JPWO2021010287A1 - - Google Patents

Info

Publication number
JPWO2021010287A1
JPWO2021010287A1 JP2021533020A JP2021533020A JPWO2021010287A1 JP WO2021010287 A1 JPWO2021010287 A1 JP WO2021010287A1 JP 2021533020 A JP2021533020 A JP 2021533020A JP 2021533020 A JP2021533020 A JP 2021533020A JP WO2021010287 A1 JPWO2021010287 A1 JP WO2021010287A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021533020A
Other versions
JP7170880B2 (ja
JPWO2021010287A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021010287A1 publication Critical patent/JPWO2021010287A1/ja
Publication of JPWO2021010287A5 publication Critical patent/JPWO2021010287A5/ja
Application granted granted Critical
Publication of JP7170880B2 publication Critical patent/JP7170880B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
JP2021533020A 2019-07-18 2020-07-09 処理装置及び処理方法 Active JP7170880B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019133070 2019-07-18
JP2019133070 2019-07-18
PCT/JP2020/026891 WO2021010287A1 (ja) 2019-07-18 2020-07-09 処理装置及び処理方法

Publications (3)

Publication Number Publication Date
JPWO2021010287A1 true JPWO2021010287A1 (ja) 2021-01-21
JPWO2021010287A5 JPWO2021010287A5 (ja) 2022-03-28
JP7170880B2 JP7170880B2 (ja) 2022-11-14

Family

ID=74210801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021533020A Active JP7170880B2 (ja) 2019-07-18 2020-07-09 処理装置及び処理方法

Country Status (6)

Country Link
US (1) US20220254638A1 (ja)
JP (1) JP7170880B2 (ja)
KR (1) KR20220035441A (ja)
CN (1) CN114096375B (ja)
TW (1) TW202107553A (ja)
WO (1) WO2021010287A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023021952A1 (ja) * 2021-08-16 2023-02-23 東京エレクトロン株式会社 処理方法及び処理システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2016215231A (ja) * 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
JP2018043340A (ja) * 2016-09-15 2018-03-22 株式会社荏原製作所 基板加工方法および基板加工装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4110219B2 (ja) * 2002-08-30 2008-07-02 株式会社東京精密 レーザーダイシング装置
JP4776994B2 (ja) * 2005-07-04 2011-09-21 浜松ホトニクス株式会社 加工対象物切断方法
EP2544220A4 (en) * 2010-03-05 2015-12-02 Namiki Precision Jewel Co Ltd SEMICONDUCTOR SUBSTRATE, PRODUCTION METHOD FOR THE SINGLE CRYSTAL SUBSTRATE, PRODUCTION PROCESS FOR A SINGLE CRYSTAL SUBSTRATE WITH A MULTILAYER FILM AND DEVICE MANUFACTURING METHOD
JP2012109341A (ja) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd 半導体材料の切断方法と切断装置
JP6044919B2 (ja) 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
JP6482425B2 (ja) * 2015-07-21 2019-03-13 株式会社ディスコ ウエーハの薄化方法
JP6523882B2 (ja) * 2015-09-02 2019-06-05 株式会社ディスコ ウエーハの加工方法
JP6504977B2 (ja) * 2015-09-16 2019-04-24 株式会社ディスコ ウエーハの加工方法
JP2017071074A (ja) * 2015-10-05 2017-04-13 国立大学法人埼玉大学 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法
JP6541605B2 (ja) * 2016-03-30 2019-07-10 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法
JP6918420B2 (ja) * 2017-09-14 2021-08-11 株式会社ディスコ ウェーハの加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2016215231A (ja) * 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
JP2018043340A (ja) * 2016-09-15 2018-03-22 株式会社荏原製作所 基板加工方法および基板加工装置

Also Published As

Publication number Publication date
KR20220035441A (ko) 2022-03-22
JP7170880B2 (ja) 2022-11-14
CN114096375A (zh) 2022-02-25
CN114096375B (zh) 2024-01-09
WO2021010287A1 (ja) 2021-01-21
TW202107553A (zh) 2021-02-16
US20220254638A1 (en) 2022-08-11

Similar Documents

Publication Publication Date Title
BR112021017339A2 (ja)
BR112021018450A2 (ja)
BR112021017939A2 (ja)
BR112021017892A2 (ja)
BR112021017738A2 (ja)
BR112021017782A2 (ja)
BR112021018168A2 (ja)
BR112021017728A2 (ja)
BR112021017234A2 (ja)
BR112021017355A2 (ja)
BR112021018102A2 (ja)
BR112021017173A2 (ja)
BR112021017083A2 (ja)
BR112021017637A2 (ja)
BR112021018452A2 (ja)
BR112021018250A2 (ja)
JPWO2020213478A1 (ja)
BR112021018093A2 (ja)
BR112021018084A2 (ja)
BR112021013944A2 (ja)
BR112021018484A2 (ja)
BR112021017732A2 (ja)
JPWO2021010284A1 (ja)
JPWO2021010287A1 (ja)
BR112021015080A2 (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220107

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220922

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221004

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221101

R150 Certificate of patent or registration of utility model

Ref document number: 7170880

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150