KR102433627B1 - 고종횡비 구조물에서 잔해물 제거 - Google Patents

고종횡비 구조물에서 잔해물 제거 Download PDF

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Publication number
KR102433627B1
KR102433627B1 KR1020170061709A KR20170061709A KR102433627B1 KR 102433627 B1 KR102433627 B1 KR 102433627B1 KR 1020170061709 A KR1020170061709 A KR 1020170061709A KR 20170061709 A KR20170061709 A KR 20170061709A KR 102433627 B1 KR102433627 B1 KR 102433627B1
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South Korea
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tip
radiation
spm
collection
particles
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KR20170131264A (ko
Inventor
토드 에반 로빈슨
버나브 제이. 어루자
케네쓰 길버트 로슬러
데이빗 브린클리
제프리 이. 르클레어
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브루커 나노, 아이엔씨.
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Priority claimed from US15/160,263 external-priority patent/US10384238B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/652—Specific applications or type of materials impurities, foreign matter, trace amounts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/02—Monitoring the movement or position of the probe by optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/42—Functionalisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G01Q70/12—Nanotube tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Optics & Photonics (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Cleaning In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Filtering Materials (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020170061709A 2016-05-20 2017-05-18 고종횡비 구조물에서 잔해물 제거 Active KR102433627B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/160,263 US10384238B2 (en) 2007-09-17 2016-05-20 Debris removal in high aspect structures
US15/160,263 2016-05-20

Publications (2)

Publication Number Publication Date
KR20170131264A KR20170131264A (ko) 2017-11-29
KR102433627B1 true KR102433627B1 (ko) 2022-08-18

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Country Status (4)

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EP (1) EP3251760B1 (enExample)
JP (1) JP7042039B2 (enExample)
KR (1) KR102433627B1 (enExample)
TW (3) TWI841110B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3964841A1 (de) 2020-09-02 2022-03-09 Siltronic AG Messapparatur und verfahren zum untersuchen eines bereichs einer oberfläche eines substrats mit hilfe einer kraft-messsonde
DE102021201669B4 (de) * 2021-02-22 2023-08-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer probe

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100485024B1 (ko) * 1994-12-27 2005-08-03 지멘스 악티엔게젤샤프트 포토마스크를세척하기위한장치및방법
JP2006339472A (ja) * 2005-06-03 2006-12-14 Matsushita Electric Ind Co Ltd プローブカード触針のクリーニング装置およびクリーニング方法
JP2008209544A (ja) * 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
JP2011133296A (ja) 2009-12-24 2011-07-07 Yamaha Corp クリーニング装置、及び、プローブ針のクリーニング方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05164512A (ja) * 1991-12-13 1993-06-29 Toshiba Corp 表面測定装置
JP2005084582A (ja) * 2003-09-11 2005-03-31 Sii Nanotechnology Inc フォトマスクのパーティクル除去方法
CA2580115C (en) * 2004-09-03 2011-04-05 Honeywell International Inc. Drawn gel-spun polyethylene yarns and process for drawing
JP4820740B2 (ja) * 2006-12-08 2011-11-24 エスアイアイ・ナノテクノロジー株式会社 加工用ダイヤモンド探針の加工方法
JP2009006378A (ja) * 2007-06-29 2009-01-15 Sii Nanotechnology Inc 微細加工方法及び微細加工装置
US8287653B2 (en) * 2007-09-17 2012-10-16 Rave, Llc Debris removal in high aspect structures
JP5031509B2 (ja) * 2007-10-23 2012-09-19 キヤノン株式会社 近接場光散乱用プローブおよびその製造方法
JP2009265176A (ja) * 2008-04-22 2009-11-12 Toshiba Corp 異物除去方法、異物除去装置および半導体装置の作製方法
CN102798735B (zh) * 2012-08-14 2015-03-04 厦门大学 针尖增强暗场显微镜、电化学测试装置和调平系统
JP6215677B2 (ja) * 2013-12-05 2017-10-18 株式会社日立ハイテクマニファクチャ＆サービス 顕微ラマン分光装置および顕微ラマン分光システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100485024B1 (ko) * 1994-12-27 2005-08-03 지멘스 악티엔게젤샤프트 포토마스크를세척하기위한장치및방법
JP2006339472A (ja) * 2005-06-03 2006-12-14 Matsushita Electric Ind Co Ltd プローブカード触針のクリーニング装置およびクリーニング方法
JP2008209544A (ja) * 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
JP2011133296A (ja) 2009-12-24 2011-07-07 Yamaha Corp クリーニング装置、及び、プローブ針のクリーニング方法

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TW202313219A (zh) 2023-04-01
TWI892579B (zh) 2025-08-01
TW202446498A (zh) 2024-12-01
JP2017207755A (ja) 2017-11-24
EP3251760A1 (en) 2017-12-06
TWI787181B (zh) 2022-12-21
JP7042039B2 (ja) 2022-03-25
TW201805078A (zh) 2018-02-16
TWI841110B (zh) 2024-05-01
KR20170131264A (ko) 2017-11-29
EP3251760B1 (en) 2025-04-09

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