JP7110034B2 - エッチングする方法及びプラズマ処理装置 - Google Patents

エッチングする方法及びプラズマ処理装置 Download PDF

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Publication number
JP7110034B2
JP7110034B2 JP2018157570A JP2018157570A JP7110034B2 JP 7110034 B2 JP7110034 B2 JP 7110034B2 JP 2018157570 A JP2018157570 A JP 2018157570A JP 2018157570 A JP2018157570 A JP 2018157570A JP 7110034 B2 JP7110034 B2 JP 7110034B2
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region
substrate
gas
plasma
chamber
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Japanese (ja)
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JP2020031190A (ja
JP2020031190A5 (enExample
Inventor
光紘 岩野
正徳 細谷
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018157570A priority Critical patent/JP7110034B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020217007621A priority patent/KR102767140B1/ko
Priority to CN201980053944.6A priority patent/CN112567502B/zh
Priority to US17/270,499 priority patent/US11710643B2/en
Priority to PCT/JP2019/031859 priority patent/WO2020040005A1/ja
Priority to TW108129968A priority patent/TWI811432B/zh
Publication of JP2020031190A publication Critical patent/JP2020031190A/ja
Publication of JP2020031190A5 publication Critical patent/JP2020031190A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018157570A 2018-08-24 2018-08-24 エッチングする方法及びプラズマ処理装置 Active JP7110034B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018157570A JP7110034B2 (ja) 2018-08-24 2018-08-24 エッチングする方法及びプラズマ処理装置
CN201980053944.6A CN112567502B (zh) 2018-08-24 2019-08-13 蚀刻的方法和等离子体处理装置
US17/270,499 US11710643B2 (en) 2018-08-24 2019-08-13 Method of etching and plasma processing apparatus
PCT/JP2019/031859 WO2020040005A1 (ja) 2018-08-24 2019-08-13 エッチングする方法及びプラズマ処理装置
KR1020217007621A KR102767140B1 (ko) 2018-08-24 2019-08-13 에칭하는 방법 및 플라즈마 처리 장치
TW108129968A TWI811432B (zh) 2018-08-24 2019-08-22 蝕刻方法及電漿處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018157570A JP7110034B2 (ja) 2018-08-24 2018-08-24 エッチングする方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2020031190A JP2020031190A (ja) 2020-02-27
JP2020031190A5 JP2020031190A5 (enExample) 2021-07-26
JP7110034B2 true JP7110034B2 (ja) 2022-08-01

Family

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JP2018157570A Active JP7110034B2 (ja) 2018-08-24 2018-08-24 エッチングする方法及びプラズマ処理装置

Country Status (6)

Country Link
US (1) US11710643B2 (enExample)
JP (1) JP7110034B2 (enExample)
KR (1) KR102767140B1 (enExample)
CN (1) CN112567502B (enExample)
TW (1) TWI811432B (enExample)
WO (1) WO2020040005A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117577524A (zh) * 2020-09-18 2024-02-20 东京毅力科创株式会社 蚀刻方法和等离子体处理装置
JP7492928B2 (ja) * 2021-02-10 2024-05-30 東京エレクトロン株式会社 基板支持器、プラズマ処理システム及びプラズマエッチング方法
US12347645B2 (en) * 2021-04-27 2025-07-01 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
TWI828187B (zh) * 2021-06-22 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US12308250B2 (en) * 2022-05-12 2025-05-20 Tokyo Electron Limited Pre-etch treatment for metal etch
CN119340234A (zh) * 2023-07-20 2025-01-21 中微半导体设备(上海)股份有限公司 用于等离子体刻蚀的气体、气体组合、刻蚀方法及设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053061A (ja) 1999-08-06 2001-02-23 Hitachi Ltd ドライエッチング方法
JP2007284794A (ja) 2006-04-19 2007-11-01 Maxim Integrated Products Inc 膜の堆積／エッチング特性を変えるための磁気フィルタ装置を備えたプラズマ・システム
JP2013004679A (ja) 2011-06-15 2013-01-07 Tokyo Electron Ltd プラズマエッチング方法
JP2017216284A (ja) 2016-05-30 2017-12-07 東京エレクトロン株式会社 エッチング方法
JP2018032720A (ja) 2016-08-24 2018-03-01 東京エレクトロン株式会社 基板処理方法

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EP0777267A1 (en) * 1995-11-28 1997-06-04 Applied Materials, Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
JPH09270416A (ja) * 1996-03-29 1997-10-14 Sony Corp ドライエッチング装置およびドライエッチング方法
EP1334514A2 (en) * 2000-11-01 2003-08-13 Applied Materials, Inc. Dielectric etch chamber with expanded process window
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
JP4643916B2 (ja) * 2004-03-02 2011-03-02 株式会社アルバック 層間絶縁膜のドライエッチング方法及びその装置
JPWO2008140012A1 (ja) * 2007-05-11 2010-08-05 株式会社アルバック ドライエッチング装置及びドライエッチング方法
JP5223377B2 (ja) * 2008-02-29 2013-06-26 東京エレクトロン株式会社 プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法
JP2010027175A (ja) * 2008-07-23 2010-02-04 Showa Denko HD Singapore Pte Ltd 炭素膜の形成方法、磁気記録媒体の製造方法、及び炭素膜の形成装置
US8664126B2 (en) * 2011-06-10 2014-03-04 Applied Materials, Inc. Selective deposition of polymer films on bare silicon instead of oxide surface
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
KR20150055473A (ko) * 2013-11-13 2015-05-21 삼성전자주식회사 탄소 함유 박막의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
JP6320282B2 (ja) * 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
JP2016136606A (ja) * 2015-01-16 2016-07-28 東京エレクトロン株式会社 エッチング方法
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
JP6851217B2 (ja) * 2017-02-16 2021-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053061A (ja) 1999-08-06 2001-02-23 Hitachi Ltd ドライエッチング方法
JP2007284794A (ja) 2006-04-19 2007-11-01 Maxim Integrated Products Inc 膜の堆積／エッチング特性を変えるための磁気フィルタ装置を備えたプラズマ・システム
JP2013004679A (ja) 2011-06-15 2013-01-07 Tokyo Electron Ltd プラズマエッチング方法
JP2017216284A (ja) 2016-05-30 2017-12-07 東京エレクトロン株式会社 エッチング方法
JP2018032720A (ja) 2016-08-24 2018-03-01 東京エレクトロン株式会社 基板処理方法

Also Published As

Publication number Publication date
KR20210041072A (ko) 2021-04-14
WO2020040005A1 (ja) 2020-02-27
TW202027161A (zh) 2020-07-16
CN112567502A (zh) 2021-03-26
US20210335623A1 (en) 2021-10-28
JP2020031190A (ja) 2020-02-27
TWI811432B (zh) 2023-08-11
US11710643B2 (en) 2023-07-25
CN112567502B (zh) 2024-08-20
KR102767140B1 (ko) 2025-02-13

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