JP2019033298A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
- Publication number
- JP2019033298A JP2019033298A JP2018221902A JP2018221902A JP2019033298A JP 2019033298 A JP2019033298 A JP 2019033298A JP 2018221902 A JP2018221902 A JP 2018221902A JP 2018221902 A JP2018221902 A JP 2018221902A JP 2019033298 A JP2019033298 A JP 2019033298A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- silicon substrate
- crystalline silicon
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 80
- 238000002161 passivation Methods 0.000 claims abstract description 56
- 239000002019 doping agent Substances 0.000 claims abstract description 52
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 42
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 230000006798 recombination Effects 0.000 abstract description 19
- 238000005215 recombination Methods 0.000 abstract description 19
- 239000000969 carrier Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 193
- 239000004065 semiconductor Substances 0.000 description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】実施形態の一例である太陽電池10は、n型結晶性シリコン基板11と、当該基板の受光面上に形成された、キャリア生成機能を有するパッシベーション層20とを備える。n型結晶性シリコン基板11は、パッシベーション層20との界面近傍に当該基板と同一導電型にドーピングされた、ドーパント濃度が1×1017cm-3以上であるドープ層を有する。ドープ層におけるドーパント濃度の平均値は1×1017cm-3〜1×1020cm-3であり、ドープ層の厚みは200nm以下である。
【選択図】図1
Description
実施形態の説明で参照する図面は、模式的に記載されたものであり、図面に描画された構成要素の寸法比率などは現物と異なる場合がある。具体的な寸法比率等は、以下の説明を参酌して判断されるべきである。本明細書において「略**」との記載は、略全域を例に挙げて説明すると、全域はもとより実質的に全域と認められる場合を含む意図である。
図1に示すように、太陽電池10は、n型結晶性シリコン基板11と、当該基板の受光面上に形成されたパッシベーション層20とを備える。パッシベーション層20は、n型結晶性シリコン基板11の受光面における光生成キャリアの再結合を抑制するパッシベーション機能に加えてキャリア生成機能を有する光発電層である。太陽電池10は、n型結晶性シリコン基板11の裏面上に形成されたp型半導体層12及びn型半導体層13を備える。詳しくは後述するが、p型半導体層12とn型半導体層13は一部が互いに重なっており、各層の間には絶縁層14が設けられている。
(1)i型a-Si:H
(2)n型a-Si:H
(3)i型水素化非晶質炭化シリコン(i型a-SiC:H)
(4)n型a-SiC:H
(5)i型若しくはn型a-Si:Hと高濃度のn型a-Si:Hとの積層体(i型若しくはn型a-Si:H/高濃度のn型a-Si:Hの積層体)
(6)i型若しくはn型a-Si:H/高濃度のn型水素化微結晶シリコン(n型μc-Si:H)の積層体
(7)i型若しくはn型a-SiC:H/高濃度のn型a-Si:Hの積層体
(8)i型若しくはn型a-SiC:H/高濃度のn型μc-Si:Hの積層体
ここで、「高濃度」とは「n型a-Si:H/高濃度のn型a-Si:Hの積層体」を例に挙げて説明すると、前者に比べて後の後者のドーパント濃度が高いことを意味する。即ち、当該記載はドーパント量が異なる2つの層を積層した構造であることを意味する。
図4に示すように、太陽電池30は、n型結晶性シリコン基板31と、当該基板の受光面上に形成されたキャリア生成機能を有するパッシベーション層40とを備える点で、太陽電池10と共通する。n型結晶性シリコン基板31は、太陽電池10の場合と同様に、n型単結晶シリコン基板であることが好ましく、パッシベーション層40との界面近傍にn型にドーピングされたn+層41を有する。一方、太陽電池30は、n型結晶性シリコン基板11の受光面側に形成された受光面電極と、n型結晶性シリコン基板11の裏面側に形成された裏面電極とを備える点で、電極が裏面側のみに形成された太陽電池10と異なる。
Claims (9)
- 結晶性シリコン基板と、
前記結晶性シリコン基板における光が主に入射する受光面側とは反対側の面上に形成された、キャリア生成機能を有するパッシベーション層と、
を備え、
前記結晶性シリコン基板は、前記パッシベーション層との界面近傍に当該基板と同一導電型にドーピングされた、ドーパント濃度が1×1017cm-3以上であるドープ層を有し、
前記ドープ層におけるドーパント濃度の平均値は1×1017cm-3〜1×1020cm-3であり、前記ドープ層の厚みは10nm〜100nmである、太陽電池。 - 前記結晶性シリコン基板は、n型結晶性シリコン基板であり、
前記ドープ層は、前記n型結晶性シリコン基板の表面がn型にドーピングされたn+層である、請求項1に記載の太陽電池。 - 前記結晶性シリコン基板の裏面側に形成された一対の電極を備える、請求項1又は2に記載の太陽電池。
- 前記結晶性シリコン基板の受光面側に形成された受光面電極と、
前記結晶性シリコン基板の裏面側に形成された裏面電極と、
を備える、請求項1〜3のいずれか1項に記載の太陽電池。 - 前記パッシベーション層の主成分が、非晶質若しくは微結晶のシリコン、又は炭化シリコンである、請求項1〜4のいずれか1項に記載の太陽電池。
- 前記パッシベーション層は、前記結晶性シリコン基板と同じ導電型を付与する元素を含む、請求項5に記載の太陽電池。
- 前記パッシベーション層は、i型a-Si:H、n型a-Si:H、i型a-SiC:H、n型a-SiC:H、i型若しくはn型a-Si:H/高濃度のn型a-Si:Hの積層体、i型若しくはn型a-Si:H/高濃度のn型μc-Si:Hの積層体、i型若しくはn型a-SiC:H/高濃度のn型a-Si:Hの積層体、又はi型若しくはn型a-SiC:H/高濃度のn型μc-Si:Hの積層体のうちのいずれかの層を含む、請求項5に記載の太陽電池。
- 前記パッシベーション層は、i型若しくはn型a-Si:H/高濃度のn型a-Si:Hの積層体、i型若しくはn型a-Si:H/高濃度のn型μc-Si:Hの積層体、i型若しくはn型a-SiC:H/高濃度のn型a-Si:Hの積層体、又はi型若しくはn型a-SiC:H/高濃度のn型μc-Si:Hの積層体からなる層である、請求項4に記載の太陽電池。
