JP2010539714A - 高アスペクト構造における破片除去 - Google Patents
高アスペクト構造における破片除去 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C7/00—Separating solids from solids by electrostatic effect
- B03C7/006—Charging without electricity supply, e.g. by tribo-electricity or pyroelectricity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
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- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- Engineering & Computer Science (AREA)
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Abstract
Description
本発明の多くの特徴及び有利点は、詳細な明細書から明らかとなり、それ故に、添付の特許請求の範囲によって、本発明の真の精神及び範囲内に含まれる本発明のそのような特徴及び有利点の全てをカバーすることを目的としている。更に、当業者は、多くの改良例及び変形例に容易に気付くであろうから、図示され且つ説明された構造及び操作そのものに本発明を限定することは望ましくなく、従って、適切な改良例及び均等物の全てが本発明の範囲内に含まれるものとする。
Claims (20)
- 破片除去方法であって:
基板にある破片の近傍にナノメートルスケールのチップを位置付けるステップ;
前記チップに前記破片を物理的に付着させるステップ;及び
前記基板から前記チップを遠ざけることによって前記基板から前記破片を除去するステップ;
を含む方法。 - 前記付着させるステップは、前記チップの一部にコーティングを形成するステップを含み、該コーティングは、前記基板よりも低い表面エネルギーを有するコーティング材を含む、
請求項1の方法。 - 前記付着させるステップは、前記チップの一部にポリテトラフルオロエチレンのコーティングを形成するステップを含む、
請求項2の方法。 - 前記チップが別の破片の近傍となるよう前記基板に対して前記チップを移動させるステップ;
前記チップに前記別の破片を付着させるステップ;及び
前記基板から前記チップを遠ざけることによって前記基板から前記別の破片を除去するステップ;を含む、
請求項1の方法。 - 前記基板から離れたところに位置付けられる物質に前記破片を置くステップを含み、該物質は、前記破片よりも低い表面エネルギーを有する物質を含む、
請求項1の方法。 - 前記置くステップは、前記基板を支持するステージに前記物質を位置付けるステップを含む、
請求項5の方法。 - 前記物質を代わりの物質で定期的に置き換えるステップを更に含む、
請求項5の方法。 - 前記基板から離れたところに位置付けられる物質に前記チップを押し込むことによって前記コーティングを補給するステップを含み、前記物質は、前記コーティング材の表面エネルギーを超えない表面エネルギーを有する物質を含む、
請求項2の方法。 - 前記補給するステップは、前記チップを前記物質に押し込んだ後に前記チップを前記物質内で横に動かすステップを更に含む、
請求項8の方法。 - 前記チップの頂点から前記チップを支持するカンチレバーの方に前記破片を離すように押すために、前記基板から離れたところに位置付けられる物質を利用するステップを含む、
請求項1の方法。 - 前記コーティングは、金属材料を更に含む、
請求項2の方法。 - 前記位置付けるステップは、前記基板内に形成された溝内に前記チップを位置付けるステップを含む、
請求項1の方法。 - 破片除去装置であって:
基板の近傍に位置付けられるナノメートルスケールのチップ;
前記チップ上に形成されるコーティングであり、低表面エネルギー物質を含むコーティング;及び
前記基板の近傍に位置付けられる低表面エネルギー物質;
を含む装置。 - 前記コーティングは、ポリテトラフルオロエチレンを含む、
請求項13に記載された装置。 - 前記コーティングは、金属材料を更に含む、
請求項14に記載された装置。 - 前記低表面エネルギー物質は、ポリテトラフルオロエチレンを含む、
請求項13に記載された装置。 - 前記低表面エネルギー物質は、取り外し可能である、
請求項13に記載された装置。 - 前記チップは、高アスペクト比のチップである、
請求項13に記載された装置。 - 前記低表面エネルギー物質は、前記基板を支持するステージに取り付けられる実質的に平坦なパッチの形をとる、
請求項13に記載された装置。 - 破片除去装置であって:
基板にある破片の近傍にナノメートルスケールのチップを位置付ける手段;
前記チップに前記破片を物理的に付着させる手段;及び
前記基板から前記チップを遠ざけることによって前記基板から前記破片を除去する手段;を含む、
装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/898,836 US8287653B2 (en) | 2007-09-17 | 2007-09-17 | Debris removal in high aspect structures |
US11/898,836 | 2007-09-17 | ||
PCT/US2008/076514 WO2009039088A1 (en) | 2007-09-17 | 2008-09-16 | Debris removal in high aspect structures |
Publications (3)
Publication Number | Publication Date |
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JP2010539714A true JP2010539714A (ja) | 2010-12-16 |
JP2010539714A5 JP2010539714A5 (ja) | 2012-11-08 |
JP5386490B2 JP5386490B2 (ja) | 2014-01-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010525079A Active JP5386490B2 (ja) | 2007-09-17 | 2008-09-16 | 高アスペクト構造における破片除去 |
Country Status (7)
Country | Link |
---|---|
US (3) | US8287653B2 (ja) |
EP (4) | EP2198451B1 (ja) |
JP (1) | JP5386490B2 (ja) |
KR (1) | KR101428137B1 (ja) |
PL (1) | PL3726566T3 (ja) |
TW (1) | TWI460773B (ja) |
WO (1) | WO2009039088A1 (ja) |
Cited By (5)
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JP2017207755A (ja) * | 2016-05-20 | 2017-11-24 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP2017207492A (ja) * | 2016-05-20 | 2017-11-24 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP2019506637A (ja) * | 2016-01-29 | 2019-03-07 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
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KR20090103200A (ko) * | 2008-03-27 | 2009-10-01 | 주식회사 하이닉스반도체 | 포토마스크의 파티클 제거방법 |
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US10418527B2 (en) * | 2014-10-31 | 2019-09-17 | eLux, Inc. | System and method for the fluidic assembly of emissive displays |
US10446728B2 (en) * | 2014-10-31 | 2019-10-15 | eLux, Inc. | Pick-and remove system and method for emissive display repair |
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US11001785B2 (en) * | 2015-10-30 | 2021-05-11 | Yale University | Systems and methods for particulate removal using polymeric microstructures |
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- 2008-09-16 EP EP23188721.7A patent/EP4239407A3/en active Pending
- 2008-09-16 JP JP2010525079A patent/JP5386490B2/ja active Active
- 2008-09-16 KR KR1020107008163A patent/KR101428137B1/ko active IP Right Grant
- 2008-09-16 WO PCT/US2008/076514 patent/WO2009039088A1/en active Application Filing
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US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
US11577286B2 (en) | 2007-09-17 | 2023-02-14 | Bruker Nano, Inc. | Debris removal in high aspect structures |
US11964310B2 (en) | 2007-09-17 | 2024-04-23 | Bruker Nano, Inc. | Debris removal from high aspect structures |
JP2019506637A (ja) * | 2016-01-29 | 2019-03-07 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP7498384B2 (ja) | 2016-01-29 | 2024-06-12 | ブルーカー ナノ インコーポレイテッド | 高アスペクト構造からのデブリ除去 |
JP2017207755A (ja) * | 2016-05-20 | 2017-11-24 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP2017207492A (ja) * | 2016-05-20 | 2017-11-24 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP7042039B2 (ja) | 2016-05-20 | 2022-03-25 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP2022050485A (ja) * | 2016-05-20 | 2022-03-30 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
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TW200924039A (en) | 2009-06-01 |
US20140176922A1 (en) | 2014-06-26 |
US8696818B2 (en) | 2014-04-15 |
US8287653B2 (en) | 2012-10-16 |
KR20100076973A (ko) | 2010-07-06 |
EP4239407A2 (en) | 2023-09-06 |
KR101428137B1 (ko) | 2014-08-07 |
TWI460773B (zh) | 2014-11-11 |
EP2198451B1 (en) | 2016-07-13 |
WO2009039088A1 (en) | 2009-03-26 |
US20090071506A1 (en) | 2009-03-19 |
EP3147937B1 (en) | 2020-07-15 |
EP2198451A4 (en) | 2014-05-14 |
EP4239407A3 (en) | 2023-12-13 |
EP3726566B1 (en) | 2023-08-02 |
PL3726566T3 (pl) | 2024-04-15 |
EP2198451A1 (en) | 2010-06-23 |
EP3147937A1 (en) | 2017-03-29 |
EP3726566A1 (en) | 2020-10-21 |
JP5386490B2 (ja) | 2014-01-15 |
US20130037053A1 (en) | 2013-02-14 |
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