JP7170880B2 - 処理装置及び処理方法 - Google Patents
処理装置及び処理方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Description
変形例1として、ステップA2の周縁改質層M1の形成とステップA3の内部面改質層M2の形成の順序を入れ替えてもよい。かかる場合、ウェハ処理は、ステップA1、ステップA3、ステップA2、ステップA4~A8の順で行われる。
変形例2として、ステップA4の中心改質層M3の形成は、ステップA2の周縁改質層M1の形成前に行われてもよい。かかる場合、ウェハ処理は、ステップA1、ステップA4、ステップA2~A3、ステップA5~A8の順で行われる。
変形例3として、ステップA4の中心改質層M3の形成は、ステップA3の内部面改質層M2の形成前に行われてもよい。かかる場合、ウェハ処理は、ステップA1~A2、ステップA4、ステップA3、ステップA5~A8の順で行われる。
変形例4として、ステップA1の未接合領域Aeの形成は、ステップA2の周縁改質層M1の形成後に行われてもよい。かかる場合、ウェハ処理は、ステップA2、ステップA1、ステップA3~A8の順で行われる。
変形例5として、ステップA1の未接合領域Aeの形成は、ステップA3の内部面改質層M2の形成後に行われてもよい。かかる場合、ウェハ処理は、ステップA2~A3、ステップA1、ステップA4~A8の順で行われる。
省略例1として、ステップA6の周縁改質層M1、内部面改質層M2及び中心改質層M3の除去は、ステップA8におけるウェットエッチングにより行われてもよい。かかる場合、ステップA6の研削処理を省略することができる。
省略例2として、ステップA6の研削処理において周縁改質層M1、内部面改質層M2及び中心改質層M3が適切に除去され、また研削痕が形成されていない場合、ステップA8のウェットエッチングを省略することができる。
省略例3として、ウェハ処理システム1に対して、未接合領域Aeが形成された重合ウェハTが搬入される場合、ステップA1の未接合領域Aeの形成を省略することができる。
90 制御装置
110 レーザヘッド
L レーザ光
B バッファ層
M1 周縁改質層
M2 内部面改質層
W 処理ウェハ
Claims (6)
- 処理対象体を処理する処理装置であって、
前記処理対象体の内部にレーザ光を照射して、面方向に沿って複数の改質層を形成する改質部と、
少なくとも前記改質部の動作を制御する制御部と、を備え、
前記制御部は、
前記処理対象体の除去対象の周縁部の剥離の基点となる周縁改質層と、
前記周縁改質層の径方向内側において、前記周縁改質層と同心円の環状に形成される第1の内部面改質層と、
前記第1の内部面改質層の径方向内側において、螺旋状に形成される第2の内部面改質層と、を形成し、
前記第1の内部面改質層の径方向における加工幅が、前記処理対象体の中心と当該処理対象体を保持する保持部の中心との偏心量よりも大きく形成されるように、前記改質部を制御する、処理装置。 - 前記制御部は、前記第1の内部面改質層の径方向における加工幅の間から、前記第2の内部面改質層の形成を開始するように前記改質部を制御する、請求項1に記載の処理装置。
- 処理対象体を処理する処理方法であって、
改質部により、保持部に保持された前記処理対象体の内部にレーザ光を照射して、面方向に沿って複数の改質層を形成し、
前記処理対象体の除去対象の周縁部の剥離の基点となる周縁改質層を形成することと、
前記周縁改質層の径方向内側において、前記周縁改質層と同心円の環状に形成される第1の内部面改質層を形成することと、
前記第1の内部面改質層の径方向内側において、螺旋状に形成される第2の内部面改質層を形成することと、を含み、
記第1の内部面改質層は、径方向において前記保持部の中心と前記処理対象体の中心との偏心量よりも大きい加工幅で形成される、処理方法。 - 前記第1の内部面改質層の形成にあたり、
前記改質部に対して保持部に保持された前記処理対象体を相対的に回転させながら、前記改質部から処理対象体の内部に前記レーザ光を周期的に照射して、前記周縁改質層と同心円状の第1の内部面改質層を形成し、
その後、前記保持部に対して前記改質部を相対的に径方向に移動させ、
前記周縁改質層と同心円状の前記第1の内部面改質層の形成と前記改質部の径方向への移動とを繰り返し行って、面方向に環状の前記第1の内部面改質層を形成する、請求項3に記載の処理方法。 - 前記第2の内部面改質層は、前記第1の内部面改質層の径方向における加工幅の間から形成が開始される、請求項3に記載の処理方法。
- 前記第2の内部面改質層の形成にあたり、
保持部に保持された前記処理対象体を相対的に回転させながら、前記改質部から処理対象体の内部に前記レーザ光を周期的に照射し、さらに前記保持部に対して前記改質部を相対的に径方向に移動させて、面方向に螺旋状の前記第2の内部面改質層を形成する、請求項3または4に記載の処理方法。
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PCT/JP2020/026891 WO2021010287A1 (ja) | 2019-07-18 | 2020-07-09 | 処理装置及び処理方法 |
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TW202116468A (zh) * | 2019-07-18 | 2021-05-01 | 日商東京威力科創股份有限公司 | 處理裝置及處理方法 |
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JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
JP2016215231A (ja) | 2015-05-19 | 2016-12-22 | パナソニックIpマネジメント株式会社 | 脆性基板のスライス装置及び方法 |
JP2018043340A (ja) | 2016-09-15 | 2018-03-22 | 株式会社荏原製作所 | 基板加工方法および基板加工装置 |
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TW202107553A (zh) | 2021-02-16 |
US20220254638A1 (en) | 2022-08-11 |
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