JP6986999B2 - ボルテージレギュレータ - Google Patents
ボルテージレギュレータ Download PDFInfo
- Publication number
- JP6986999B2 JP6986999B2 JP2018047825A JP2018047825A JP6986999B2 JP 6986999 B2 JP6986999 B2 JP 6986999B2 JP 2018047825 A JP2018047825 A JP 2018047825A JP 2018047825 A JP2018047825 A JP 2018047825A JP 6986999 B2 JP6986999 B2 JP 6986999B2
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- Prior art keywords
- voltage
- output
- transistor
- circuit
- detection circuit
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-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
- G05F1/571—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45648—Indexing scheme relating to differential amplifiers the LC comprising two current sources, which are not cascode current sources
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Control Of Eletrric Generators (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
図1は、本発明の実施形態のボルテージレギュレータを示す回路図である。
出力トランジスタ10は、ソースが電圧入力端子1に接続され、ドレインが電圧出力端子2に接続され、ゲートが誤差増幅器15の出力端子に接続される。抵抗11と抵抗12は、電圧出力端子2と接地端子3の間に直列に接続される。抵抗11と抵抗12の接続点は、帰還電圧Vfbを出力するノードN1とする。誤差増幅器15は、非反転入力端子にノードN1が接続され、反転入力端子に基準電圧回路13の出力端子が接続される。非レギュレーション検出回路16は、第一入力端子に基準電圧回路14の出力端子が接続され、第二入力端子に誤差増幅器15の出力端子が接続される。オーバーシュート検出回路17は、第一入力端子に非レギュレーション検出回路16の出力端子が接続され、第二入力端子にノードN1が接続され、出力端子がPMOSトランジスタ18のゲートに接続される。PMOSトランジスタ18は、ソースが電圧入力端子1に接続され、ドレインが出力トランジスタ10のゲートに接続される。
基準電圧回路13は、接地端子3の電圧Vssを基準とした基準電圧Vref1を出力する。基準電圧回路14は、接地端子3の電圧Vssを基準とした基準電圧Vref2を出力する。
図2は、本実施形態のボルテージレギュレータの他の例を示す回路図である。
2 電圧出力端子
3 接地端子
10 出力トランジスタ
13、14 基準電圧回路
15 誤差増幅器
16 非レギュレーション検出回路
17 オーバーシュート検出回路
Claims (5)
- オーバーシュート抑制機能を備えたボルテージレギュレータであって、
出力トランジスタが出力する出力電圧に基いた帰還電圧を出力する帰還回路と、
前記帰還電圧と基準電圧が入力され、前記出力トランジスタのゲート電圧を制御する誤差増幅器と、
前記出力トランジスタの出力電流に応じた電流で動作する差動増幅回路と、前記差動増幅回路の出力端子に接続された出力インバータを有し、前記出力トランジスタのゲート電圧に基づき前記ボルテージレギュレータの非レギュレーション状態を検出する非レギュレーション検出回路と、
前記非レギュレーション検出回路から非レギュレーションを検出したことを示す信号を受けるとオーバーシュート検出動作を有効にするオーバーシュート検出回路を有するオーバーシュート抑制回路と、
を備えたことを特徴とするボルテージレギュレータ。 - 前記非レギュレーション検出回路は、
前記出力トランジスタとゲートを共通にするセンストランジスタを備え、
前記センストランジスタが前記差動増幅回路の動作電流を流す
ことを特徴とする請求項1に記載のボルテージレギュレータ。 - 前記非レギュレーション検出回路は、
前記センストランジスタと直列に第一の定電流源を備えた
ことを特徴とする請求項2に記載のボルテージレギュレータ。 - 前記非レギュレーション検出回路は、
前記差動増幅回路の出力端子に接続された第二の定電流源を備えた
ことを特徴とする請求項1〜3のいずれかに記載のボルテージレギュレータ。 - 前記非レギュレーション検出回路は、
前記出力トランジスタの出力電流に応じた電流で動作する基準電圧回路を備えた
ことを特徴とする請求項1〜4のいずれかに記載のボルテージレギュレータ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018047825A JP6986999B2 (ja) | 2018-03-15 | 2018-03-15 | ボルテージレギュレータ |
TW108103659A TWI801493B (zh) | 2018-03-15 | 2019-01-31 | 電壓調整器 |
US16/272,700 US10571941B2 (en) | 2018-03-15 | 2019-02-11 | Voltage regulator |
CN201910112397.6A CN110275566B (zh) | 2018-03-15 | 2019-02-13 | 电压调节器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018047825A JP6986999B2 (ja) | 2018-03-15 | 2018-03-15 | ボルテージレギュレータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019160011A JP2019160011A (ja) | 2019-09-19 |
JP6986999B2 true JP6986999B2 (ja) | 2021-12-22 |
Family
ID=67904548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018047825A Active JP6986999B2 (ja) | 2018-03-15 | 2018-03-15 | ボルテージレギュレータ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10571941B2 (ja) |
JP (1) | JP6986999B2 (ja) |
CN (1) | CN110275566B (ja) |
TW (1) | TWI801493B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220033850A (ko) * | 2020-09-10 | 2022-03-17 | 삼성전자주식회사 | 집적회로 장치 |
KR20220131063A (ko) * | 2021-03-19 | 2022-09-27 | 에스케이하이닉스 주식회사 | 저전압 강하 레귤레이터 |
JP2023013178A (ja) * | 2021-07-15 | 2023-01-26 | 株式会社東芝 | 定電圧回路 |
WO2023220660A2 (en) * | 2022-05-10 | 2023-11-16 | Opteon Corporation | Wide-range, precision supply circuit |
US11843386B1 (en) * | 2022-08-30 | 2023-12-12 | Apple Inc. | Latched comparator circuitry with reduced clock feedthrough |
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-
2018
- 2018-03-15 JP JP2018047825A patent/JP6986999B2/ja active Active
-
2019
- 2019-01-31 TW TW108103659A patent/TWI801493B/zh active
- 2019-02-11 US US16/272,700 patent/US10571941B2/en active Active
- 2019-02-13 CN CN201910112397.6A patent/CN110275566B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20190286180A1 (en) | 2019-09-19 |
TW201939193A (zh) | 2019-10-01 |
US10571941B2 (en) | 2020-02-25 |
JP2019160011A (ja) | 2019-09-19 |
TWI801493B (zh) | 2023-05-11 |
CN110275566B (zh) | 2021-12-28 |
CN110275566A (zh) | 2019-09-24 |
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