JP6982597B2 - Sputtering equipment - Google Patents

Description

The present invention relates to a sputtering technique, and more particularly to a sputtering technique for making the in-plane characteristic distribution of a metal thin film uniform.

Thin film formation by a sputtering method is a widely used technique, and in recent years, in order to form a thin film on a large substrate, a technique for forming a thin film having a uniform characteristic distribution on a large area substrate has been required.

In the plasma device 102 of FIG. 9 (plan view, EE line, and FF line cross-sectional view), the target 113 is arranged on the front surface of the cathode electrode 112, and the outer peripheral magnet 125 and the inner magnet 126 are yoke 127 on the back surface. A plurality of magnet devices 115 _{1 to 115 4} arranged in the above are provided, and when the target 113 is sputtered, a thin film is formed on the surface of the substrate 116 arranged on the substrate arrangement portion 114 facing the target 113. Will be done.

An anode electrode 117 is arranged on the outer periphery of the substrate 116 so that the plasma formed on the surface of the target 113 becomes uniform.

However the substrate 116 is further large, thin film take it targets 113 and magnet apparatus 115 ₁ to 115 ₄ was been large, and the area close to the short side of the substrate 116, in the meantime the central portion, which is formed The difference in the characteristics of is getting bigger.

If the resistance value of the thin film in the short side portion and the resistance value of the thin film in the central portion are significantly different, the emission distribution of the light emitting layer formed on the substrate surface will be different, resulting in a screen having uneven brightness.

The following patent document describes a magnetron sputtering apparatus for large substrates in which a ground potential electrode linked to a movable magnetron plasma is arranged to make the film quality and film thickness uniform.

Japanese Unexamined Patent Publication No. 07-331433

The present invention has been created to solve the above-mentioned inconveniences of the prior art, and an object thereof is to make the characteristic distribution of a thin film formed on the surface of a large substrate uniform, and particularly for an elongated magnetron magnet. The purpose is to reduce the difference between the thin film characteristics in the region near the edge of the substrate near the edges and the thin film characteristics in the region near the center of the substrate.

Further, an object of the present invention is to reduce the weight of the vacuum chamber on the substrate side so that the vacuum chamber can be opened and closed easily.

In order to solve the above problems, the present invention comprises a vacuum chamber, a target arranged inside the vacuum chamber, a cathode electrode arranged on the back surface side of the target and connected to a sputtering power supply, and a back surface of the cathode electrode. Each of the magnet devices has a plurality of magnet devices arranged on the side, a substrate arrangement portion on which the substrate is arranged, and a ring-shaped anode electrode connected to a ground potential and covering the outer periphery of the substrate. Is provided with an elongated ring-shaped outer peripheral magnet and an inner magnet arranged inside the outer peripheral magnet, and the magnetic flux formed between the outer peripheral magnet and the inner magnet inside the outer peripheral magnet leaks to the surface of the target. In a sputtering device in which the target is sputtered to form a thin film on the surface of the substrate, the outer peripheral magnet and the inner magnet inside the sputtering apparatus are separated from each other, and between the outer peripheral magnet and the inner magnet inside the outer peripheral magnet. The plasma region, which is a region of the above, is formed into an elongated ring shape, and an electrode plate connected to the ground potential is arranged between both ends of the plasma region and the plane on which the surface of the substrate is located, and the anode electrode The TB distance between the surface of the electrode plate and the surface of the target is shorter than the TA distance between the surface of the target and the surface of the target, and is located along both ends of the plasma region of the target. It is a sputtering device in which the electrode plate is arranged on the two sides.
In the present invention, the vacuum chamber can be separated into a target-side vacuum chamber in which the target is arranged and a substrate-side vacuum chamber in which the anode electrode is arranged inside. In a state where the substrate-side vacuum chamber is in close contact and connected, the target and the anode electrode are arranged vertically, and the weight of the electrode plate is supported by the target-side vacuum chamber, and the target-side is supported. When the vacuum chamber and the substrate-side vacuum chamber are separated, the sputtering apparatus is such that the substrate-side vacuum chamber moves while the target-side vacuum chamber is stationary.
The present invention is a sputtering apparatus in which the TB distance is larger than 10% and smaller than 90% of the TS distance between the surface of the target and the surface of the substrate arranged on the substrate arrangement portion.
In the present invention, the target is a flat metal molybdenum plate, and the thin film is a metal molybdenum thin film, which is a sputtering apparatus.

