CN109683449B - 评价方法、确定方法、光刻装置和非暂时性计算机可读存储介质 - Google Patents

评价方法、确定方法、光刻装置和非暂时性计算机可读存储介质 Download PDF

Info

Publication number
CN109683449B
CN109683449B CN201811199388.7A CN201811199388A CN109683449B CN 109683449 B CN109683449 B CN 109683449B CN 201811199388 A CN201811199388 A CN 201811199388A CN 109683449 B CN109683449 B CN 109683449B
Authority
CN
China
Prior art keywords
marker
evaluation
signals
mark
frequency component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811199388.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN109683449A (zh
Inventor
村山元气
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN109683449A publication Critical patent/CN109683449A/zh
Application granted granted Critical
Publication of CN109683449B publication Critical patent/CN109683449B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T5/00—Image enhancement or restoration
    • G06T5/20—Image enhancement or restoration using local operators
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T5/00—Image enhancement or restoration
    • G06T5/70—Denoising; Smoothing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30204—Marker

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Signal Processing (AREA)
  • Quality & Reliability (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201811199388.7A 2017-10-19 2018-10-16 评价方法、确定方法、光刻装置和非暂时性计算机可读存储介质 Active CN109683449B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017202857A JP7041489B2 (ja) 2017-10-19 2017-10-19 評価方法、決定方法、リソグラフィ装置、およびプログラム
JP2017-202857 2017-10-19

Publications (2)

Publication Number Publication Date
CN109683449A CN109683449A (zh) 2019-04-26
CN109683449B true CN109683449B (zh) 2021-09-17

Family

ID=66170030

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811199388.7A Active CN109683449B (zh) 2017-10-19 2018-10-16 评价方法、确定方法、光刻装置和非暂时性计算机可读存储介质

Country Status (4)

Country Link
US (1) US10943343B2 (enExample)
JP (1) JP7041489B2 (enExample)
KR (1) KR102410822B1 (enExample)
CN (1) CN109683449B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7659388B2 (ja) * 2020-12-08 2025-04-09 キヤノン株式会社 検出装置、検出方法、露光装置、露光システム、物品製造方法、およびプログラム
KR20230088255A (ko) * 2021-12-10 2023-06-19 캐논 가부시끼가이샤 계측 장치, 리소그래피 장치, 및 물품 제조 방법
JP2024092689A (ja) * 2022-12-26 2024-07-08 キヤノン株式会社 成形方法、成形装置、および物品の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053490A (zh) * 2006-04-18 2011-05-11 佳能株式会社 压印设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010053600A (ko) * 1998-07-22 2001-06-25 오노 시게오 마크검지방법, 노광방법, 및 디바이스 제조방법, 및마크검지장치, 노광장치, 및 디바이스
WO2000057126A1 (en) 1999-03-24 2000-09-28 Nikon Corporation Position determining device, position determining method and exposure device, exposure method and alignment determining device, and alignment determining method
IL139368A (en) 2000-10-30 2006-12-10 Nova Measuring Instr Ltd Process control for microlithography
JP2003203846A (ja) 2002-01-08 2003-07-18 Canon Inc 位置合わせ方法及びパラメータ選択方法
US7403265B2 (en) * 2005-03-30 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing data filtering
JP5002221B2 (ja) 2006-09-11 2012-08-15 キヤノン株式会社 マークの位置を検出する装置
US8107051B2 (en) * 2006-12-04 2012-01-31 Canon Kabushiki Kaisha Exposure apparatus with improved alignment mark position measurement condition setting feature, and device manufacturing method using the same
JP5132277B2 (ja) 2006-12-04 2013-01-30 キヤノン株式会社 計測装置、露光装置及びデバイス製造方法
JP2011159753A (ja) * 2010-01-29 2011-08-18 Nikon Corp 検出条件最適化方法、プログラム作成方法、及び露光装置
JP2012059853A (ja) 2010-09-08 2012-03-22 Nikon Corp 検出条件最適化方法、プログラム作成方法、並びに露光装置及びマーク検出装置
JP2015015318A (ja) 2013-07-03 2015-01-22 キヤノン株式会社 処理方法、処理装置、リソグラフィ装置、及び物品の製造方法
US10295409B2 (en) * 2016-02-11 2019-05-21 Toshiba Memory Corporation Substrate measurement system, method of measuring substrate, and computer program product

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053490A (zh) * 2006-04-18 2011-05-11 佳能株式会社 压印设备

Also Published As

Publication number Publication date
US10943343B2 (en) 2021-03-09
KR102410822B1 (ko) 2022-06-21
KR20190044004A (ko) 2019-04-29
JP2019074724A (ja) 2019-05-16
US20190122358A1 (en) 2019-04-25
CN109683449A (zh) 2019-04-26
JP7041489B2 (ja) 2022-03-24

Similar Documents

Publication Publication Date Title
KR102160840B1 (ko) 임베디드 sem 구조물 오버레이 타겟을 갖는 ovl을 위한 디바이스 상관 계측(dcm)
US7643961B2 (en) Position detecting device and position detecting method
CN109683449B (zh) 评价方法、确定方法、光刻装置和非暂时性计算机可读存储介质
TW202238288A (zh) 檢測裝置、檢測方法、曝光裝置、曝光系統及物品製造方法
EP1441258B1 (en) Alignment method and overlay inspection method
US20150011026A1 (en) Processing method, processing apparatus, lithography apparatus, and method of manufacturing article
JP6491833B2 (ja) 高さ測定装置
TW200937144A (en) Alignment method, exposure method, pattern forming method, and exposure apparatus
JP6608130B2 (ja) 計測装置、リソグラフィ装置、及び物品の製造方法
KR20170018786A (ko) 평가방법, 기록매체, 노광장치, 노광방법, 및 물품의 제조방법
JP5672800B2 (ja) フォトマスクの評価システム及びその方法
US20210090231A1 (en) Method and apparatus of determining mark position
JP2019074724A5 (enExample)
US8976337B2 (en) Method of measuring mark position and measuring apparatus
JP5261891B2 (ja) アライメントマークおよび位置計測方法
JP4484041B2 (ja) エッジ位置検出装置
JP4891040B2 (ja) 計測装置、計測方法、露光装置及びデバイス製造方法
JP5922927B2 (ja) 位置を求める方法、情報処理装置、リソグラフィ装置及び物品の製造方法
JPH08115869A (ja) 位置合わせ方法
KR20120086073A (ko) 오버레이 계측 방법 및 그 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant