JP7042039B2 - 高アスペクト構造からのデブリ除去 - Google Patents

高アスペクト構造からのデブリ除去 Download PDF

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Publication number
JP7042039B2
JP7042039B2 JP2017100801A JP2017100801A JP7042039B2 JP 7042039 B2 JP7042039 B2 JP 7042039B2 JP 2017100801 A JP2017100801 A JP 2017100801A JP 2017100801 A JP2017100801 A JP 2017100801A JP 7042039 B2 JP7042039 B2 JP 7042039B2
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chip
irradiation
recovery
spm
measurement system
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JP2017100801A
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Japanese (ja)
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JP2017207755A (ja
JP2017207755A5 (enExample
Inventor
エヴァン ロビンソン トッド
ジェイ アーラザ ベルナベ
ギルバート ロエスラー ケネス
ブリンクリー デイヴィッド
イー ルクレア ジェフリー
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レイヴ リミテッド ライアビリティ カンパニー
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=58772394&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP7042039(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US15/160,263 external-priority patent/US10384238B2/en
Application filed by レイヴ リミテッド ライアビリティ カンパニー filed Critical レイヴ リミテッド ライアビリティ カンパニー
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Publication of JP2017207755A5 publication Critical patent/JP2017207755A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/652—Specific applications or type of materials impurities, foreign matter, trace amounts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/02—Monitoring the movement or position of the probe by optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/42—Functionalisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G01Q70/12—Nanotube tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Optics & Photonics (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Cleaning In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Filtering Materials (AREA)
JP2017100801A 2016-05-20 2017-05-22 高アスペクト構造からのデブリ除去 Active JP7042039B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/160,263 2016-05-20
US15/160,263 US10384238B2 (en) 2007-09-17 2016-05-20 Debris removal in high aspect structures

Publications (3)

Publication Number Publication Date
JP2017207755A JP2017207755A (ja) 2017-11-24
JP2017207755A5 JP2017207755A5 (enExample) 2020-08-13
JP7042039B2 true JP7042039B2 (ja) 2022-03-25

Family

ID=58772394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017100801A Active JP7042039B2 (ja) 2016-05-20 2017-05-22 高アスペクト構造からのデブリ除去

Country Status (4)

Country Link
EP (1) EP3251760B1 (enExample)
JP (1) JP7042039B2 (enExample)
KR (1) KR102433627B1 (enExample)
TW (3) TWI892579B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3964841A1 (de) 2020-09-02 2022-03-09 Siltronic AG Messapparatur und verfahren zum untersuchen eines bereichs einer oberfläche eines substrats mit hilfe einer kraft-messsonde
DE102021201669B4 (de) * 2021-02-22 2023-08-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer probe
JP7774996B2 (ja) * 2021-08-30 2025-11-25 キヤノン株式会社 成形装置、成形方法および物品の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008512573A (ja) 2004-09-03 2008-04-24 ハネウェル・インターナショナル・インコーポレーテッド 延伸ゲルスパンポリエチレンヤーン及び延伸のための方法
JP2008145242A (ja) 2006-12-08 2008-06-26 Sii Nanotechnology Inc 原子間力顕微鏡の加工用ダイヤモンド探針の観察方法及び加工方法
JP2008209544A (ja) 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
JP2009006378A (ja) 2007-06-29 2009-01-15 Sii Nanotechnology Inc 微細加工方法及び微細加工装置
JP2009103571A (ja) 2007-10-23 2009-05-14 Canon Inc 近接場光散乱用プローブおよびその製造方法
JP2010539714A (ja) 2007-09-17 2010-12-16 レイヴ，エルエルシー 高アスペクト構造における破片除去
CN102798735A (zh) 2012-08-14 2012-11-28 厦门大学 针尖增强暗场显微镜、电化学测试装置和调平系统
JP2015108570A (ja) 2013-12-05 2015-06-11 株式会社日立ハイテクマニファクチャ＆サービス 顕微ラマン分光装置および顕微ラマン分光システム

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JPH05164512A (ja) * 1991-12-13 1993-06-29 Toshiba Corp 表面測定装置
TW285721B (enExample) * 1994-12-27 1996-09-11 Siemens Ag
JP2005084582A (ja) * 2003-09-11 2005-03-31 Sii Nanotechnology Inc フォトマスクのパーティクル除去方法
JP2006339472A (ja) * 2005-06-03 2006-12-14 Matsushita Electric Ind Co Ltd プローブカード触針のクリーニング装置およびクリーニング方法
WO2008137883A1 (en) 2007-05-04 2008-11-13 Entropy Solutions, Inc. Package having phase change materials and method of use in transport of temperature sensitive payload
JP2009265176A (ja) * 2008-04-22 2009-11-12 Toshiba Corp 異物除去方法、異物除去装置および半導体装置の作製方法
DE102009015713A1 (de) 2009-03-31 2010-10-14 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren und System zur Teilchenanalyse in Mikrostrukturbauelementen durch eine Isolierung von Teilchen
JP2011133296A (ja) * 2009-12-24 2011-07-07 Yamaha Corp クリーニング装置、及び、プローブ針のクリーニング方法
US8819859B1 (en) 2013-02-01 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus of analyzing a sample and a method for the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008512573A (ja) 2004-09-03 2008-04-24 ハネウェル・インターナショナル・インコーポレーテッド 延伸ゲルスパンポリエチレンヤーン及び延伸のための方法
JP2008145242A (ja) 2006-12-08 2008-06-26 Sii Nanotechnology Inc 原子間力顕微鏡の加工用ダイヤモンド探針の観察方法及び加工方法
JP2008209544A (ja) 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
JP2009006378A (ja) 2007-06-29 2009-01-15 Sii Nanotechnology Inc 微細加工方法及び微細加工装置
JP2010539714A (ja) 2007-09-17 2010-12-16 レイヴ，エルエルシー 高アスペクト構造における破片除去
JP2009103571A (ja) 2007-10-23 2009-05-14 Canon Inc 近接場光散乱用プローブおよびその製造方法
CN102798735A (zh) 2012-08-14 2012-11-28 厦门大学 针尖增强暗场显微镜、电化学测试装置和调平系统
JP2015108570A (ja) 2013-12-05 2015-06-11 株式会社日立ハイテクマニファクチャ＆サービス 顕微ラマン分光装置および顕微ラマン分光システム

Also Published As

Publication number Publication date
JP2017207755A (ja) 2017-11-24
TWI841110B (zh) 2024-05-01
TW202446498A (zh) 2024-12-01
TW201805078A (zh) 2018-02-16
KR20170131264A (ko) 2017-11-29
TW202313219A (zh) 2023-04-01
TWI892579B (zh) 2025-08-01
EP3251760B1 (en) 2025-04-09
EP3251760A1 (en) 2017-12-06
TWI787181B (zh) 2022-12-21
KR102433627B1 (ko) 2022-08-18

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