JP6994510B2 - 半導体素子及びこれを含む発光素子パッケージ - Google Patents

半導体素子及びこれを含む発光素子パッケージ Download PDF

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JP6994510B2
JP6994510B2 JP2019536303A JP2019536303A JP6994510B2 JP 6994510 B2 JP6994510 B2 JP 6994510B2 JP 2019536303 A JP2019536303 A JP 2019536303A JP 2019536303 A JP2019536303 A JP 2019536303A JP 6994510 B2 JP6994510 B2 JP 6994510B2
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JP2020504909A (ja
JP2020504909A5 (enExample
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ナ，チョンホ
クォン，オミン
ソン，チュンオ
オ，チョンタク
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スージョウ レキン セミコンダクター カンパニー リミテッド
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Priority claimed from KR1020170001461A external-priority patent/KR102623610B1/ko
Priority claimed from KR1020170001904A external-priority patent/KR102606859B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
JP2019536303A 2017-01-04 2018-01-04 半導体素子及びこれを含む発光素子パッケージ Active JP6994510B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020170001461A KR102623610B1 (ko) 2017-01-04 2017-01-04 반도체 소자 및 이를 갖는 발광소자 패키지
KR10-2017-0001461 2017-01-04
KR10-2017-0001904 2017-01-05
KR1020170001904A KR102606859B1 (ko) 2017-01-05 2017-01-05 반도체 소자 및 이를 포함하는 반도체 소자 패키지
PCT/KR2018/000186 WO2018128419A1 (ko) 2017-01-04 2018-01-04 반도체 소자 및 이를 포함하는 발광소자 패키지

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JP2020504909A JP2020504909A (ja) 2020-02-13
JP2020504909A5 JP2020504909A5 (enExample) 2021-02-12
JP6994510B2 true JP6994510B2 (ja) 2022-02-04

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JP2019536303A Active JP6994510B2 (ja) 2017-01-04 2018-01-04 半導体素子及びこれを含む発光素子パッケージ

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US (1) US10971649B2 (enExample)
EP (1) EP3567642B1 (enExample)
JP (1) JP6994510B2 (enExample)
CN (1) CN110494992B (enExample)
WO (1) WO2018128419A1 (enExample)

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CN113228309B (zh) * 2019-11-26 2022-04-29 重庆康佳光电技术研究院有限公司 发光二极管结构
CN111769187B (zh) * 2020-07-31 2023-05-23 佛山紫熙慧众科技有限公司 一种紫外led芯片结构
CN112289872A (zh) * 2020-10-29 2021-01-29 上海微波技术研究所（中国电子科技集团公司第五十研究所） 倒梯形槽面结构的阻挡杂质带探测器及其制备方法
US12484343B2 (en) 2021-02-17 2025-11-25 Seoul Viosys Co., Ltd. Single chip multi band light emitting diode, light emitting device and light emitting module having the same
US12336331B2 (en) 2021-06-30 2025-06-17 Seoul Viosys Co., Ltd. Light emitting diode
US20230076963A1 (en) * 2021-08-24 2023-03-09 Seoul Viosys Co., Ltd. Light emitting diode and light emitting device having the same
US20230098895A1 (en) * 2021-08-24 2023-03-30 Seoul Viosys Co., Ltd. Light emitting diode and light emitting device having the same
EP4447134A4 (en) * 2021-12-10 2025-11-19 Seoul Viosys Co Ltd LIGHT-ELECTRICAL DIODE AND LIGHT-ELECTRICAL ELEMENT EQUIPPED THEREON

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JP2019519101A (ja) 2016-05-20 2019-07-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 改善された効率を有する部品およびその製造方法

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JP2017135215A (ja) 2016-01-26 2017-08-03 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
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JP2020504909A (ja) 2020-02-13
EP3567642B1 (en) 2023-12-13
EP3567642A1 (en) 2019-11-13
US10971649B2 (en) 2021-04-06
EP3567642A4 (en) 2020-06-24
CN110494992A (zh) 2019-11-22
CN110494992B (zh) 2022-11-01
US20190348567A1 (en) 2019-11-14
WO2018128419A1 (ko) 2018-07-12

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