- 前記裏面電極は、透明導電層を有し、
前記パッシベーション層は、前記透明導電層との接触面が前記n型μc-Si:Hから構成される、請求項8に記載の太陽電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015109839 | 2015-05-29 | ||
JP2015109839 | 2015-05-29 | ||
JP2017521667A JP6452011B2 (ja) | 2015-05-29 | 2016-05-09 | 太陽電池 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017521667A Division JP6452011B2 (ja) | 2015-05-29 | 2016-05-09 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019033298A true JP2019033298A (ja) | 2019-02-28 |
JP6893331B2 JP6893331B2 (ja) | 2021-06-23 |
Family
ID=57440807
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017521667A Active JP6452011B2 (ja) | 2015-05-29 | 2016-05-09 | 太陽電池 |
JP2018221902A Active JP6893331B2 (ja) | 2015-05-29 | 2018-11-28 | 太陽電池 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017521667A Active JP6452011B2 (ja) | 2015-05-29 | 2016-05-09 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20180076340A1 (ja) |
JP (2) | JP6452011B2 (ja) |
CN (1) | CN107735866B (ja) |
WO (1) | WO2016194301A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11302829B2 (en) | 2017-03-29 | 2022-04-12 | Kaneka Corporation | Photovoltaic device and method for manufacturing photovoltaic device |
JP6792053B2 (ja) * | 2017-03-31 | 2020-11-25 | パナソニック株式会社 | 太陽電池セル |
JP7346050B2 (ja) | 2019-03-26 | 2023-09-19 | パナソニックホールディングス株式会社 | 太陽電池セルおよび太陽電池モジュール |
JP2021044384A (ja) * | 2019-09-11 | 2021-03-18 | パナソニック株式会社 | 太陽電池セル |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
WO2011002086A1 (ja) * | 2009-07-03 | 2011-01-06 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法 |
US20130112253A1 (en) * | 2011-11-08 | 2013-05-09 | Min-Seok Oh | Solar cell |
US20130171767A1 (en) * | 2009-05-05 | 2013-07-04 | Solexel, Inc. | Ion implantation and annealing for high efficiency back-contact back-junction solar cells |
JP2014041968A (ja) * | 2012-08-23 | 2014-03-06 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法 |
JP2014093418A (ja) * | 2012-11-02 | 2014-05-19 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法、光起電力モジュール |
US20140224307A1 (en) * | 2013-02-08 | 2014-08-14 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device |
WO2015060437A1 (ja) * | 2013-10-25 | 2015-04-30 | シャープ株式会社 | 光電変換素子、光電変換モジュール、並びに、太陽光発電システム |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5467778A (en) * | 1977-11-10 | 1979-05-31 | Toshiba Corp | Production of semiconductor device |
JPH11312814A (ja) * | 1998-04-28 | 1999-11-09 | Toyota Motor Corp | 太陽電池素子 |
JP2004214442A (ja) * | 2003-01-06 | 2004-07-29 | Sanyo Electric Co Ltd | 光起電力装置およびその製造方法 |
US20080173347A1 (en) * | 2007-01-23 | 2008-07-24 | General Electric Company | Method And Apparatus For A Semiconductor Structure |
CN102197497A (zh) * | 2008-10-23 | 2011-09-21 | 应用材料公司 | 半导体组件制造方法、半导体组件及半导体组件制造设备 |
JP5174635B2 (ja) * | 2008-11-28 | 2013-04-03 | 京セラ株式会社 | 太陽電池素子 |
US20130167915A1 (en) * | 2009-12-09 | 2013-07-04 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers |
JP5484950B2 (ja) * | 2010-02-23 | 2014-05-07 | 三洋電機株式会社 | 太陽電池 |
US9076909B2 (en) * | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
US20120312361A1 (en) * | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Emitter structure and fabrication method for silicon heterojunction solar cell |
KR101925928B1 (ko) * | 2013-01-21 | 2018-12-06 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
JP2015026666A (ja) * | 2013-07-25 | 2015-02-05 | 日立化成株式会社 | 両面受光型太陽電池素子、その製造方法及び両面受光型太陽電池モジュール |
