JP7105725B2 - 広範囲の動作温度を有するpecvdセラミックヒータ - Google Patents
広範囲の動作温度を有するpecvdセラミックヒータ Download PDFInfo
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- JP7105725B2 JP7105725B2 JP2019081739A JP2019081739A JP7105725B2 JP 7105725 B2 JP7105725 B2 JP 7105725B2 JP 2019081739 A JP2019081739 A JP 2019081739A JP 2019081739 A JP2019081739 A JP 2019081739A JP 7105725 B2 JP7105725 B2 JP 7105725B2
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- hollow shaft
- pedestal
- substrate support
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- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
Claims (15)
- 半導体処理チャンバのためのペデスタルであって、
基板を受け取るための支持体表面を含む基板支持体と、
前記基板支持体内部に封入された加熱素子と、
第1の端及び第2の端を有する第1の中空シャフトであって、前記第1の端が前記基板支持体に固定されており、前記基板支持体及び前記第1の中空シャフトがセラミック材料から作られ、前記第1の中空シャフトが第1の長さを有する、第1の中空シャフトと、
前記第1の中空シャフトの前記第2の端に連結された第2の中空シャフトであって、金属から作られ、前記第1の中空シャフトと前記第2の中空シャフトとの間のインターフェースに近い前記第2の中空シャフト内部に配置された冷却チャネルを有しており、前記第1の長さを約1.5倍から10倍上回る第2の長さを有する、第2の中空シャフトと、
前記第1の中空シャフト及び前記第2の中空シャフト内部に配置されたRF伝導ロッドと、
を備え、
前記冷却チャネル内の冷媒の温度又は流量の少なくとも一方は、前記基板の温度を能動的に制御するように変化させられる、
ペデスタル。 - 前記第1の中空シャフトは前記基板支持体と同一の材料から作られ、前記第1の長さは約50mmから100mmであり、前記第2の長さは前記第1の長さを約3倍から5倍上回る、請求項1に記載のペデスタル。
- 前記第1の中空シャフトは窒化アルミニウムから作られている、請求項2に記載のペデスタル。
- 前記第2の中空シャフトはアルミニウムから作られている、請求項3に記載のペデスタル。
- 前記RF伝導ロッドは中空である、請求項1に記載のペデスタル。
- 前記RF伝導ロッドは約3mmから約8mmの範囲の直径を有する、請求項5に記載のペデスタル。
- 半導体処理チャンバのためのペデスタルであって、
基板を受け取るための支持体表面を含む基板支持体と、
前記基板支持体内部に封入された加熱素子と、
前記基板支持体に固定された第1の中空シャフトであって、前記基板支持体及び前記第1の中空シャフトがセラミック材料から作られ、前記第1の中空シャフトが50mmから100mmまでの長さを有する、第1の中空シャフトと、
前記第1の中空シャフトに連結された第2の中空シャフトであって、金属から作られ、150mmから500mmまでの長さを有し、前記第1の中空シャフトと前記第2の中空シャフトとの間のインターフェースに近い前記第2の中空シャフト内部に配置された冷却チャネルを有する、第2の中空シャフトと、
前記第1の中空シャフト及び前記第2の中空シャフト内部に配置されたRFロッドと、
を備え、
前記冷却チャネル内の冷媒の温度又は流量の少なくとも一方は、前記基板の温度を能動的に制御するように変化させられる、
ペデスタル。 - 前記第1の中空シャフトは前記基板支持体と同一の材料から作られている、請求項7に記載のペデスタル。
- 前記第1の中空シャフトは窒化アルミニウムから作られている、請求項7に記載のペデスタル。
- 前記第2の中空シャフトはアルミニウムから作られている、請求項9に記載のペデスタル。
- プラズマ処理チャンバであって、
処理領域を有するチャンバ本体と、
前記処理領域に配置されたペデスタルであって、
基板を受け取るための支持体表面を含む基板支持体と、
前記基板支持体内部に封入された加熱素子と、
第1の端及び第2の端を有する第1の中空シャフトであって、前記第1の端が前記基板支持体に固定されており、前記基板支持体及び前記第1の中空シャフトがセラミック材料から作られ、前記第1の中空シャフトが約50mmから100mmまでの長さを有する、第1の中空シャフトと、
前記第1の中空シャフトの前記第2の端に連結された第2の中空シャフトであって、金属から作られ、前記第1の中空シャフトと前記第2の中空シャフトとの間のインターフェースに近い前記第2の中空シャフト内部に配置された冷却チャネルを有しており、前記第1の中空シャフトの長さを上回る長さを有する、第2の中空シャフトと、
前記第1の中空シャフト及び前記第2の中空シャフト内部に配置されたRFロッドと
を備えるペデスタルと、
前記冷却チャネル内の冷媒の温度又は流量の少なくとも一方を変化させて、前記基板の温度を能動的に制御する冷媒供給手段と、
を備えるチャンバ。 - 前記第1の中空シャフトは窒化アルミニウムから作られている、請求項11に記載のプラズマ処理チャンバ。
- 前記第2の中空シャフトはアルミニウムから作られている、請求項12に記載のプラズマ処理チャンバ。
- 前記第2の中空シャフトの長さは約150mmから約500mmの範囲である、請求項11に記載のプラズマ処理チャンバ。
- 前記RFロッドは中空であり、約3mmから約8mmの範囲の直径を有する、請求項11に記載のプラズマ処理チャンバ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/149,070 US20150194326A1 (en) | 2014-01-07 | 2014-01-07 | Pecvd ceramic heater with wide range of operating temperatures |
US14/149,070 | 2014-01-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562453A Division JP6522006B2 (ja) | 2014-01-07 | 2014-12-17 | 広範囲の動作温度を有するpecvdセラミックヒータ |
Publications (2)
Publication Number | Publication Date |
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JP2019165232A JP2019165232A (ja) | 2019-09-26 |
JP7105725B2 true JP7105725B2 (ja) | 2022-07-25 |
Family
ID=53495768
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562453A Active JP6522006B2 (ja) | 2014-01-07 | 2014-12-17 | 広範囲の動作温度を有するpecvdセラミックヒータ |
JP2019081739A Active JP7105725B2 (ja) | 2014-01-07 | 2019-04-23 | 広範囲の動作温度を有するpecvdセラミックヒータ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016562453A Active JP6522006B2 (ja) | 2014-01-07 | 2014-12-17 | 広範囲の動作温度を有するpecvdセラミックヒータ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150194326A1 (ja) |
