JP7073341B2 - 光起電装置及び光起電装置の製造方法 - Google Patents
光起電装置及び光起電装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 255
- 230000001681 protective effect Effects 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 16
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 229910003437 indium oxide Inorganic materials 0.000 claims description 11
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 230000004075 alteration Effects 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- -1 diborane Chemical compound 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 370
- 239000007789 gas Substances 0.000 description 13
- 239000000470 constituent Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007774 longterm Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
- 229910052986 germanium hydride Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L31/0216—Coatings
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Description
図1は、本実施形態に係る光起電装置100の裏面側を示す平面図である。
以下、本実施形態に係る光起電装置100の製造方法について、図2から図8を用いて説明する。図2から図8は、図1のII‐II線における断面を示す断面図である。図2から図8においては光起電装置100における受光面側が下方に表示されており、裏面側が上方に表示されている。
まず図3に示すように、半導体基板10を準備する。半導体基板10としては、例えば、単結晶シリコン基板を用いることができる。単結晶シリコン基板としては、n型単結晶シリコン基板とp型単結晶シリコン基板を用いることができるが、結晶基板内のキャリア寿命の長さから、n型単結晶シリコン基板を用いることが好ましい。即ち、p型単結晶シリコンにおいては、光照射によってp型ドーパントであるB(ホウ素)が影響して再結合中心となるLID(Light Induced Degradation)が起こる場合があるが、半導体基板10としてn型単結晶シリコン基板を用いることにより、LIDの発生を抑制することができる。
次に、図3に示すように、半導体基板10の裏面に、例えばプラズマCVD法により第1の真性半導体膜60を形成する。第1の真性半導体膜60は、後述する第1導電型半導体膜形成ステップにおいて形成する第1導電型半導体膜20を形成する領域と同じ領域に形成する。
次に、図4に示すように、第1の真性半導体膜60の裏面に、例えばプラズマCVD法により第1導電型半導体膜20を形成する。第1導電型半導体膜20は、第1の真性半導体膜60と平面視においてその略全体が重なるように形成する。第2導電型半導体膜30は、p型半導体膜でもよくn型半導体膜でもよいが、本実施形態においては、第1導電型半導体膜20を、p型半導体膜によって構成する例を説明する。
次に、図5に示すように、半導体基板10の裏面における、第1の真性半導体膜60を形成していない領域に、例えばプラズマCVD法を用いて、第2の真性半導体膜70を形成する。即ち、第2の真性半導体膜70は、平面視において少なくともその一部が、第1導電型半導体膜20と異なる位置に形成する。
次に、図6に示すように、第2の真性半導体膜70の裏面に、例えばプラズマCVD法により第2導電型半導体膜30を形成する。第2導電型半導体膜30は、第2の真性半導体膜70と平面視においてその略全体が重なるように形成する。第2導電型半導体膜30は、平面視において少なくともその一部が、第1導電型半導体膜20と異なる位置に配置される。
次に、図7に示すように、第1導電型半導体膜20及び第2導電型半導体膜30の裏面にスパッタ法や、MOCVD法等によって保護膜40を形成する。保護膜40の構成材料としては、酸化インジウム、酸化亜鉛、酸化錫、酸化チタン、及びそれらの複合酸化物等の透明導電性金属酸化物を用いる。上述した構成材料の中でも、高い導電率と透明性の観点からは、酸化インジウムを主成分とするインジウム系複合酸化物を保護膜40として用いることが好ましい。また、信頼性やより高い導電率を確保する為に、酸化インジウムにドーパントを添加して用いることが更に好ましい。ドーパントとして用いる不純物としては、Sn、W、Ce、Zn、As、Al、Si、S、Ti等が挙げられる。
次に図8に示すように、導電性を有する保護膜40の裏面側に、第1導電型用電極膜50Aを形成する。第1導電型用電極膜50Aは、透明導電膜からなる保護膜40を介して第1導電型半導体膜20と電気的に接続される。
次に、図2に示すように、保護膜40の一部に、第1導電型半導体膜20の裏面と第2導電型半導体膜30の裏面との導通を阻害する非導電性の変質部40Aを形成する。本実施形態においては、変質部40Aの形成領域としては、少なくとも第1導電型半導体膜20の裏面と第2導電型半導体膜30の裏面との導電経路において形成する。
Claims (5)
- 半導体基板の裏面側に、第1導電型半導体膜を形成する第1導電型半導体膜形成ステップと、
前記半導体基板の裏面側に、少なくとも一部が前記第1導電型半導体膜と平面視で異なる位置に配置される第2導電型半導体膜を形成する第2導電型半導体膜形成ステップと、
前記第1導電型半導体膜及び前記第2導電型半導体膜の裏面側に導電性を有する保護膜を形成する保護膜形成ステップと、
前記保護膜の裏面側に電極膜を形成する電極膜形成ステップと、
メタン、ジボラン、シラン又はホスフィンを0.01%~3%添加した水素雰囲気中においてプラズマ処理を行うことにより、前記第1導電型半導体膜の裏面と前記第2導電型半導体膜の裏面との導電経路において、前記保護膜に非導電性の変質部を形成する変質部形成ステップと、
を含む、光起電装置の製造方法。 - 前記変質部形成ステップにおいて、前記電極膜をマスクとして用い、前記保護膜における前記電極膜との接続部においては変質部を形成させない、
請求項1に記載の光起電装置の製造方法。 - 前記保護膜形成ステップにおいて、前記保護膜は、酸化インジウム、酸化亜鉛、酸化錫、酸化チタンの内の少なくとも一つを用いて形成される、
請求項1又は2に記載の光起電装置の製造方法。 - 前記電極膜形成ステップにおいて、前記電極膜は、銅又は銀を用いて形成される、
請求項1乃至3のいずれか一つに記載の光起電装置の製造方法。 - 前記電極膜形成ステップにおいて、前記電極膜は、電解めっき法により銅を材料として形成される、
請求項4に記載の光起電装置の製造方法。
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Citations (6)
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JP2010062084A (ja) | 2008-09-05 | 2010-03-18 | Hitachi Plasma Display Ltd | プラズマディスプレイパネル及びその製造方法 |
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WO2013073045A1 (ja) | 2011-11-18 | 2013-05-23 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
JP2013239476A (ja) | 2012-05-11 | 2013-11-28 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法、光起電力モジュール |
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