JP6982597B2 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
JP6982597B2
JP6982597B2 JP2019118165A JP2019118165A JP6982597B2 JP 6982597 B2 JP6982597 B2 JP 6982597B2 JP 2019118165 A JP2019118165 A JP 2019118165A JP 2019118165 A JP2019118165 A JP 2019118165A JP 6982597 B2 JP6982597 B2 JP 6982597B2
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JP
Japan
Prior art keywords
target
substrate
vacuum chamber
magnet
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019118165A
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English (en)
Japanese (ja)
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JP2021004390A (ja
Inventor
裕夫 大久保
大士 小林
貴裕 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2019118165A priority Critical patent/JP6982597B2/ja
Priority to TW109105168A priority patent/TWI762872B/zh
Priority to KR1020200040402A priority patent/KR102478616B1/ko
Priority to CN202010542198.1A priority patent/CN112144026B/zh
Publication of JP2021004390A publication Critical patent/JP2021004390A/ja
Application granted granted Critical
Publication of JP6982597B2 publication Critical patent/JP6982597B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2019118165A 2019-06-26 2019-06-26 スパッタリング装置 Active JP6982597B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019118165A JP6982597B2 (ja) 2019-06-26 2019-06-26 スパッタリング装置
TW109105168A TWI762872B (zh) 2019-06-26 2020-02-18 濺射裝置
KR1020200040402A KR102478616B1 (ko) 2019-06-26 2020-04-02 스퍼터링 장치
CN202010542198.1A CN112144026B (zh) 2019-06-26 2020-06-15 溅射装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019118165A JP6982597B2 (ja) 2019-06-26 2019-06-26 スパッタリング装置

Publications (2)

Publication Number Publication Date
JP2021004390A JP2021004390A (ja) 2021-01-14
JP6982597B2 true JP6982597B2 (ja) 2021-12-17

Family

ID=73891899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019118165A Active JP6982597B2 (ja) 2019-06-26 2019-06-26 スパッタリング装置

Country Status (4)

Country Link
JP (1) JP6982597B2 (ko)
KR (1) KR102478616B1 (ko)
CN (1) CN112144026B (ko)
TW (1) TWI762872B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113481478A (zh) * 2021-06-23 2021-10-08 合肥联顿恪智能科技有限公司 一种溅射镀膜装置及成膜方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07331433A (ja) * 1994-06-07 1995-12-19 Hitachi Ltd スパッタ装置
JPH09111448A (ja) * 1995-10-16 1997-04-28 Ulvac Japan Ltd スパッタ装置
JPH1192927A (ja) * 1997-09-17 1999-04-06 Hitachi Ltd マグネトロンスパッタ装置
JP3649933B2 (ja) * 1999-03-01 2005-05-18 シャープ株式会社 マグネトロンスパッタ装置
JP2000273628A (ja) * 1999-03-29 2000-10-03 Matsushita Electric Ind Co Ltd スパッタリング方法およびその装置
JP2001335930A (ja) * 2000-05-25 2001-12-07 Matsushita Electric Ind Co Ltd 薄膜形成装置
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
JP4713853B2 (ja) * 2004-07-07 2011-06-29 株式会社アルバック マグネトロンカソード電極及びマグネトロンカソード電極を用いたスパッタリング方法
JP5049561B2 (ja) * 2006-11-17 2012-10-17 株式会社アルバック マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置
WO2009116430A1 (ja) * 2008-03-17 2009-09-24 株式会社アルバック マグネトロンスパッタリング装置及びマグネトロンスパッタリング方法
JP5301021B2 (ja) * 2011-09-06 2013-09-25 出光興産株式会社 スパッタリングターゲット
JP6612448B2 (ja) * 2016-06-21 2019-11-27 株式会社アルバック ターゲット装置、スパッタリング装置
WO2019049472A1 (ja) * 2017-09-07 2019-03-14 株式会社アルバック スパッタリング装置

Also Published As

Publication number Publication date
TWI762872B (zh) 2022-05-01
KR102478616B1 (ko) 2022-12-16
JP2021004390A (ja) 2021-01-14
CN112144026B (zh) 2022-09-09
TW202100780A (zh) 2021-01-01
CN112144026A (zh) 2020-12-29
KR20210001904A (ko) 2021-01-06

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