JP7023436B1 - 超音波トランスデューサー及びその製造方法 - Google Patents

超音波トランスデューサー及びその製造方法 Download PDF

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Publication number
JP7023436B1
JP7023436B1 JP2021565782A JP2021565782A JP7023436B1 JP 7023436 B1 JP7023436 B1 JP 7023436B1 JP 2021565782 A JP2021565782 A JP 2021565782A JP 2021565782 A JP2021565782 A JP 2021565782A JP 7023436 B1 JP7023436 B1 JP 7023436B1
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Japan
Prior art keywords
piezoelectric element
plate
ultrasonic transducer
support plate
opening width
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JP2021565782A
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English (en)
Japanese (ja)
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JPWO2022168188A1 (https=
Inventor
知 高杉
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Suncall Corp
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Suncall Corp
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Publication of JPWO2022168188A1 publication Critical patent/JPWO2022168188A1/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • B06B1/0629—Square array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R29/00—Monitoring arrangements; Testing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Transducers For Ultrasonic Waves (AREA)
JP2021565782A 2021-02-03 2021-02-03 超音波トランスデューサー及びその製造方法 Active JP7023436B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/003816 WO2022168188A1 (ja) 2021-02-03 2021-02-03 超音波トランスデューサー及びその製造方法

Publications (2)

Publication Number Publication Date
JP7023436B1 true JP7023436B1 (ja) 2022-02-21
JPWO2022168188A1 JPWO2022168188A1 (https=) 2022-08-11

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ID=81076728

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JP2021565782A Active JP7023436B1 (ja) 2021-02-03 2021-02-03 超音波トランスデューサー及びその製造方法

Country Status (3)

Country Link
US (1) US20240082877A1 (https=)
JP (1) JP7023436B1 (https=)
WO (1) WO2022168188A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114864806A (zh) * 2022-06-01 2022-08-05 上海交通大学 具有短波导结构的超声换能器及制造方法、超声检测装置
CN114947946A (zh) * 2022-06-01 2022-08-30 上海交通大学 柔性超声换能器及其制造方法、超声检测装置
JP7288562B1 (ja) * 2022-12-08 2023-06-07 サンコール株式会社 超音波トランスデューサーアレイ及び超音波フェイズドアレイセンサー
WO2024201639A1 (ja) * 2023-03-27 2024-10-03 サンコール株式会社 圧電素子、超音波トランスデューサー及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020115940A (ja) * 2019-01-18 2020-08-06 コニカミノルタ株式会社 超音波プローブ、及び超音波診断装置
JP6776481B1 (ja) * 2020-01-30 2020-10-28 サンコール株式会社 超音波トランスデューサー及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020115940A (ja) * 2019-01-18 2020-08-06 コニカミノルタ株式会社 超音波プローブ、及び超音波診断装置
JP6776481B1 (ja) * 2020-01-30 2020-10-28 サンコール株式会社 超音波トランスデューサー及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114864806A (zh) * 2022-06-01 2022-08-05 上海交通大学 具有短波导结构的超声换能器及制造方法、超声检测装置
CN114947946A (zh) * 2022-06-01 2022-08-30 上海交通大学 柔性超声换能器及其制造方法、超声检测装置
CN114864806B (zh) * 2022-06-01 2026-02-03 上海交通大学 具有短波导结构的超声换能器及制造方法、超声检测装置
JP7288562B1 (ja) * 2022-12-08 2023-06-07 サンコール株式会社 超音波トランスデューサーアレイ及び超音波フェイズドアレイセンサー
WO2024122021A1 (ja) * 2022-12-08 2024-06-13 サンコール株式会社 超音波トランスデューサーアレイ及び超音波フェイズドアレイセンサー
WO2024201639A1 (ja) * 2023-03-27 2024-10-03 サンコール株式会社 圧電素子、超音波トランスデューサー及びその製造方法
JPWO2024201639A1 (https=) * 2023-03-27 2024-10-03
JP7671420B2 (ja) 2023-03-27 2025-05-01 サンコール株式会社 圧電素子、超音波トランスデューサー及びその製造方法

Also Published As

Publication number Publication date
US20240082877A1 (en) 2024-03-14
JPWO2022168188A1 (https=) 2022-08-11
WO2022168188A1 (ja) 2022-08-11

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