JP7041489B2 - 評価方法、決定方法、リソグラフィ装置、およびプログラム - Google Patents

評価方法、決定方法、リソグラフィ装置、およびプログラム Download PDF

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Publication number
JP7041489B2
JP7041489B2 JP2017202857A JP2017202857A JP7041489B2 JP 7041489 B2 JP7041489 B2 JP 7041489B2 JP 2017202857 A JP2017202857 A JP 2017202857A JP 2017202857 A JP2017202857 A JP 2017202857A JP 7041489 B2 JP7041489 B2 JP 7041489B2
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Japan
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mark
frequency component
substrate
measurement conditions
evaluation method
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Japanese (ja)
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JP2019074724A5 (enExample
JP2019074724A (ja
Inventor
元気 村山
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Canon Inc
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Canon Inc
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Priority to JP2017202857A priority Critical patent/JP7041489B2/ja
Priority to KR1020180121161A priority patent/KR102410822B1/ko
Priority to US16/159,909 priority patent/US10943343B2/en
Priority to CN201811199388.7A priority patent/CN109683449B/zh
Publication of JP2019074724A publication Critical patent/JP2019074724A/ja
Publication of JP2019074724A5 publication Critical patent/JP2019074724A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T5/00—Image enhancement or restoration
    • G06T5/20—Image enhancement or restoration using local operators
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T5/00—Image enhancement or restoration
    • G06T5/70—Denoising; Smoothing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30204—Marker

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Signal Processing (AREA)
  • Quality & Reliability (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2017202857A 2017-10-19 2017-10-19 評価方法、決定方法、リソグラフィ装置、およびプログラム Active JP7041489B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017202857A JP7041489B2 (ja) 2017-10-19 2017-10-19 評価方法、決定方法、リソグラフィ装置、およびプログラム
KR1020180121161A KR102410822B1 (ko) 2017-10-19 2018-10-11 평가 방법, 결정 방법, 리소그래피 장치, 및 비일시적 컴퓨터 판독가능 저장 매체
US16/159,909 US10943343B2 (en) 2017-10-19 2018-10-15 Evaluation method, determination method, lithography apparatus, and non-transitory computer-readable storage medium
CN201811199388.7A CN109683449B (zh) 2017-10-19 2018-10-16 评价方法、确定方法、光刻装置和非暂时性计算机可读存储介质

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017202857A JP7041489B2 (ja) 2017-10-19 2017-10-19 評価方法、決定方法、リソグラフィ装置、およびプログラム

Publications (3)

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JP2019074724A JP2019074724A (ja) 2019-05-16
JP2019074724A5 JP2019074724A5 (enExample) 2020-11-19
JP7041489B2 true JP7041489B2 (ja) 2022-03-24

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US (1) US10943343B2 (enExample)
JP (1) JP7041489B2 (enExample)
KR (1) KR102410822B1 (enExample)
CN (1) CN109683449B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7659388B2 (ja) * 2020-12-08 2025-04-09 キヤノン株式会社 検出装置、検出方法、露光装置、露光システム、物品製造方法、およびプログラム
KR20230088255A (ko) * 2021-12-10 2023-06-19 캐논 가부시끼가이샤 계측 장치, 리소그래피 장치, 및 물품 제조 방법
JP2024092689A (ja) * 2022-12-26 2024-07-08 キヤノン株式会社 成形方法、成形装置、および物品の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000057126A1 (en) 1999-03-24 2000-09-28 Nikon Corporation Position determining device, position determining method and exposure device, exposure method and alignment determining device, and alignment determining method
US20020072003A1 (en) 2000-10-30 2002-06-13 Nova Measuring Instruments Ltd. Process control for micro-lithography
JP2008066638A (ja) 2006-09-11 2008-03-21 Canon Inc マークの位置を検出する装置
JP2008166737A (ja) 2006-12-04 2008-07-17 Canon Inc 露光装置及びデバイス製造方法
JP2008221822A (ja) 2006-04-18 2008-09-25 Canon Inc 位置合わせ方法、インプリント方法、位置合わせ装置、及び位置計測方法
JP2012059853A (ja) 2010-09-08 2012-03-22 Nikon Corp 検出条件最適化方法、プログラム作成方法、並びに露光装置及びマーク検出装置
JP2015015318A (ja) 2013-07-03 2015-01-22 キヤノン株式会社 処理方法、処理装置、リソグラフィ装置、及び物品の製造方法

Family Cites Families (6)

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KR20010053600A (ko) * 1998-07-22 2001-06-25 오노 시게오 마크검지방법, 노광방법, 및 디바이스 제조방법, 및마크검지장치, 노광장치, 및 디바이스
JP2003203846A (ja) 2002-01-08 2003-07-18 Canon Inc 位置合わせ方法及びパラメータ選択方法
US7403265B2 (en) * 2005-03-30 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing data filtering
US8107051B2 (en) * 2006-12-04 2012-01-31 Canon Kabushiki Kaisha Exposure apparatus with improved alignment mark position measurement condition setting feature, and device manufacturing method using the same
JP2011159753A (ja) * 2010-01-29 2011-08-18 Nikon Corp 検出条件最適化方法、プログラム作成方法、及び露光装置
US10295409B2 (en) * 2016-02-11 2019-05-21 Toshiba Memory Corporation Substrate measurement system, method of measuring substrate, and computer program product

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000057126A1 (en) 1999-03-24 2000-09-28 Nikon Corporation Position determining device, position determining method and exposure device, exposure method and alignment determining device, and alignment determining method
US20020072003A1 (en) 2000-10-30 2002-06-13 Nova Measuring Instruments Ltd. Process control for micro-lithography
JP2008221822A (ja) 2006-04-18 2008-09-25 Canon Inc 位置合わせ方法、インプリント方法、位置合わせ装置、及び位置計測方法
JP2008066638A (ja) 2006-09-11 2008-03-21 Canon Inc マークの位置を検出する装置
JP2008166737A (ja) 2006-12-04 2008-07-17 Canon Inc 露光装置及びデバイス製造方法
JP2012059853A (ja) 2010-09-08 2012-03-22 Nikon Corp 検出条件最適化方法、プログラム作成方法、並びに露光装置及びマーク検出装置
JP2015015318A (ja) 2013-07-03 2015-01-22 キヤノン株式会社 処理方法、処理装置、リソグラフィ装置、及び物品の製造方法

Also Published As

Publication number Publication date
US10943343B2 (en) 2021-03-09
KR102410822B1 (ko) 2022-06-21
KR20190044004A (ko) 2019-04-29
JP2019074724A (ja) 2019-05-16
US20190122358A1 (en) 2019-04-25
CN109683449A (zh) 2019-04-26
CN109683449B (zh) 2021-09-17

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