JP7123986B2 - 半導体デバイスを製造するための方法および半導体デバイス - Google Patents
半導体デバイスを製造するための方法および半導体デバイス Download PDFInfo
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- JP7123986B2 JP7123986B2 JP2019571579A JP2019571579A JP7123986B2 JP 7123986 B2 JP7123986 B2 JP 7123986B2 JP 2019571579 A JP2019571579 A JP 2019571579A JP 2019571579 A JP2019571579 A JP 2019571579A JP 7123986 B2 JP7123986 B2 JP 7123986B2
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Description
Claims (12)
- FinFET(電界効果トランジスタ)デバイスの垂直半導体フィンの一部の上にダミー・ゲート構造を形成することと、
前記ダミー・ゲート構造上に多層ゲート・スペーサを形成することと、
を含む半導体デバイスを製造するための方法であって、
前記多層ゲート・スペーサが第1の誘電体層および第2の誘電体層を含み、
前記第1の誘電体層が前記垂直半導体フィンおよび前記第2の誘電体層に対してエッチング選択性を有し、
前記ダミー・ゲート構造上に前記多層ゲート・スペーサを形成することが、
前記ダミー・ゲート構造および前記垂直半導体フィン上に誘電体材料の第1の共形層を付着させることと、
誘電体材料の前記第1の共形層上に誘電体材料の第2の共形層を付着させることと、
誘電体材料の前記第2の共形層を誘電体材料の前記第1の共形層に対して選択的にエッチングして、前記ダミー・ゲート構造を形成していない前記垂直半導体フィンの上面および側面に付着した誘電体材料の前記第2の共形層を除去して、前記多層ゲート・スペーサの前記第2の誘電体層を形成することと、
誘電体材料の前記第1の共形層の露出部分を前記垂直半導体フィンおよび前記多層ゲート・スペーサの前記第2の誘電体層に対して選択的にエッチングして、前記ダミー・ゲート構造を形成していない前記垂直半導体フィンの上面および側面に付着した誘電体材料の前記第1の共形層を除去して、前記多層ゲート・スペーサの前記第1の誘電体層を形成し、かつ前記垂直半導体フィンのソース/ドレイン領域の上面および側面を露出させることと、
を含む、
方法。 - 前記第1の誘電体層がシリコン酸炭窒化物(SiOCN)を含む、請求項1に記載の方法。
- 前記第1の誘電体層が2nm~5nmの範囲の厚さを有する、請求項2に記載の方法。
- 前記第2の誘電体層がシリコン硼炭窒化物(SiBCN)を含む、請求項2に記載の方法。
- 前記第2の誘電体層が5nm~20nmの範囲の厚さを有する、請求項4に記載の方法。
- 誘電体材料の前記第1の共形層がシリコン酸炭窒化物(SiOCN)を含む、請求項1に記載の方法。
- 誘電体材料の前記第1の共形層が2nm~5nmの範囲の厚さで形成されている、請求項6に記載の方法。
- 誘電体材料の前記第2の共形層がシリコン硼炭窒化物(SiBCN)を含む、請求項1に記載の方法。
- 誘電体材料の前記第2の共形層が5nm~20nmの範囲の厚さで形成されている、請求項8に記載の方法。
- 前記垂直半導体フィンの前記露出したソース/ドレイン領域上にエピタキシャル半導体材料の層をエピタキシャル成長させることをさらに含む、請求項1に記載の方法。
- 前記ダミー・ゲート構造を除去し、前記ダミー・ゲート構造の代わりに金属ゲート構造を形成することをさらに含む、請求項10に記載の方法。
- 前記金属ゲート構造が高k金属ゲート構造を含む、請求項11に記載の方法。
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US15/639,721 | 2017-06-30 | ||
PCT/IB2018/054653 WO2019003078A1 (en) | 2017-06-30 | 2018-06-25 | USE OF A MULTILAYER GRID SPACER TO REDUCE THE EROSION OF A SEMICONDUCTOR FIN IN THE MODELING OF A SPACER |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10243079B2 (en) * | 2017-06-30 | 2019-03-26 | International Business Machines Corporation | Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning |
US10483372B2 (en) | 2017-09-29 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer structure with high plasma resistance for semiconductor devices |
KR102532118B1 (ko) * | 2018-03-20 | 2023-05-11 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US11038036B2 (en) * | 2018-09-26 | 2021-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Separate epitaxy layers for nanowire stack GAA device |
US11869891B2 (en) * | 2018-09-28 | 2024-01-09 | Intel Corporation | Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
US11658212B2 (en) * | 2019-02-13 | 2023-05-23 | Intel Corporation | Quantum dot devices with conductive liners |
CN112466945B (zh) * | 2019-09-06 | 2023-10-20 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US11424165B2 (en) | 2019-10-16 | 2022-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor |
US11417750B2 (en) * | 2020-01-31 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate air spacer for fin-like field effect transistor |
US12009395B2 (en) | 2021-08-17 | 2024-06-11 | International Business Machines Corporation | Self-aligned block for vertical FETs |
US20230119827A1 (en) * | 2021-10-20 | 2023-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device Structure And Method For Forming The Same |
USD1028505S1 (en) | 2022-03-11 | 2024-05-28 | Magpul Industries Corp. | Long gun case |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160042952A1 (en) | 2014-08-11 | 2016-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Semiconductor Device Fabrication |