On the surface of the substrate, the difference in thin film characteristics between the location near the end of the elongated magnetron magnet and the location in the center of the substrate becomes smaller, and as a result, the characteristics of the thin film formed on the rectangular substrate are in the region near the short side. The characteristics and the characteristics of the region near the center sandwiched between the regions become uniform.

Since the electrode plate and the support member are supported by the vacuum chamber on the target side and the inside of the vacuum chamber on the substrate side is lightened, the opening and closing work becomes easy when the vacuum chamber on the substrate side is moved to open and close the vacuum chamber. ..

Sputtering apparatus of the present invention A plan view for explaining the internal structure of the sputtering apparatus of the present invention, a cross-sectional view taken along the line AA, and a cross-sectional view taken along the line BB. A plan view, a CC line cut section, and a DD line cut section for explaining the magnet device used in the present invention. (a)-(c): Cross-sectional view for explaining the operation of the magnet device. The figure for demonstrating another example of this invention. Schematic perspective view of the sputtering apparatus of the present invention Bar graph for comparing substrate temperature distribution Sputtering device with electrode plate attached to anode electrode The figure for demonstrating the prior art sputtering apparatus.

Reference numeral 2 in FIG. 1 is a sputtering apparatus of the present invention, which has a vacuum chamber 11. FIG. 2 is a plan view of a portion inside the outer periphery of the anode electrode 17, which will be described later, and a cross-sectional view taken along the line AA and a cross-sectional view taken along the line BB.

A rectangular target 13 is arranged inside the vacuum chamber 11, and a cathode electrode 12 is arranged on the back surface side of the target 13.

The front surface of the cathode electrode 12 is in contact with the back surface of the target 13.

On the back side of the cathode electrode 12 is disposed magnet case 51, the magnet device 15 ₁ to 15 ₄ a plurality of (four in this case) is disposed in the interior of the magnet case 51. Magnet device 15 ₁ to 15 ₄ is called magnetron magnet.

Magnet device 15 ₁ to 15 ₄ disposed on the back side of the cathode electrode 12 is basically the same shape, the same size, in FIG. 3, a plan view of one magnet device 15 ₁ to 15 _4, A cross-sectional view taken along the line CC and a cross-sectional view taken along the line DD are shown.

Magnet device 15 ₁ to 15 ₄ and the outer peripheral magnet 25 of ring shape, it has an inner magnet 26 arranged linear shape in the peripheral magnet 25, respectively to the outer peripheral magnet 25 and inner magnet 26 are elongated, each magnet device 15 ₁ to 15 ₄ become elongated, each have a longitudinal direction.

Here, the distance between the back surface of the peripheral magnet 25 and the target 13 of each magnet device 15 ₁ to 15 ₄ are equal, also the rear surface of each magnet device 15 ₁ to 15 ₄ of the inner magnet 26 and the target 13 has also been equally the distance between the, present invention is not limited thereto, in order to ensure uniform distribution of the film thickness distribution and the film quality, the back side of the magnet device 15 ₁ to 15 ₄ and the target 13 or distance are different between, between the back surface of the magnet device 15 ₁ to 15 ₄ and the target 13 may be arranged non-parallel.

Further, here, the distance between the back surface of the peripheral magnet 25 and the target 13 of each magnet device 15 ₁ to 15 ₄ have been equal the distance between the rear surface of the inner magnet 26 and the target 13, the among the magnet device 15 ₁ to 15 _4, the or different magnet device 15 ₁ to 15 ₄ distanced from the back surface of the inner magnet 26 and the target 13, the distance between the rear surface of the outer peripheral magnet 25 and the target 13 different magnet device 15 ₁ to 15 ₄ may be included.

Of the two magnetic poles of the outer peripheral magnet 25, one magnetic pole is arranged toward the cathode electrode 12, the other magnetic pole is directed toward the opposite side of the cathode electrode 12, and is arranged in contact with the surface of the yoke 27. Of the two magnetic poles of the inner magnet 26, one magnetic pole is arranged toward the cathode electrode 12, and the other magnetic pole is directed to the side opposite to the cathode electrode 12 with respect to the surface of the yoke 27. They are placed in contact with each other.