US9105769B2 (en) * | 2013-09-12 | 2015-08-11 | International Business Machines Corporation | Shallow junction photovoltaic devices |
-
2016
- 2016-05-09 JP JP2017521667A patent/JP6452011B2/ja active Active
- 2016-05-09 CN CN201680031268.9A patent/CN107735866B/zh active Active
- 2016-05-09 WO PCT/JP2016/002267 patent/WO2016194301A1/ja active Application Filing
-
2017
- 2017-11-20 US US15/817,551 patent/US20180076340A1/en not_active Abandoned
-
2018
- 2018-11-28 JP JP2018221902A patent/JP6893331B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
US20130171767A1 (en) * | 2009-05-05 | 2013-07-04 | Solexel, Inc. | Ion implantation and annealing for high efficiency back-contact back-junction solar cells |
WO2011002086A1 (ja) * | 2009-07-03 | 2011-01-06 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法 |
US20130112253A1 (en) * | 2011-11-08 | 2013-05-09 | Min-Seok Oh | Solar cell |
JP2014041968A (ja) * | 2012-08-23 | 2014-03-06 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法 |
JP2014093418A (ja) * | 2012-11-02 | 2014-05-19 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法、光起電力モジュール |
US20140224307A1 (en) * | 2013-02-08 | 2014-08-14 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device |
WO2015060437A1 (ja) * | 2013-10-25 | 2015-04-30 | シャープ株式会社 | 光電変換素子、光電変換モジュール、並びに、太陽光発電システム |
Also Published As
Publication number | Publication date |
---|---|
CN107735866A (zh) | 2018-02-23 |
JP6893331B2 (ja) | 2021-06-23 |
JP6452011B2 (ja) | 2019-01-16 |
WO2016194301A1 (ja) | 2016-12-08 |
CN107735866B (zh) | 2021-05-14 |
JPWO2016194301A1 (ja) | 2018-03-01 |
US20180076340A1 (en) | 2018-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
JP5461028B2 (ja) | 太陽電池 | |
US20130298973A1 (en) | Tunneling-junction solar cell with shallow counter doping layer in the substrate | |
JP6893331B2 (ja) | 太陽電池 | |
JP5538360B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP5705968B2 (ja) | 光電変換装置及びその製造方法 | |
US20140283902A1 (en) | Back junction solar cell with tunnel oxide | |
EP3297038B1 (en) | Solar cell | |
JP2013239694A (ja) | トンネル酸化物を有する後面接合太陽電池 | |
JPWO2012132729A1 (ja) | 光電変換装置及びその製造方法 | |
JP3205613U (ja) | ヘテロ接合太陽電池構造 | |
JP2014007382A (ja) | 太陽電池 | |
TWI424582B (zh) | 太陽能電池的製造方法 | |
JP5927027B2 (ja) | 光電変換装置 | |
WO2013179529A1 (ja) | 太陽電池 | |
JPWO2012132766A1 (ja) | 光電変換装置及び光電変換装置の製造方法 | |
JP6706779B2 (ja) | 太陽電池および太陽電池モジュール | |
US20180287003A1 (en) | Solar cell and method of manufacturing solar cell | |
JP6312060B2 (ja) | 太陽電池 | |
JP5645734B2 (ja) | 太陽電池素子 | |
KR20130061346A (ko) | 태양전지 및 그 제조방법 | |
JPWO2017163506A1 (ja) | 太陽電池セル | |
JP5971499B2 (ja) | 太陽電池及びその製造方法 | |
TWI581447B (zh) | 異質接面太陽能電池結構及其製作方法 | |
WO2014016932A1 (ja) | 太陽電池の製造方法及び太陽電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181128 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200625 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20201104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210129 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20210129 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20210209 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20210216 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210511 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210517 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6893331 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |