KR20190100980A - 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법 - Google Patents

정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법 Download PDF

Info

Publication number
KR20190100980A
KR20190100980A KR1020170180999A KR20170180999A KR20190100980A KR 20190100980 A KR20190100980 A KR 20190100980A KR 1020170180999 A KR1020170180999 A KR 1020170180999A KR 20170180999 A KR20170180999 A KR 20170180999A KR 20190100980 A KR20190100980 A KR 20190100980A
Authority
KR
South Korea
Prior art keywords
electrostatic chuck
substrate
electrode
adsorption
plate portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020170180999A
Other languages
English (en)
Korean (ko)
Inventor
카즈히토 카시쿠라
히로시 이시이
히데카즈 모토야
Original Assignee
캐논 톡키 가부시키가이샤
가부시키가이샤 소딕
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤, 가부시키가이샤 소딕 filed Critical 캐논 톡키 가부시키가이샤
Priority to KR1020170180999A priority Critical patent/KR20190100980A/ko
Priority to JP2018161966A priority patent/JP7127765B2/ja
Priority to CN201811010072.9A priority patent/CN109972085B/zh
Publication of KR20190100980A publication Critical patent/KR20190100980A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H01L51/0011—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
KR1020170180999A 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법 Ceased KR20190100980A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170180999A KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법
JP2018161966A JP7127765B2 (ja) 2017-12-27 2018-08-30 静電チャック、成膜装置、基板吸着方法、成膜方法、及び電子デバイスの製造方法
CN201811010072.9A CN109972085B (zh) 2017-12-27 2018-08-31 静电吸盘、成膜装置、基板的吸附方法、成膜方法以及电子设备的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170180999A KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190105026A Division KR20190103123A (ko) 2019-08-27 2019-08-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

Publications (1)

Publication Number Publication Date
KR20190100980A true KR20190100980A (ko) 2019-08-30

Family

ID=67076017

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170180999A Ceased KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

Country Status (3)

Country Link
JP (1) JP7127765B2 (enExample)
KR (1) KR20190100980A (enExample)
CN (1) CN109972085B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020262409A1 (ja) 2019-06-25 2020-12-30 日本放送協会 符号化装置、復号装置、及びプログラム

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095932A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JP2003158174A (ja) * 2001-11-22 2003-05-30 Canon Inc 静電吸着装置、その製造方法及び固定保持方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2007246983A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 成膜装置
JP2008041993A (ja) * 2006-08-08 2008-02-21 Shinko Electric Ind Co Ltd 静電チャック
CN101316777B (zh) * 2006-09-29 2012-01-18 信越工程株式会社 工件移送方法和静电吸盘装置以及基板粘贴方法
US8730644B2 (en) * 2008-07-08 2014-05-20 Creative Technology Corporation Bipolar electrostatic chuck
JP5508737B2 (ja) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
KR100965414B1 (ko) * 2010-03-12 2010-06-24 엘아이지에이디피 주식회사 바이폴라 전극 패턴이 형성된 정전 척
JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
KR101923174B1 (ko) 2011-05-11 2018-11-29 삼성디스플레이 주식회사 정전 척, 상기 정전 척을 포함하는 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
WO2012165250A1 (ja) 2011-05-30 2012-12-06 株式会社クリエイティブ テクノロジー 静電吸着体及びこれを用いた静電吸着装置
CN103066000B (zh) * 2011-10-19 2015-11-25 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
TWI575330B (zh) 2012-03-27 2017-03-21 尼康股份有限公司 光罩搬送裝置、光罩保持裝置、基板處理裝置、及元件製造方法
US10304713B2 (en) 2013-09-20 2019-05-28 Applied Materials, Inc. Substrate carrier with integrated electrostatic chuck
JP6217303B2 (ja) * 2013-10-17 2017-10-25 株式会社シンコーモールド 導電性シリコーンゴム製電極パターンの作製方法並びにオールシリコーンゴム製静電チャック及びその製造方法
KR102308906B1 (ko) * 2015-03-26 2021-10-06 삼성디스플레이 주식회사 정전 척 시스템과, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
KR101853889B1 (ko) * 2016-02-29 2018-05-02 주식회사 선익시스템 정전척을 이용한 기판 얼라인 방법

Also Published As

Publication number Publication date
CN109972085A (zh) 2019-07-05
JP7127765B2 (ja) 2022-08-30
JP2019117924A (ja) 2019-07-18
CN109972085B (zh) 2023-05-19

Similar Documents

Publication Publication Date Title
KR102014610B1 (ko) 정전척, 성막 장치, 기판 흡착/박리 방법, 성막 방법, 및 전자 디바이스의 제조 방법
KR101933807B1 (ko) 성막장치 및 이를 사용한 유기 el 표시장치의 제조방법
CN109837505B (zh) 成膜装置、成膜方法以及有机el显示装置的制造方法
KR101960194B1 (ko) 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법
KR102008581B1 (ko) 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법
KR102427823B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR101963982B1 (ko) 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법
KR102010158B1 (ko) 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법
KR102505832B1 (ko) 흡착장치, 위치 조정 방법, 및 성막 방법
JP7241048B2 (ja) 基板支持装置および成膜装置
CN111128828B (zh) 吸附及对准方法、吸附系统、成膜方法及装置、电子器件的制造方法
CN109957775B (zh) 静电吸盘、成膜装置、基板的保持及分离方法、成膜方法
CN109913842B (zh) 静电吸盘装置、掩模安装装置、成膜装置、成膜方法及电子设备的制造方法
KR20190103123A (ko) 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법
KR20190100980A (ko) 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법
KR102430370B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102085446B1 (ko) 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법
KR102421610B1 (ko) 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조방법
KR102050688B1 (ko) 마스크 부착장치, 성막장치, 성막방법, 및 전자 디바이스의 제조방법
KR20210029899A (ko) 흡착 장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20171227

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180730

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20171227

Comment text: Patent Application

PA0302 Request for accelerated examination

Patent event date: 20180821

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

Patent event date: 20171227

Patent event code: PA03021R01I

Comment text: Patent Application

PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20181224

Patent event code: PE09021S01D

PE0601 Decision on rejection of patent

Patent event date: 20190528

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20181224

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

A107 Divisional application of patent
J201 Request for trial against refusal decision
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20190827

Patent event code: PA01071R01D

PJ0201 Trial against decision of rejection

Patent event date: 20190827

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20190528

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20200925

Appeal identifier: 2019101002862

Request date: 20190827

PG1501 Laying open of application
J301 Trial decision

Free format text: TRIAL NUMBER: 2019101002862; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20190827

Effective date: 20200925

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20200925

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20190827

Decision date: 20200925

Appeal identifier: 2019101002862