US20160343861A1 (en) | 2015-05-22 | 2016-11-24 | International Business Machines Corporation | Structure and process to tuck fin tips self-aligned to gates |
US20160372567A1 (en) | 2015-06-18 | 2016-12-22 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
Family Cites Families (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043778A (en) | 1986-08-11 | 1991-08-27 | Texas Instruments Incorporated | Oxide-isolated source/drain transistor |
US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
US6849193B2 (en) | 1999-03-25 | 2005-02-01 | Hoiman Hung | Highly selective process for etching oxide over nitride using hexafluorobutadiene |
US6306702B1 (en) | 1999-08-24 | 2001-10-23 | Advanced Micro Devices, Inc. | Dual spacer method of forming CMOS transistors with substantially the same sub 0.25 micron gate length |
KR100416377B1 (ko) | 2001-06-02 | 2004-01-31 | 삼성전자주식회사 | ㄴ 자형 스페이서를 이용하는 반도체 트랜지스터 및 그제조 방법 |
JP4343571B2 (ja) | 2002-07-31 | 2009-10-14 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US7902029B2 (en) | 2002-08-12 | 2011-03-08 | Acorn Technologies, Inc. | Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor |
US6632745B1 (en) | 2002-08-16 | 2003-10-14 | Chartered Semiconductor Manufacturing Ltd. | Method of forming almost L-shaped spacer for improved ILD gap fill |
US20060074232A1 (en) | 2004-10-04 | 2006-04-06 | Stowers Institute For Medical Research | Matrimony gene and protein |
US7365378B2 (en) | 2005-03-31 | 2008-04-29 | International Business Machines Corporation | MOSFET structure with ultra-low K spacer |
US20070196991A1 (en) | 2006-02-01 | 2007-08-23 | Texas Instruments Incorporated | Semiconductor device having a strain inducing sidewall spacer and a method of manufacture therefor |
US7495280B2 (en) | 2006-05-16 | 2009-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with corner spacers |
US7456068B2 (en) | 2006-06-08 | 2008-11-25 | Intel Corporation | Forming ultra-shallow junctions |
US7488659B2 (en) | 2007-03-28 | 2009-02-10 | International Business Machines Corporation | Structure and methods for stress concentrating spacer |
US7652332B2 (en) | 2007-08-10 | 2010-01-26 | International Business Machines Corporation | Extremely-thin silicon-on-insulator transistor with raised source/drain |
US7919379B2 (en) | 2007-09-10 | 2011-04-05 | International Business Machines Corporation | Dielectric spacer removal |
US7795097B2 (en) | 2007-11-20 | 2010-09-14 | Texas Instruments Incorporated | Semiconductor device manufactured by removing sidewalls during replacement gate integration scheme |
US8226840B2 (en) | 2008-05-02 | 2012-07-24 | Micron Technology, Inc. | Methods of removing silicon dioxide |
US7919792B2 (en) | 2008-12-18 | 2011-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Standard cell architecture and methods with variable design rules |
US8383503B2 (en) | 2009-08-05 | 2013-02-26 | GlobalFoundries, Inc. | Methods for forming semiconductor structures using selectively-formed sidewall spacers |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
CN102024761A (zh) * | 2009-09-18 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 用于形成半导体集成电路器件的方法 |
US9263276B2 (en) | 2009-11-18 | 2016-02-16 | International Business Machines Corporation | High-k/metal gate transistor with L-shaped gate encapsulation layer |
US9117905B2 (en) * | 2009-12-22 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for incorporating impurity element in EPI silicon process |
