JP7077108B2 - 被加工物の処理方法 - Google Patents

被加工物の処理方法 Download PDF

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Publication number
JP7077108B2
JP7077108B2 JP2018073189A JP2018073189A JP7077108B2 JP 7077108 B2 JP7077108 B2 JP 7077108B2 JP 2018073189 A JP2018073189 A JP 2018073189A JP 2018073189 A JP2018073189 A JP 2018073189A JP 7077108 B2 JP7077108 B2 JP 7077108B2
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film
ruthenium
workpiece
gas
target
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Japanese (ja)
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JP2019186322A (ja
JP2019186322A5 (https=
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優 長友
隆彦 加藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018073189A priority Critical patent/JP7077108B2/ja
Priority to TW108111465A priority patent/TWI781309B/zh
Priority to US16/375,071 priority patent/US11049730B2/en
Priority to KR1020190039570A priority patent/KR102481741B1/ko
Publication of JP2019186322A publication Critical patent/JP2019186322A/ja
Publication of JP2019186322A5 publication Critical patent/JP2019186322A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018073189A 2018-04-05 2018-04-05 被加工物の処理方法 Active JP7077108B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018073189A JP7077108B2 (ja) 2018-04-05 2018-04-05 被加工物の処理方法
TW108111465A TWI781309B (zh) 2018-04-05 2019-04-01 被加工物之處理方法
US16/375,071 US11049730B2 (en) 2018-04-05 2019-04-04 Workpiece processing method
KR1020190039570A KR102481741B1 (ko) 2018-04-05 2019-04-04 피가공물의 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018073189A JP7077108B2 (ja) 2018-04-05 2018-04-05 被加工物の処理方法

Publications (3)

Publication Number Publication Date
JP2019186322A JP2019186322A (ja) 2019-10-24
JP2019186322A5 JP2019186322A5 (https=) 2021-03-18
JP7077108B2 true JP7077108B2 (ja) 2022-05-30

Family

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JP2018073189A Active JP7077108B2 (ja) 2018-04-05 2018-04-05 被加工物の処理方法

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US (1) US11049730B2 (https=)
JP (1) JP7077108B2 (https=)
KR (1) KR102481741B1 (https=)
TW (1) TWI781309B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019169627A (ja) * 2018-03-23 2019-10-03 東京エレクトロン株式会社 エッチング方法
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US11322364B2 (en) 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness
JP7634642B2 (ja) 2020-07-19 2025-02-21 アプライド マテリアルズ インコーポレイテッド ホウ素がドープされたシリコン材料を利用した集積プロセス
US20220254683A1 (en) * 2021-02-05 2022-08-11 Tokyo Electron Limited Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formation
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
US11749532B2 (en) * 2021-05-04 2023-09-05 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN117529798A (zh) 2021-06-03 2024-02-06 应用材料公司 金属特征的原子层蚀刻
JP7099675B1 (ja) * 2021-07-27 2022-07-12 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
KR20240113753A (ko) * 2021-12-08 2024-07-23 도쿄엘렉트론가부시키가이샤 몰리브덴 에칭 방법
US20230420267A1 (en) * 2022-05-27 2023-12-28 Tokyo Electron Limited Oxygen-free etching of non-volatile metals
KR102700925B1 (ko) * 2022-06-15 2024-09-02 주식회사 히타치하이테크 플라스마 처리 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284317A (ja) 2000-03-29 2001-10-12 Hitachi Ltd 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法
JP2003027240A (ja) 2001-07-23 2003-01-29 Hitachi Ltd 半導体製造装置及びそのクリーニング方法
JP2007305892A (ja) 2006-05-15 2007-11-22 Fujitsu Ltd 金属膜のエッチング方法及び半導体装置の製造方法
JP2008532324A (ja) 2005-03-03 2008-08-14 アプライド マテリアルズ インコーポレイテッド 制御された処理結果分布を有するエッチング方法
JP2012019242A (ja) 2003-08-26 2012-01-26 Lam Res Corp フィーチャ微小寸法の低減
JP2016131238A (ja) 2015-01-12 2016-07-21 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 原子スケールのａｌｄ（原子層堆積）プロセスとａｌｅ（原子層エッチング）プロセスとの統合
JP2017076784A (ja) 2015-10-09 2017-04-20 エーエスエム アイピー ホールディング ビー．ブイ． 有機膜の気相堆積
JP2017212331A (ja) 2016-05-25 2017-11-30 東京エレクトロン株式会社 被処理体を処理する方法

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JPH05275402A (ja) * 1992-03-27 1993-10-22 Hitachi Ltd 固体表面加工方法
JP2956485B2 (ja) 1994-09-07 1999-10-04 日本電気株式会社 半導体装置の製造方法
JPH11111683A (ja) * 1997-09-30 1999-04-23 Sony Corp 半導体装置の製造方法
US6528363B2 (en) * 2001-03-19 2003-03-04 International Business Machines Corporation Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch
US9293319B2 (en) * 2011-03-09 2016-03-22 Micron Technology, Inc. Removal of metal
US9852923B2 (en) * 2015-04-02 2017-12-26 Applied Materials, Inc. Mask etch for patterning
US10361282B2 (en) * 2017-05-08 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a low-K spacer
JP7277871B2 (ja) * 2017-10-04 2023-05-19 東京エレクトロン株式会社 相互接続のためのルテニウム金属機能フィリング

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284317A (ja) 2000-03-29 2001-10-12 Hitachi Ltd 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法
JP2003027240A (ja) 2001-07-23 2003-01-29 Hitachi Ltd 半導体製造装置及びそのクリーニング方法
JP2012019242A (ja) 2003-08-26 2012-01-26 Lam Res Corp フィーチャ微小寸法の低減
JP2008532324A (ja) 2005-03-03 2008-08-14 アプライド マテリアルズ インコーポレイテッド 制御された処理結果分布を有するエッチング方法
JP2007305892A (ja) 2006-05-15 2007-11-22 Fujitsu Ltd 金属膜のエッチング方法及び半導体装置の製造方法
JP2016131238A (ja) 2015-01-12 2016-07-21 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 原子スケールのａｌｄ（原子層堆積）プロセスとａｌｅ（原子層エッチング）プロセスとの統合
JP2017076784A (ja) 2015-10-09 2017-04-20 エーエスエム アイピー ホールディング ビー．ブイ． 有機膜の気相堆積
JP2017212331A (ja) 2016-05-25 2017-11-30 東京エレクトロン株式会社 被処理体を処理する方法

Also Published As

Publication number Publication date
KR20190116933A (ko) 2019-10-15
KR102481741B1 (ko) 2022-12-26
JP2019186322A (ja) 2019-10-24
TWI781309B (zh) 2022-10-21
US11049730B2 (en) 2021-06-29
TW202004896A (zh) 2020-01-16
US20190311915A1 (en) 2019-10-10

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