JP (2) | JP6522006B2 (ja) |
KR (1) | KR102266374B1 (ja) |
CN (1) | CN105849866B (ja) |
TW (1) | TWI650441B (ja) |
WO (1) | WO2015105647A1 (ja) |
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KR102437125B1 (ko) * | 2014-06-27 | 2022-08-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 프로세싱을 위한 플라즈마 부식 저항성 가열기 |
US20170178758A1 (en) * | 2015-12-18 | 2017-06-22 | Applied Materials, Inc. | Uniform wafer temperature achievement in unsymmetric chamber environment |
CN108885973B (zh) * | 2016-03-25 | 2023-09-08 | 应用材料公司 | 具有强化的rf功率传输的陶瓷加热器 |
JP2017228597A (ja) * | 2016-06-20 | 2017-12-28 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 成膜装置 |
TWI671851B (zh) * | 2016-09-22 | 2019-09-11 | 美商應用材料股份有限公司 | 用於寬範圍溫度控制的加熱器基座組件 |
KR102225236B1 (ko) | 2017-03-06 | 2021-03-10 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 지지대 |
US10147610B1 (en) * | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US10704142B2 (en) * | 2017-07-27 | 2020-07-07 | Applied Materials, Inc. | Quick disconnect resistance temperature detector assembly for rotating pedestal |
CN111670491A (zh) | 2018-01-31 | 2020-09-15 | 朗姆研究公司 | 静电卡盘(esc)基座电压隔离 |
US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
JP7017967B2 (ja) * | 2018-03-28 | 2022-02-09 | 京セラ株式会社 | ヒータ及びヒータシステム |
KR20220019030A (ko) * | 2019-08-08 | 2022-02-15 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치용 부재 |
WO2021091786A1 (en) * | 2019-11-04 | 2021-05-14 | Applied Materials, Inc. | Systems and methods for substrate support temperature control |
US20220165567A1 (en) * | 2020-11-25 | 2022-05-26 | Applied Materials, Inc. | Systems and methods for deposition residue control |
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JP2005032898A (ja) | 2003-07-10 | 2005-02-03 | Ngk Insulators Ltd | セラミックサセプターの支持構造 |
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2014
- 2014-01-07 US US14/149,070 patent/US20150194326A1/en not_active Abandoned
- 2014-12-15 TW TW103143691A patent/TWI650441B/zh active
- 2014-12-17 CN CN201480070552.8A patent/CN105849866B/zh active Active
- 2014-12-17 JP JP2016562453A patent/JP6522006B2/ja active Active
- 2014-12-17 KR KR1020167020774A patent/KR102266374B1/ko active IP Right Grant
- 2014-12-17 WO PCT/US2014/070782 patent/WO2015105647A1/en active Application Filing
-
2019
- 2019-04-23 JP JP2019081739A patent/JP7105725B2/ja active Active
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JP2003133242A (ja) | 2000-12-28 | 2003-05-09 | Tokyo Electron Ltd | 基板加熱装置およびそのパージ方法 |
JP2005032898A (ja) | 2003-07-10 | 2005-02-03 | Ngk Insulators Ltd | セラミックサセプターの支持構造 |
JP2008270589A (ja) | 2007-04-23 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法およびその製造装置 |
JP2010199107A (ja) | 2009-02-23 | 2010-09-09 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置の基板支持台 |
US20130126206A1 (en) | 2011-11-22 | 2013-05-23 | Applied Materials, Inc. | Apparatus and methods for improving reliability of rf grounding |
Also Published As
Publication number | Publication date |
---|---|
KR102266374B1 (ko) | 2021-06-16 |
CN105849866A (zh) | 2016-08-10 |
JP2017511980A (ja) | 2017-04-27 |
JP6522006B2 (ja) | 2019-05-29 |
TW201527586A (zh) | 2015-07-16 |
JP2019165232A (ja) | 2019-09-26 |
KR20160105470A (ko) | 2016-09-06 |
CN105849866B (zh) | 2019-03-22 |
TWI650441B (zh) | 2019-02-11 |
WO2015105647A1 (en) | 2015-07-16 |
US20150194326A1 (en) | 2015-07-09 |
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