持部移動機構と、
前記処理対象体の内部にレーザ光を照射して複数の内部面改質層を螺旋状に形成する改質部と、
前記改質部を水平方向に移動させる改質部移動機構と、
前記内部面改質層の形成動作を制御する制御部と、を備え、
前記制御部は、
前記内部面改質層の形成にかかる螺旋加工移動と、
前記保持部と当該保持部に保持された処理対象体との偏心量を補正する偏心追従移動と、を前記保持部と前記改質部とで分担して行うように、前記保持部及び前記改質部の動作を制御する、処理装置。 - 前記制御部は、
前記螺旋加工移動を前記改質部が行い、
前記偏心追従移動を前記保持部が行うように、前記保持部及び前記改質部の動作を制御する、請求項1に記載の処理装置。 - 前記制御部は、
前記螺旋加工移動を前記保持部が行い、
前記偏心追従移動を前記改質部が行うように、前記保持部及び前記改質部の動作を制御する、請求項1に記載の処理装置。 - 前記制御部は、
前記内部面改質層の形成時において、隣接する前記内部面改質層から面方向に進展する亀裂が連結されない第1の改質層形成領域と、
前記内部面改質層の形成時において、隣接する前記内部面改質層から面方向に進展する亀裂が連結される第2の改質層形成領域と、を形成するように前記改質部を制御する、請求項1~3のいずれか一項に記載の処理装置。 - 処理対象体を処理する処理方法であって、
改質部により、保持部に保持された前記処理対象体の内部にレーザ光を照射して内部面改質層を螺旋状に形成し、
前記内部面改質層を螺旋状に形成するための移動と、
前記保持部と当該保持部に保持された処理対象体との偏心量を補正するための移動と、を前記保持部と前記改質部とで分担して行う、処理方法。 - 前記保持部が前記内部面改質層を螺旋状に形成するために移動し、
前記改質部が前記偏心量を補正するために移動する、請求項5に記載の処理方法。 - 前記改質部が前記内部面改質層を螺旋状に形成するために移動し、
前記保持部が前記偏心量を補正するために移動する、請求項5に記載の処理方法。 - 前記内部面改質層の形成にあたり、
保持部に保持された前記処理対象体を相対的に回転させながら、前記改質部から処理対象体の内部に前記レーザ光を周期的に照射し、さらに前記保持部に対して前記改質部を相対的に径方向に移動させて、面方向に螺旋状の前記内部面改質層を形成する、請求項5~7のいずれか一項に記載の処理方法。 - 前記内部面改質層の形成時において、隣接する前記内部面改質層から面方向に進展する亀裂が連結されない第1の改質層形成領域を形成することと、
前記内部面改質層の形成時において、隣接する前記内部面改質層から面方向に進展する亀裂が連結される第2の改質層形成領域を形成することと、を含む、請求項5~8のいずれか一項に記載の処理方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019133013 | 2019-07-18 | ||
JP2019133013 | 2019-07-18 | ||
PCT/JP2020/026884 WO2021010285A1 (ja) | 2019-07-18 | 2020-07-09 | 処理装置及び処理方法 |
Publications (3)
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JPWO2021010285A1 JPWO2021010285A1 (ja) | 2021-01-21 |
JPWO2021010285A5 JPWO2021010285A5 (ja) | 2022-03-28 |
JP7133715B2 true JP7133715B2 (ja) | 2022-09-08 |
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US (1) | US11969827B2 (ja) |
JP (1) | JP7133715B2 (ja) |
KR (1) | KR20220035418A (ja) |
CN (1) | CN114096374B (ja) |
TW (1) | TW202115783A (ja) |
WO (1) | WO2021010285A1 (ja) |
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JP2010247189A (ja) | 2009-04-16 | 2010-11-04 | Shin Etsu Polymer Co Ltd | 半導体ウェーハの製造方法及びその装置 |
JP2014082296A (ja) | 2012-10-16 | 2014-05-08 | Disco Abrasive Syst Ltd | 加工方法 |
JP2018043340A (ja) | 2016-09-15 | 2018-03-22 | 株式会社荏原製作所 | 基板加工方法および基板加工装置 |
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JP4907984B2 (ja) * | 2005-12-27 | 2012-04-04 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップ |
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JP5670765B2 (ja) | 2011-01-13 | 2015-02-18 | 浜松ホトニクス株式会社 | レーザ加工方法 |
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WO2020090896A1 (ja) * | 2018-10-30 | 2020-05-07 | 浜松ホトニクス株式会社 | レーザ加工装置 |
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2020
- 2020-07-06 TW TW109122705A patent/TW202115783A/zh unknown
- 2020-07-09 CN CN202080050517.5A patent/CN114096374B/zh active Active
- 2020-07-09 JP JP2021533018A patent/JP7133715B2/ja active Active
- 2020-07-09 WO PCT/JP2020/026884 patent/WO2021010285A1/ja active Application Filing
- 2020-07-09 US US17/627,702 patent/US11969827B2/en active Active
- 2020-07-09 KR KR1020227004429A patent/KR20220035418A/ko unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053341A (ja) | 2006-08-23 | 2008-03-06 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2010247189A (ja) | 2009-04-16 | 2010-11-04 | Shin Etsu Polymer Co Ltd | 半導体ウェーハの製造方法及びその装置 |
JP2014082296A (ja) | 2012-10-16 | 2014-05-08 | Disco Abrasive Syst Ltd | 加工方法 |
JP2018043340A (ja) | 2016-09-15 | 2018-03-22 | 株式会社荏原製作所 | 基板加工方法および基板加工装置 |
Also Published As
Publication number | Publication date |
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CN114096374A (zh) | 2022-02-25 |
TW202115783A (zh) | 2021-04-16 |
JPWO2021010285A1 (ja) | 2021-01-21 |
US20220250190A1 (en) | 2022-08-11 |
US11969827B2 (en) | 2024-04-30 |
KR20220035418A (ko) | 2022-03-22 |
CN114096374B (zh) | 2024-04-09 |
WO2021010285A1 (ja) | 2021-01-21 |
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