One of the magnetic poles directed toward the cathode electrode 12 of the outer peripheral magnet 25 and the magnetic pole directed toward the cathode electrode 12 of the inner magnet 26 are N poles and the other is S poles, and between the magnetic poles directed toward the cathode electrode 12. The magnetic flux formed in the above is leaked to the surface of the target 13 and is curved in an arch shape to increase the electron density on the surface of the target 13.

A table 54 is arranged at a position facing the surface of the target 13 in the vacuum chamber 11, and a substrate arrangement portion 14 is arranged on the table 54.

The substrate arranging portion 14 has a rectangular shape, and a rectangular substrate 16 to be formed is arranged on the substrate arranging portion 14.

The substrate 16 is smaller than the target 13, and it is assumed that the inside and the outside are determined by the positional relationship when the surface of the substrate 16 on the substrate arrangement portion 14 is projected onto the plane where the surface is located. It is arranged inside the outer circumference of the target 13.

The target 13 and the substrate 16 are arranged so that the long side of the target 13 and the long side of the substrate 16 are parallel to each other, and the surface of the target 13 and the surface of the substrate 16 are also parallel to each other. ..

Length in the longitudinal direction of the magnet device 15 ₁ to 15 ₄ is substantially the same length as the longitudinal length of the target 13, the long sides of the substrate 16 is shorter than the longitudinal length of the target 13, also, the long side of the substrate 16 is shorter than the longitudinal length of the magnet device 15 ₁ to 15 _4.

Each magnet assembly 15 _{1-15 4,} the back side of the yoke 27 is disposed on the moving plate 52 in contact with the movable plate 52.

Each magnet assembly 15 _{1-15 4} longitudinal direction are parallel to one another, are parallel to the long sides of the target 13 and the substrate 16, they are arranged in a line in the direction of the short side extends.

A moving device 53 is arranged outside the vacuum chamber 11, and when the moving device 53 operates, the moving plate 52 moves along the front surface of the target 13 on the back surface side of the target 13, and each magnet device 15 ₁ to 15 ₄ Moves with the moving plate 52.

Flux leaking to the surface of the target 13 is moved with the movement of the magnet device 15 ₁ to 15 _4.

Each magnet assembly 15 _{1-15 4} during the movement, the change in distance between the back surface of the peripheral magnet 25 and the target 13 fixed distance rather is maintained. Further, the distance between the inner magnet 26 and the back surface of the target 13 does not change, and a constant distance is maintained.

Thus, each magnet 15 _{1-15 4} with the movement of the moving plate 52, together to move the back surface parallel to the plane of the target 13. 4 (a) shows a state in which each of the magnet device 15 ₁ to 15 ₄ are each magnet device 15 ₁ to 15 ₄ are located in the center of the range of movement, Fig. (B) is located in the drawing right end The state shown in the figure (c) is located at the left end of the drawing, and the state is repeatedly moved between the state shown in the figure (b) and the state shown in the figure (c).

Next, an anode electrode 17 connected to the ground potential is arranged between the substrate 16 and the target 13.

The anode electrode 17 has a square ring shape, and an opening 19 is formed in the center. The outer circumference and the inner circumference of the anode electrode 17 have a rectangular shape, and the outer circumference of the anode electrode 17 is located outside the outer circumference of the substrate 16 arranged in the substrate arrangement portion 14.

In this example, the inner circumference of the anode electrode 17 is located inside the outer circumference of the substrate 16, and the two long sides of the square ring shape of the anode electrode 17 are on the long sides of the substrate 16. The two short sides are arranged on the short sides of the substrate 16, the outer periphery of the substrate 16 on the substrate arrangement portion 14 is covered by the anode electrode 17, and the bottom surface of the opening 19 is from the outer periphery of the substrate 16. The inner part is exposed.

A vacuum exhaust device 21 and a gas introduction device 23 are connected to the vacuum tank 11, the vacuum tank 11 is evacuated by the vacuum exhaust device 21, and a vacuum atmosphere is formed inside the vacuum tank 11.

A sputtering power supply 22 electrically connected to the cathode electrode 12 is provided outside the vacuum chamber 11, and a sputtering gas is introduced from the gas introduction device 23 into the inside of the vacuum chamber 11 in which a vacuum atmosphere is formed. Is stabilized at a predetermined pressure, and a sputtering voltage is applied from the sputtering power supply 22 to the cathode electrode 12.

