JP7121506B2 - 探索装置、探索方法及びプラズマ処理装置 - Google Patents

探索装置、探索方法及びプラズマ処理装置 Download PDF

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JP7121506B2
JP7121506B2 JP2018046238A JP2018046238A JP7121506B2 JP 7121506 B2 JP7121506 B2 JP 7121506B2 JP 2018046238 A JP2018046238 A JP 2018046238A JP 2018046238 A JP2018046238 A JP 2018046238A JP 7121506 B2 JP7121506 B2 JP 7121506B2
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JP2019159864A5 (enExample
JP2019159864A (ja
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裕 奥山
健史 大森
優 栗原
百科 中田
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Hitachi High Tech Corp
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Priority to CN201811578970.4A priority patent/CN110276470B/zh
Priority to TW108103411A priority patent/TWI719398B/zh
Priority to US16/284,879 priority patent/US11657059B2/en
Publication of JP2019159864A publication Critical patent/JP2019159864A/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
    • G05B13/042—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators in which a parameter or coefficient is automatically adjusted to optimise the performance
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    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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JP2018046238A 2018-03-13 2018-03-14 探索装置、探索方法及びプラズマ処理装置 Active JP7121506B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2018046238A JP7121506B2 (ja) 2018-03-14 2018-03-14 探索装置、探索方法及びプラズマ処理装置
KR1020180150325A KR102113096B1 (ko) 2018-03-14 2018-11-29 탐색 장치, 탐색 방법 및 플라스마 처리 장치
CN201811578970.4A CN110276470B (zh) 2018-03-14 2018-12-21 探索装置、探索方法以及等离子处理装置
TW108103411A TWI719398B (zh) 2018-03-14 2019-01-30 探索裝置、探索方法及電漿處理裝置
US16/284,879 US11657059B2 (en) 2018-03-14 2019-02-25 Search device, searching method, and plasma processing apparatus
US17/241,826 US11907235B2 (en) 2018-03-14 2021-04-27 Plasma processing apparatus including predictive control
US18/124,112 US20230222131A1 (en) 2018-03-13 2023-03-21 Search device, searching method, and plasma processing apparatus

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JP2019159864A5 JP2019159864A5 (enExample) 2020-12-10
JP7121506B2 true JP7121506B2 (ja) 2022-08-18

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US (3) US11657059B2 (enExample)
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KR (1) KR102113096B1 (enExample)
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TW (1) TWI719398B (enExample)

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