US9595477B2 (en) * | 2011-01-20 | 2017-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including an epitaxy region |
US8445334B1 (en) | 2011-12-20 | 2013-05-21 | International Business Machines Corporation | SOI FinFET with recessed merged Fins and liner for enhanced stress coupling |
US20130214364A1 (en) * | 2012-02-16 | 2013-08-22 | International Business Machines Corporation | Replacement gate electrode with a tantalum alloy metal layer |
US8637371B2 (en) * | 2012-02-16 | 2014-01-28 | International Business Machines Corporation | Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same |
US8906760B2 (en) | 2012-03-22 | 2014-12-09 | Tokyo Electron Limited | Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for FinFET scheme |
US9224840B2 (en) | 2012-07-10 | 2015-12-29 | GlobalFoundries, Inc. | Replacement gate FinFET structures with high mobility channel |
US9136177B2 (en) * | 2012-07-30 | 2015-09-15 | Globalfoundries Inc. | Methods of forming transistor devices with high-k insulation layers and the resulting devices |
US8741701B2 (en) | 2012-08-14 | 2014-06-03 | International Business Machines Corporation | Fin structure formation including partial spacer removal |
KR101921465B1 (ko) | 2012-08-22 | 2018-11-26 | 삼성전자 주식회사 | 반도체 소자 및 이의 제조 방법 |
US8946791B2 (en) | 2012-08-31 | 2015-02-03 | International Business Machines Corporation | Finfet with reduced parasitic capacitance |
US8937369B2 (en) | 2012-10-01 | 2015-01-20 | United Microelectronics Corp. | Transistor with non-uniform stress layer with stress concentrated regions |
US9064948B2 (en) * | 2012-10-22 | 2015-06-23 | Globalfoundries Inc. | Methods of forming a semiconductor device with low-k spacers and the resulting device |
US8809920B2 (en) | 2012-11-07 | 2014-08-19 | International Business Machines Corporation | Prevention of fin erosion for semiconductor devices |
US8815668B2 (en) | 2012-12-07 | 2014-08-26 | International Business Machines Corporation | Preventing FIN erosion and limiting Epi overburden in FinFET structures by composite hardmask |
US8865549B2 (en) | 2012-12-07 | 2014-10-21 | Texas Instruments Incorporated | Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US9293534B2 (en) * | 2014-03-21 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of dislocations in source and drain regions of FinFET devices |
US8765546B1 (en) | 2013-06-24 | 2014-07-01 | United Microelectronics Corp. | Method for fabricating fin-shaped field-effect transistor |
US9306036B2 (en) | 2013-07-30 | 2016-04-05 | Globalfoundries Inc. | Nitride spacer for protecting a fin-shaped field effect transistor (finFET) device |
US9349835B2 (en) | 2013-09-16 | 2016-05-24 | Globalfoundries Inc. | Methods for replacing gate sidewall materials with a low-k spacer |
US20150076654A1 (en) | 2013-09-17 | 2015-03-19 | Global Foundries Inc. | Enlarged fin tip profile for fins of a field effect transistor (finfet) device |
US9209178B2 (en) | 2013-11-25 | 2015-12-08 | International Business Machines Corporation | finFET isolation by selective cyclic etch |
US9406778B2 (en) * | 2014-01-15 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and formation thereof |
CN104795362B (zh) | 2014-01-16 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | 一种制作半导体器件的方法 |
US9064801B1 (en) | 2014-01-23 | 2015-06-23 | International Business Machines Corporation | Bi-layer gate cap for self-aligned contact formation |
US20150214331A1 (en) * | 2014-01-30 | 2015-07-30 | Globalfoundries Inc. | Replacement metal gate including dielectric gate material |
