JP7008634B2 - アルキルアミンを用いたａ／ｍ／ｘ材料の製造方法 - Google Patents

アルキルアミンを用いたａ／ｍ／ｘ材料の製造方法 Download PDF

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JP7008634B2
JP7008634B2 JP2018546829A JP2018546829A JP7008634B2 JP 7008634 B2 JP7008634 B2 JP 7008634B2 JP 2018546829 A JP2018546829 A JP 2018546829A JP 2018546829 A JP2018546829 A JP 2018546829A JP 7008634 B2 JP7008634 B2 JP 7008634B2
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JP2019516232A (ja
JP2019516232A5 (enExample
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ジェームズ スナイス，ヘンリー
ナヤク，パビトラ
ウェンジャー，バーナード
ノエル，ニキータ
ハビスレウティンガー，セベリン
ムーア，デビッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
JP2018546829A 2016-03-09 2017-03-08 アルキルアミンを用いたａ／ｍ／ｘ材料の製造方法 Active JP7008634B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1604050.3A GB201604050D0 (en) 2016-03-09 2016-03-09 A/M/X material production process with alkylamine
GB1604050.3 2016-03-09
PCT/GB2017/050623 WO2017153752A1 (en) 2016-03-09 2017-03-08 A/m/x material production process with alkylamine

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JP2019516232A JP2019516232A (ja) 2019-06-13
JP2019516232A5 JP2019516232A5 (enExample) 2020-04-16
JP7008634B2 true JP7008634B2 (ja) 2022-02-10

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US (1) US10797255B2 (enExample)
EP (1) EP3427290B1 (enExample)
JP (1) JP7008634B2 (enExample)
KR (1) KR102363283B1 (enExample)
CN (1) CN108780759B (enExample)
ES (1) ES2884327T3 (enExample)
GB (1) GB201604050D0 (enExample)
PL (1) PL3427290T3 (enExample)
WO (1) WO2017153752A1 (enExample)

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EP3679607B1 (en) * 2017-09-06 2025-03-12 Alliance for Sustainable Energy, LLC Organic-inorganic perovskite materials and methods of making the same
JP7304517B2 (ja) * 2018-07-10 2023-07-07 パナソニックＩｐマネジメント株式会社 太陽電池
GB201811538D0 (en) * 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
TWI827645B (zh) * 2018-08-23 2024-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理設備及方法
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201817166D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Multi-junction device production process
US11631582B2 (en) 2018-11-21 2023-04-18 Cubicpv Inc. Enhanced perovskite materials for photovoltaic devices
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US11339058B2 (en) * 2018-12-14 2022-05-24 Alliance For Sustainable Energy, Llc Manufacturing of perovskite films
CN110048001A (zh) * 2019-04-01 2019-07-23 桂林理工大学 一种通过卤素替换工程来调节铋基有机-无机杂化材料形貌、带隙和稳定性的方法
CN113812012A (zh) * 2019-05-29 2021-12-17 松下知识产权经营株式会社 光电转换膜和采用该光电转换膜的太阳能电池以及光电转换膜的制造方法
WO2020243287A1 (en) 2019-05-30 2020-12-03 Energy Materials Corporation Method of making a perovskite layer at high speed
CN110862232A (zh) * 2019-11-12 2020-03-06 宁波大学 一种硫基微晶玻璃材料及其制备方法
CN113929641B (zh) * 2020-07-14 2025-05-06 西安固能新材料科技有限公司 系列乙二铵三元晶态化合物及其制备方法以及作为含能材料的用途
WO2021207344A1 (en) * 2020-04-08 2021-10-14 The Trustees Of Princeton University Thermal management for perovskite electronic devices
US20210388009A1 (en) * 2020-06-10 2021-12-16 Nanyang Technological University Organic metal-halide perovskite precursor, process for production and use thereof
CN111883664B (zh) * 2020-06-30 2022-09-23 西安理工大学 一种双注入倍增型有机光电探测器及其制备方法
US11846886B2 (en) 2020-11-23 2023-12-19 International Business Machines Corporation Photoacid generator
KR102573246B1 (ko) * 2021-04-20 2023-09-01 한국과학기술원 할라이드 페로브스카이트 박막의 저온 용액 공정 제조를 위한 용매 및 이를 이용한 페로브스카이트 박막 제조 방법
WO2023047116A1 (en) 2021-09-22 2023-03-30 Oxford University Innovation Limited Perovskite production process
KR102761911B1 (ko) * 2022-09-21 2025-02-05 서울대학교산학협력단 탠덤 태양전지의 제조방법
CN117205950A (zh) * 2023-09-19 2023-12-12 浙江师范大学 一种水稳定型卤化物钙钛矿Cs2Pt0.25Sn0.75Br6光催化剂的制备及应用
WO2025135104A1 (ja) * 2023-12-22 2025-06-26 株式会社カネカ ペロブスカイト前駆体液、太陽電池製造方法および太陽電池
CN118382342B (zh) * 2024-06-19 2024-10-01 天合光能股份有限公司 钙钛矿吸光层的制备方法、钙钛矿太阳能电池、光伏组件和光伏系统

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KR102363283B1 (ko) 2022-02-15
US20190115549A1 (en) 2019-04-18
PL3427290T3 (pl) 2022-01-10
US10797255B2 (en) 2020-10-06
CN108780759A (zh) 2018-11-09
EP3427290B1 (en) 2021-08-04
WO2017153752A1 (en) 2017-09-14
GB201604050D0 (en) 2016-04-20
EP3427290A1 (en) 2019-01-16
JP2019516232A (ja) 2019-06-13
KR20180122393A (ko) 2018-11-12
ES2884327T3 (es) 2021-12-10
CN108780759B (zh) 2023-08-08

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