JPWO2020213478A1 - - Google Patents

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Publication number
JPWO2020213478A1
JPWO2020213478A1 JP2021514897A JP2021514897A JPWO2020213478A1 JP WO2020213478 A1 JPWO2020213478 A1 JP WO2020213478A1 JP 2021514897 A JP2021514897 A JP 2021514897A JP 2021514897 A JP2021514897 A JP 2021514897A JP WO2020213478 A1 JPWO2020213478 A1 JP WO2020213478A1
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JP
Japan
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JP2021514897A
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JPWO2020213478A5 (ja
JP7178491B2 (ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
JP2021514897A 2019-04-19 2020-04-07 処理装置及び処理方法 Active JP7178491B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019080318 2019-04-19
JP2019080318 2019-04-19
JP2019132984 2019-07-18
JP2019132984 2019-07-18
PCT/JP2020/015686 WO2020213478A1 (ja) 2019-04-19 2020-04-07 処理装置及び処理方法

Publications (3)

Publication Number Publication Date
JPWO2020213478A1 true JPWO2020213478A1 (ja) 2020-10-22
JPWO2020213478A5 JPWO2020213478A5 (ja) 2022-01-13
JP7178491B2 JP7178491B2 (ja) 2022-11-25

Family

ID=72836817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021514897A Active JP7178491B2 (ja) 2019-04-19 2020-04-07 処理装置及び処理方法

Country Status (6)

Country Link
US (1) US20220181157A1 (ja)
JP (1) JP7178491B2 (ja)
KR (1) KR20210153091A (ja)
CN (1) CN113710408B (ja)
TW (1) TW202044391A (ja)
WO (1) WO2020213478A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7460377B2 (ja) * 2020-01-28 2024-04-02 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
KR20240050470A (ko) * 2021-09-06 2024-04-18 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Citations (6)

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JP2017526161A (ja) * 2014-11-27 2017-09-07 シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング 物質変化による固体分離
WO2017199784A1 (ja) * 2016-05-17 2017-11-23 エルシード株式会社 加工対象材料の切断方法
WO2019044588A1 (ja) * 2017-09-04 2019-03-07 リンテック株式会社 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置
JP2020501376A (ja) * 2016-12-12 2020-01-16 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構成部材を備えた固体層を薄くするための方法
JP2020069533A (ja) * 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP2020520087A (ja) * 2017-04-20 2020-07-02 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 規定どおりに配向された改質線を有するウェハの製造方法

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JP4781661B2 (ja) * 2004-11-12 2011-09-28 浜松ホトニクス株式会社 レーザ加工方法
JP5707889B2 (ja) * 2010-11-16 2015-04-30 株式会社東京精密 半導体基板の切断方法及び半導体基板の切断装置
JP5825511B2 (ja) * 2011-06-13 2015-12-02 株式会社東京精密 半導体基板の切断方法
JP6044919B2 (ja) 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
JP6366485B2 (ja) * 2014-12-04 2018-08-01 株式会社ディスコ ウエーハの生成方法
JP6478821B2 (ja) * 2015-06-05 2019-03-06 株式会社ディスコ ウエーハの生成方法
JP2017107903A (ja) * 2015-12-07 2017-06-15 株式会社ディスコ ウェーハの加工方法
JP6604891B2 (ja) * 2016-04-06 2019-11-13 株式会社ディスコ ウエーハの生成方法
JP6651257B2 (ja) * 2016-06-03 2020-02-19 株式会社ディスコ 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置
JP2018195663A (ja) * 2017-05-16 2018-12-06 株式会社ディスコ ウエーハの分割方法
JP6855127B2 (ja) * 2017-06-05 2021-04-07 株式会社ディスコ チップの製造方法
JP2019009191A (ja) * 2017-06-21 2019-01-17 株式会社ディスコ ウェーハの加工方法
JP2019029560A (ja) * 2017-08-01 2019-02-21 株式会社ディスコ レーザ加工装置
JP6918420B2 (ja) * 2017-09-14 2021-08-11 株式会社ディスコ ウェーハの加工方法
JP6703073B2 (ja) * 2018-10-03 2020-06-03 株式会社東京精密 ウェハ加工方法及びウェハ加工システム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017526161A (ja) * 2014-11-27 2017-09-07 シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング 物質変化による固体分離
WO2017199784A1 (ja) * 2016-05-17 2017-11-23 エルシード株式会社 加工対象材料の切断方法
JP2020501376A (ja) * 2016-12-12 2020-01-16 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構成部材を備えた固体層を薄くするための方法
JP2020520087A (ja) * 2017-04-20 2020-07-02 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 規定どおりに配向された改質線を有するウェハの製造方法
WO2019044588A1 (ja) * 2017-09-04 2019-03-07 リンテック株式会社 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置
JP2020069533A (ja) * 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法

Also Published As

Publication number Publication date
KR20210153091A (ko) 2021-12-16
TW202044391A (zh) 2020-12-01
CN113710408A (zh) 2021-11-26
US20220181157A1 (en) 2022-06-09
CN113710408B (zh) 2023-10-31
WO2020213478A1 (ja) 2020-10-22
JP7178491B2 (ja) 2022-11-25

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