US9378975B2 (en) | 2014-02-10 | 2016-06-28 | Tokyo Electron Limited | Etching method to form spacers having multiple film layers |
US9412656B2 (en) | 2014-02-14 | 2016-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reverse tone self-aligned contact |
US9312354B2 (en) | 2014-02-21 | 2016-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact etch stop layers of a field effect transistor |
US9123744B1 (en) | 2014-03-07 | 2015-09-01 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US9252233B2 (en) | 2014-03-12 | 2016-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air-gap offset spacer in FinFET structure |
US9202751B2 (en) | 2014-04-07 | 2015-12-01 | Globalfoundries Inc. | Transistor contacts self-aligned in two dimensions |
US9640625B2 (en) | 2014-04-25 | 2017-05-02 | Globalfoundries Inc. | Self-aligned gate contact formation |
US9660057B2 (en) * | 2014-06-17 | 2017-05-23 | Stmicroelectronics, Inc. | Method of forming a reduced resistance fin structure |
US20160005868A1 (en) | 2014-07-01 | 2016-01-07 | Globalfoundries Inc. | Finfet with confined epitaxy |
US9536879B2 (en) | 2014-07-09 | 2017-01-03 | International Business Machines Corporation | FinFET with constrained source-drain epitaxial region |
KR102264542B1 (ko) * | 2014-08-04 | 2021-06-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
US9412820B2 (en) * | 2014-08-11 | 2016-08-09 | Stmicroelectronics, Inc. | Semiconductor device with thinned channel region and related methods |
US10164108B2 (en) | 2014-10-17 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device and method for forming the same |
CN105679824B (zh) * | 2014-11-18 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其制造方法 |
US10950722B2 (en) | 2014-12-31 | 2021-03-16 | Stmicroelectronics, Inc. | Vertical gate all-around transistor |
US9337094B1 (en) | 2015-01-05 | 2016-05-10 | International Business Machines Corporation | Method of forming contact useful in replacement metal gate processing and related semiconductor structure |
CN105845627A (zh) | 2015-01-14 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法、电子装置 |
US9330983B1 (en) * | 2015-02-16 | 2016-05-03 | International Business Machines Corporation | CMOS NFET and PFET comparable spacer width |
US9514997B2 (en) | 2015-03-25 | 2016-12-06 | International Business Machines Corporation | Silicon-germanium FinFET device with controlled junction |
US10032910B2 (en) | 2015-04-24 | 2018-07-24 | GlobalFoundries, Inc. | FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same |
KR102394938B1 (ko) | 2015-05-21 | 2022-05-09 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자의 제조 방법 |
US9397003B1 (en) * | 2015-05-27 | 2016-07-19 | Globalfoundries Inc. | Method for forming source/drain contacts during CMOS integration using confined epitaxial growth techniques |
US9455331B1 (en) | 2015-07-10 | 2016-09-27 | International Business Machines Corporation | Method and structure of forming controllable unmerged epitaxial material |
US9576980B1 (en) * | 2015-08-20 | 2017-02-21 | International Business Machines Corporation | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure |
US9620644B2 (en) | 2015-09-02 | 2017-04-11 | International Business Machines Corporation | Composite spacer enabling uniform doping in recessed fin devices |
US9576954B1 (en) * | 2015-09-23 | 2017-02-21 | International Business Machines Corporation | POC process flow for conformal recess fill |
US9443848B1 (en) | 2015-09-24 | 2016-09-13 | International Business Machines Corporation | Methods for contact formation for 10 nanometers and beyond with minimal mask counts |
