JP7002722B2 - 気相成長装置 - Google Patents

気相成長装置 Download PDF

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Publication number
JP7002722B2
JP7002722B2 JP2017183987A JP2017183987A JP7002722B2 JP 7002722 B2 JP7002722 B2 JP 7002722B2 JP 2017183987 A JP2017183987 A JP 2017183987A JP 2017183987 A JP2017183987 A JP 2017183987A JP 7002722 B2 JP7002722 B2 JP 7002722B2
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raw material
material gas
supply pipe
gas supply
reaction vessel
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Japanese (ja)
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JP2019059636A (ja
JP2019059636A5 (enExample
Inventor
州吾 新田
善央 本田
謙太郎 永松
浩 天野
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Toyoda Gosei Co Ltd
Tokai National Higher Education and Research System
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Toyoda Gosei Co Ltd
Tokai National Higher Education and Research System
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Application filed by Toyoda Gosei Co Ltd, Tokai National Higher Education and Research System filed Critical Toyoda Gosei Co Ltd
Priority to JP2017183987A priority Critical patent/JP7002722B2/ja
Priority to US16/649,371 priority patent/US11591717B2/en
Priority to CN201880061909.4A priority patent/CN111133133B/zh
Priority to PCT/JP2018/033324 priority patent/WO2019059009A1/ja
Publication of JP2019059636A publication Critical patent/JP2019059636A/ja
Publication of JP2019059636A5 publication Critical patent/JP2019059636A5/ja
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Publication of JP7002722B2 publication Critical patent/JP7002722B2/ja
Priority to US18/112,750 priority patent/US12009206B2/en
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2017183987A 2017-09-25 2017-09-25 気相成長装置 Active JP7002722B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017183987A JP7002722B2 (ja) 2017-09-25 2017-09-25 気相成長装置
US16/649,371 US11591717B2 (en) 2017-09-25 2018-09-07 Vapor phase epitaxial growth device
CN201880061909.4A CN111133133B (zh) 2017-09-25 2018-09-07 气相生长装置及其控制方法
PCT/JP2018/033324 WO2019059009A1 (ja) 2017-09-25 2018-09-07 気相成長装置
US18/112,750 US12009206B2 (en) 2017-09-25 2023-02-22 Vapor phase epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017183987A JP7002722B2 (ja) 2017-09-25 2017-09-25 気相成長装置

Publications (3)

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JP2019059636A JP2019059636A (ja) 2019-04-18
JP2019059636A5 JP2019059636A5 (enExample) 2020-10-15
JP7002722B2 true JP7002722B2 (ja) 2022-02-04

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JP2017183987A Active JP7002722B2 (ja) 2017-09-25 2017-09-25 気相成長装置

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023125477A (ja) * 2022-02-28 2023-09-07 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶の製造装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002316892A (ja) 2001-04-12 2002-10-31 Matsushita Electric Ind Co Ltd 気相成長装置
JP2003306398A (ja) 2002-04-09 2003-10-28 Denso Corp 炭化珪素単結晶の製造方法および製造装置
JP2008504443A (ja) 2004-06-30 2008-02-14 ワン ナン ワン 高品質化合物半導体材料を製造するための成膜方法
JP2010222232A (ja) 2009-02-26 2010-10-07 Kyocera Corp 単結晶体、単結晶基板、ならびに単結晶体の製造方法および製造装置
CN102108547A (zh) 2010-12-31 2011-06-29 东莞市中镓半导体科技有限公司 一种多片大尺寸氢化物气相外延方法和装置
JP2011256082A (ja) 2010-06-10 2011-12-22 Sumitomo Electric Ind Ltd ＧａＮ結晶自立基板およびその製造方法
JP2013058741A (ja) 2011-08-17 2013-03-28 Hitachi Cable Ltd 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002316892A (ja) 2001-04-12 2002-10-31 Matsushita Electric Ind Co Ltd 気相成長装置
JP2003306398A (ja) 2002-04-09 2003-10-28 Denso Corp 炭化珪素単結晶の製造方法および製造装置
JP2008504443A (ja) 2004-06-30 2008-02-14 ワン ナン ワン 高品質化合物半導体材料を製造するための成膜方法
JP2010222232A (ja) 2009-02-26 2010-10-07 Kyocera Corp 単結晶体、単結晶基板、ならびに単結晶体の製造方法および製造装置
JP2011256082A (ja) 2010-06-10 2011-12-22 Sumitomo Electric Ind Ltd ＧａＮ結晶自立基板およびその製造方法
CN102108547A (zh) 2010-12-31 2011-06-29 东莞市中镓半导体科技有限公司 一种多片大尺寸氢化物气相外延方法和装置
JP2013058741A (ja) 2011-08-17 2013-03-28 Hitachi Cable Ltd 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート

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