JP7105582B2 - 決定方法、露光方法、露光装置、物品の製造方法及びプログラム - Google Patents

決定方法、露光方法、露光装置、物品の製造方法及びプログラム Download PDF

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JP7105582B2
JP7105582B2 JP2018043490A JP2018043490A JP7105582B2 JP 7105582 B2 JP7105582 B2 JP 7105582B2 JP 2018043490 A JP2018043490 A JP 2018043490A JP 2018043490 A JP2018043490 A JP 2018043490A JP 7105582 B2 JP7105582 B2 JP 7105582B2
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Japan
Prior art keywords
focus position
level
optical system
determining
projection optical
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JP2018043490A
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Japanese (ja)
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JP2019159029A (ja
JP2019159029A5 (enExample
Inventor
伸彦 籔
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2018043490A priority Critical patent/JP7105582B2/ja
Priority to TW108104887A priority patent/TWI722386B/zh
Priority to KR1020190023746A priority patent/KR102493922B1/ko
Priority to CN201910161927.6A priority patent/CN110244518B/zh
Publication of JP2019159029A publication Critical patent/JP2019159029A/ja
Publication of JP2019159029A5 publication Critical patent/JP2019159029A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018043490A 2018-03-09 2018-03-09 決定方法、露光方法、露光装置、物品の製造方法及びプログラム Active JP7105582B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018043490A JP7105582B2 (ja) 2018-03-09 2018-03-09 決定方法、露光方法、露光装置、物品の製造方法及びプログラム
TW108104887A TWI722386B (zh) 2018-03-09 2019-02-14 決定方法、曝光方法、曝光裝置、物品的製造方法及記憶媒體
KR1020190023746A KR102493922B1 (ko) 2018-03-09 2019-02-28 결정 방법, 노광 방법, 노광 장치, 물품의 제조 방법 및 컴퓨터 프로그램
CN201910161927.6A CN110244518B (zh) 2018-03-09 2019-03-05 决定方法、曝光方法、装置、物品的制造方法及存储介质

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018043490A JP7105582B2 (ja) 2018-03-09 2018-03-09 決定方法、露光方法、露光装置、物品の製造方法及びプログラム

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JP2019159029A JP2019159029A (ja) 2019-09-19
JP2019159029A5 JP2019159029A5 (enExample) 2021-04-22
JP7105582B2 true JP7105582B2 (ja) 2022-07-25

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JP (1) JP7105582B2 (enExample)
KR (1) KR102493922B1 (enExample)
CN (1) CN110244518B (enExample)
TW (1) TWI722386B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11781214B2 (en) 2019-07-30 2023-10-10 Applied Materials, Inc. Differential capacitive sensors for in-situ film thickness and dielectric constant measurement
JP2022097352A (ja) * 2021-05-17 2022-06-30 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法

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JP2002260986A (ja) 2001-03-02 2002-09-13 Nikon Corp 光学特性計測方法、露光方法及びデバイス製造方法
JP2003086498A (ja) 2001-09-13 2003-03-20 Canon Inc 焦点位置検出方法及び焦点位置検出装置
US20030170552A1 (en) 2000-10-05 2003-09-11 Nikon Corporation Method of determining exposure conditions, exposure method, device manufacturing method, and storage medium

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JP3265668B2 (ja) * 1993-01-13 2002-03-11 株式会社ニコン ベストフォーカス位置の算出方法
JP3303436B2 (ja) * 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
JPH07326563A (ja) * 1994-06-01 1995-12-12 Hitachi Ltd 露光条件評価用パターンとそれを使用する露光条件評価方法および装置
JPH0982620A (ja) * 1995-09-20 1997-03-28 Nikon Corp ベストフォーカス位置の検出方法
KR20050088238A (ko) * 2002-12-30 2005-09-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 최선 공정 변수와 최적 공정 윈도우 결정 방법과 컴퓨터프로그램 및 이를 이용한 리소그래피 공정, 디바이스,리소그래피 마스크
JP4177722B2 (ja) * 2003-07-02 2008-11-05 株式会社東芝 パターン補正方法、パターン補正システム、マスク製造方法、半導体装置製造方法、及びパターン補正プログラム
JP4873242B2 (ja) 2004-06-22 2012-02-08 株式会社ニコン ベストフォーカス検出方法及び露光方法、並びに露光装置
TWI396225B (zh) * 2004-07-23 2013-05-11 尼康股份有限公司 成像面測量方法、曝光方法、元件製造方法以及曝光裝置
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US20030170552A1 (en) 2000-10-05 2003-09-11 Nikon Corporation Method of determining exposure conditions, exposure method, device manufacturing method, and storage medium
JP2002260986A (ja) 2001-03-02 2002-09-13 Nikon Corp 光学特性計測方法、露光方法及びデバイス製造方法
JP2003086498A (ja) 2001-09-13 2003-03-20 Canon Inc 焦点位置検出方法及び焦点位置検出装置

Also Published As

Publication number Publication date
TWI722386B (zh) 2021-03-21
CN110244518A (zh) 2019-09-17
KR20190106711A (ko) 2019-09-18
KR102493922B1 (ko) 2023-02-01
JP2019159029A (ja) 2019-09-19
CN110244518B (zh) 2021-07-23
TW201939325A (zh) 2019-10-01

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