US9577102B1 (en) | 2015-09-25 | 2017-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming gate and finFET |
CN106611709B (zh) * | 2015-10-15 | 2019-09-03 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法、电子装置 |
US9887289B2 (en) * | 2015-12-14 | 2018-02-06 | International Business Machines Corporation | Method and structure of improving contact resistance for passive and long channel devices |
US9577038B1 (en) * | 2015-12-15 | 2017-02-21 | International Business Machines Corporation | Structure and method to minimize junction capacitance in nano sheets |
US9634009B1 (en) * | 2015-12-18 | 2017-04-25 | International Business Machines Corporation | System and method for source-drain extension in FinFETs |
US9899526B2 (en) | 2016-01-15 | 2018-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin-type field effect transistor structure and manufacturing method thereof |
US9450095B1 (en) | 2016-02-04 | 2016-09-20 | International Business Machines Corporation | Single spacer for complementary metal oxide semiconductor process flow |
US9508604B1 (en) | 2016-04-29 | 2016-11-29 | Globalfoundries Inc. | Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers |
US9893171B2 (en) * | 2016-06-03 | 2018-02-13 | International Business Machines Corporation | Fin field effect transistor fabrication and devices having inverted T-shaped gate |
US10297614B2 (en) * | 2016-08-09 | 2019-05-21 | International Business Machines Corporation | Gate top spacer for FinFET |
US9647112B1 (en) * | 2016-09-22 | 2017-05-09 | International Business Machines Corporation | Fabrication of strained vertical P-type field effect transistors by bottom condensation |
KR102310079B1 (ko) * | 2017-03-03 | 2021-10-08 | 삼성전자주식회사 | 반도체 소자 |
US10243079B2 (en) * | 2017-06-30 | 2019-03-26 | International Business Machines Corporation | Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning |
US10134859B1 (en) * | 2017-11-09 | 2018-11-20 | International Business Machines Corporation | Transistor with asymmetric spacers |
US10361125B2 (en) * | 2017-12-19 | 2019-07-23 | International Business Machines Corporation | Methods and structures for forming uniform fins when using hardmask patterns |
US10431495B1 (en) * | 2018-07-23 | 2019-10-01 | International Business Machines Corporation | Semiconductor device with local connection |
-
2017
- 2017-06-30 US US15/639,721 patent/US10243079B2/en active Active
-
2018
- 2018-06-25 DE DE112018003323.6T patent/DE112018003323T5/de active Pending
- 2018-06-25 CN CN201880028471.XA patent/CN110603647A/zh active Pending
- 2018-06-25 WO PCT/IB2018/054653 patent/WO2019003078A1/en active Application Filing
- 2018-06-25 JP JP2019571579A patent/JP7123986B2/ja active Active
- 2018-06-25 GB GB2001032.8A patent/GB2579463B/en active Active
-
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- 2019-02-05 US US16/267,618 patent/US10790393B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160042952A1 (en) | 2014-08-11 | 2016-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Semiconductor Device Fabrication |
US20160343861A1 (en) | 2015-05-22 | 2016-11-24 | International Business Machines Corporation | Structure and process to tuck fin tips self-aligned to gates |
US20160372567A1 (en) | 2015-06-18 | 2016-12-22 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
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JP2020526018A (ja) | 2020-08-27 |
US10790393B2 (en) | 2020-09-29 |
US20190006506A1 (en) | 2019-01-03 |
US10243079B2 (en) | 2019-03-26 |
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