JP7127765B2 - 静電チャック、成膜装置、基板吸着方法、成膜方法、及び電子デバイスの製造方法 - Google Patents

静電チャック、成膜装置、基板吸着方法、成膜方法、及び電子デバイスの製造方法 Download PDF

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Publication number
JP7127765B2
JP7127765B2 JP2018161966A JP2018161966A JP7127765B2 JP 7127765 B2 JP7127765 B2 JP 7127765B2 JP 2018161966 A JP2018161966 A JP 2018161966A JP 2018161966 A JP2018161966 A JP 2018161966A JP 7127765 B2 JP7127765 B2 JP 7127765B2
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Japan
Prior art keywords
substrate
electrostatic chuck
electrode
plate portion
film forming
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JP2018161966A
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Japanese (ja)
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JP2019117924A (ja
JP2019117924A5 (enExample
Inventor
一史 柏倉
博 石井
秀和 元矢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sodick Co Ltd
Canon Tokki Corp
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Sodick Co Ltd
Canon Tokki Corp
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Publication of JP2019117924A5 publication Critical patent/JP2019117924A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
JP2018161966A 2017-12-27 2018-08-30 静電チャック、成膜装置、基板吸着方法、成膜方法、及び電子デバイスの製造方法 Active JP7127765B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170180999A KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법
KR10-2017-0180999 2017-12-27

Publications (3)

Publication Number Publication Date
JP2019117924A JP2019117924A (ja) 2019-07-18
JP2019117924A5 JP2019117924A5 (enExample) 2021-09-16
JP7127765B2 true JP7127765B2 (ja) 2022-08-30

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JP2018161966A Active JP7127765B2 (ja) 2017-12-27 2018-08-30 静電チャック、成膜装置、基板吸着方法、成膜方法、及び電子デバイスの製造方法

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JP (1) JP7127765B2 (enExample)
KR (1) KR20190100980A (enExample)
CN (1) CN109972085B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020262409A1 (ja) 2019-06-25 2020-12-30 日本放送協会 符号化装置、復号装置、及びプログラム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
US20120288619A1 (en) 2011-05-11 2012-11-15 Choi Young-Mook Electrostatic chuck, thin film deposition apparatus including the electrostatic chuck, and method of manufacturing organic light emitting display apparatus by using the thin film deposition apparatus
WO2012165250A1 (ja) 2011-05-30 2012-12-06 株式会社クリエイティブ テクノロジー 静電吸着体及びこれを用いた静電吸着装置
JP2016539489A (ja) 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 集積静電チャックを備えた基板キャリア
JP2017139493A (ja) 2012-03-27 2017-08-10 株式会社ニコン 基板の装着及び取外し装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095932A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JP2003158174A (ja) * 2001-11-22 2003-05-30 Canon Inc 静電吸着装置、その製造方法及び固定保持方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2007246983A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 成膜装置
JP2008041993A (ja) * 2006-08-08 2008-02-21 Shinko Electric Ind Co Ltd 静電チャック
CN101316777B (zh) * 2006-09-29 2012-01-18 信越工程株式会社 工件移送方法和静电吸盘装置以及基板粘贴方法
US8730644B2 (en) * 2008-07-08 2014-05-20 Creative Technology Corporation Bipolar electrostatic chuck
JP5508737B2 (ja) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
KR100965414B1 (ko) * 2010-03-12 2010-06-24 엘아이지에이디피 주식회사 바이폴라 전극 패턴이 형성된 정전 척
CN103066000B (zh) * 2011-10-19 2015-11-25 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
JP6217303B2 (ja) * 2013-10-17 2017-10-25 株式会社シンコーモールド 導電性シリコーンゴム製電極パターンの作製方法並びにオールシリコーンゴム製静電チャック及びその製造方法
KR102308906B1 (ko) * 2015-03-26 2021-10-06 삼성디스플레이 주식회사 정전 척 시스템과, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
KR101853889B1 (ko) * 2016-02-29 2018-05-02 주식회사 선익시스템 정전척을 이용한 기판 얼라인 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
US20120288619A1 (en) 2011-05-11 2012-11-15 Choi Young-Mook Electrostatic chuck, thin film deposition apparatus including the electrostatic chuck, and method of manufacturing organic light emitting display apparatus by using the thin film deposition apparatus
WO2012165250A1 (ja) 2011-05-30 2012-12-06 株式会社クリエイティブ テクノロジー 静電吸着体及びこれを用いた静電吸着装置
JP2017139493A (ja) 2012-03-27 2017-08-10 株式会社ニコン 基板の装着及び取外し装置
JP2016539489A (ja) 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 集積静電チャックを備えた基板キャリア

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Publication number Publication date
CN109972085A (zh) 2019-07-05
JP2019117924A (ja) 2019-07-18
CN109972085B (zh) 2023-05-19
KR20190100980A (ko) 2019-08-30

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