JP7097466B2 - プロセス誘起逸脱特性評価 - Google Patents

プロセス誘起逸脱特性評価 Download PDF

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JP7097466B2
JP7097466B2 JP2020571333A JP2020571333A JP7097466B2 JP 7097466 B2 JP7097466 B2 JP 7097466B2 JP 2020571333 A JP2020571333 A JP 2020571333A JP 2020571333 A JP2020571333 A JP 2020571333A JP 7097466 B2 JP7097466 B2 JP 7097466B2
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Prior art keywords
dies
die
map
deviation
semiconductor wafer
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Japanese (ja)
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JP2021515993A (ja
JP2021515993A5 (enExample
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ヘレン リウ
アヤ アルバート アウン
グオチン ジャン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G01N2021/8864—Mapping zones of defects

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Glass Compositions (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020571333A 2018-03-10 2019-03-08 プロセス誘起逸脱特性評価 Active JP7097466B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862641297P 2018-03-10 2018-03-10
US62/641,297 2018-03-10
US16/273,876 2019-02-12
US16/273,876 US10585049B2 (en) 2018-03-10 2019-02-12 Process-induced excursion characterization
PCT/US2019/021389 WO2019177895A1 (en) 2018-03-10 2019-03-08 Process-induced excursion characterization

Publications (3)

Publication Number Publication Date
JP2021515993A JP2021515993A (ja) 2021-06-24
JP2021515993A5 JP2021515993A5 (enExample) 2022-03-10
JP7097466B2 true JP7097466B2 (ja) 2022-07-07

Family

ID=67843829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020571333A Active JP7097466B2 (ja) 2018-03-10 2019-03-08 プロセス誘起逸脱特性評価

Country Status (8)

Country Link
US (1) US10585049B2 (enExample)
JP (1) JP7097466B2 (enExample)
KR (1) KR102443351B1 (enExample)
CN (1) CN111937129B (enExample)
IL (1) IL277250B2 (enExample)
SG (1) SG11202008760WA (enExample)
TW (1) TWI797271B (enExample)
WO (1) WO2019177895A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656274B2 (en) * 2021-02-15 2023-05-23 Kla Corporation Systems and methods for evaluating the reliability of semiconductor die packages
US12431393B2 (en) 2021-10-26 2025-09-30 Nanya Technology Corporation Manufacturing method for semiconductor structures
US12191215B2 (en) * 2021-10-22 2025-01-07 Nanya Technology Corporation Manufacturing and measuring system for semiconductor structures

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009516832A (ja) 2005-11-18 2009-04-23 ケーエルエー−テンカー テクノロジィース コーポレイション 検査データと組み合わせて設計データを使用するための方法及びシステム
US20100057391A1 (en) 2008-08-29 2010-03-04 St Pierre Eric R Classification of spatial patterns on wafer maps
US20100067781A1 (en) 2003-11-19 2010-03-18 Kla-Tencor Corporation Process Excursion Detection
US20150234000A1 (en) 2014-02-14 2015-08-20 Texas Instruments Incorporated Real Time Semiconductor Process Excursion Monitor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698075B2 (ja) * 2001-06-20 2005-09-21 株式会社日立製作所 半導体基板の検査方法およびその装置
US6885977B2 (en) 2002-12-20 2005-04-26 Applied Materials, Inc. System to identify a wafer manufacturing problem and method therefor
JP3896996B2 (ja) * 2003-06-27 2007-03-22 株式会社日立製作所 回路パターンの検査装置および検査方法
KR100909474B1 (ko) * 2005-08-10 2009-07-28 삼성전자주식회사 웨이퍼 결함지수를 사용하여 국부성 불량 모드를 갖는결함성 반도체 웨이퍼의 검출 방법들 및 이에 사용되는장비들
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP2009526240A (ja) 2006-02-09 2009-07-16 ケーエルエー−テンカー テクノロジィース コーポレイション ウエハの特性決定のための方法とシステム
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
WO2010090914A2 (en) * 2009-02-03 2010-08-12 Qcept Technologies, Inc. Patterned wafer inspection system using a non-vibrating contact potential difference sensor
US10192303B2 (en) * 2012-11-12 2019-01-29 Kla Tencor Corporation Method and system for mixed mode wafer inspection
JP6421237B2 (ja) * 2014-08-29 2018-11-07 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジー方法、ターゲット、及び基板
CN107004616B (zh) * 2014-11-19 2022-03-04 美国德卡科技公司 对单元特定的图案化的自动光学检测
US10747830B2 (en) * 2014-11-21 2020-08-18 Mesh Labs Inc. Method and system for displaying electronic information
US9779202B2 (en) * 2015-06-22 2017-10-03 Kla-Tencor Corporation Process-induced asymmetry detection, quantification, and control using patterned wafer geometry measurements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100067781A1 (en) 2003-11-19 2010-03-18 Kla-Tencor Corporation Process Excursion Detection
JP2009516832A (ja) 2005-11-18 2009-04-23 ケーエルエー−テンカー テクノロジィース コーポレイション 検査データと組み合わせて設計データを使用するための方法及びシステム
US20100057391A1 (en) 2008-08-29 2010-03-04 St Pierre Eric R Classification of spatial patterns on wafer maps
US20150234000A1 (en) 2014-02-14 2015-08-20 Texas Instruments Incorporated Real Time Semiconductor Process Excursion Monitor

Also Published As

Publication number Publication date
IL277250B2 (en) 2023-02-01
JP2021515993A (ja) 2021-06-24
SG11202008760WA (en) 2020-10-29
TW201940892A (zh) 2019-10-16
WO2019177895A1 (en) 2019-09-19
TWI797271B (zh) 2023-04-01
CN111937129A (zh) 2020-11-13
US20190277777A1 (en) 2019-09-12
KR102443351B1 (ko) 2022-09-14
IL277250B (en) 2022-10-01
IL277250A (en) 2020-10-29
US10585049B2 (en) 2020-03-10
KR20200120748A (ko) 2020-10-21
CN111937129B (zh) 2022-04-29

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