Target 13 is a plate-shaped target metal is formed into a plate shape, to form a plasma of the sputtering gas in the vicinity of the surface of the target 13 while moving the magnet device 15 ₁ to 15 _4.

The positive ions of the sputtering gas in the plasma are accelerated, the particles of the sputtering gas enter the target 13, the target 13 is sputtered, and the particles of the substance constituting the target 13 are released from the surface of the target 13 as sputtering particles, and the substrate is used. It flies toward 16 and reaches the surface of the substrate 16 to grow a thin film.

When a thin film having a predetermined film thickness is formed on the surface of the substrate 16, the substrate arranging portion 14 and the substrate 16 are carried out of the vacuum chamber 11, and the substrate arranging portion 14 on which the undeposited substrate 16 is arranged is the vacuum chamber 11. It is carried inside the.

As described above, the thin film is formed on the surface of the substrate 16 according to the present invention, but the resistance value of the metal thin film formed on the surface of the large substrate 16 differs depending on the position of the substrate 16.

Distribution of the resistance value is closely related to the intensity distribution of the plasma, when describing the plasma of the sputtering apparatus 2, first, positioned between the outer magnet 25 and inner magnet 26 of the magnet system 15 _{1-15 4} The feature of magnetron sputtering is that a large intensity plasma is formed on the surface of the target 13.

Peripheral magnet 25 of the magnet system 15 _{1-15 4} is a ring shape elongated in order to increase the area of the target to be sputtered, from the inner magnet 26 is linear in shape, the outer peripheral magnet 25 and the inner The gap between the magnet 26 and the magnet 26 has an elongated ring shape. Since the plasma is the same shape as the gap, the plasma intensity is large to be formed is also formed in a ring shape to the magnet device 15 ₁ to 15 every _4.

Plasma ring-shaped elongated shape is towards the end it is known that plasma intensity is greater than the linear portion, in particular, the ends of each magnet device 15 ₁ to 15 ₄ are arranged in a straight line, When the ends of a plurality of elongated ring-shaped plasmas are arranged in a straight line and arranged in parallel with each other, the plasma intensity of the portion where the ends of the ring-shaped plasmas are arranged is the ring-shaped shape. It becomes larger than the plasma intensity of the long side part of the plasma.

When the plasma at the arranged ends grows a thin film near the short side of the substrate 16, and the long side portion of the plasma grows the thin film near the long side of the substrate 16, the center and short sides of the surface of the substrate 16 The characteristics of the thin film differ between the portion and the long side portion.

In parallel with each magnet device 15 ₁ to 15 ₄ of the end portion is arranged regions, the short sides of the anode electrode 17 are arranged, on the two short side portions of the anode electrode 17, the edge of the substrate 16 The electrode plates 28a and 28b are arranged on the outer side of the surface, respectively.

The unused target 13 before sputtering has the cathode electrode 12, the electrode plates 28a and 28b, and the anode electrode 17 parallel to each other.

The two electrode plates 28a and 28b are parallel to each other and longer than the short side of the target 13, and are parallel to the short sides 33a and 33b of the target 13, the short side of the anode electrode 17, and the short side of the cathode electrode 12. It has edges 31a, 31b, 32a, 32b of the book, respectively.

Of the two edges 31a, 31b, 32a, 32b of the electrode plates 28a, 28b parallel to the short sides 33a, 33b of the target 13, one of the edges 31a, 31b is located outside the short side of the target 13. However, the other edges 32a and 32b are located closer to the center of the target 13 than the short side.

Therefore, the vicinity of the short sides 33a and 33b of the target 13 is covered inward by the electrode plates 28a and 28b by a certain distance C from the short sides 33a and 33b.

The cathode electrode 12 is fixed to the wall surface of the vacuum chamber 11 via an insulating plate 24, and the cathode electrode 12 and the vacuum chamber 11 are insulated by the insulating plate 24. A ring-shaped protective ring 36 is provided on the wall surface of the vacuum chamber 11, and the target 13 is arranged inside the protective ring 36. The outer peripheral surface of the target 13 is arranged at a predetermined distance from the inner peripheral surface of the adhesive ring 36.

The supports 29a and 29b are attached to the surface of the portion of the anti-adhesion ring 36 whose side surface faces the side surface where the short sides 33a and 33b of the target 13 are located, and the electrode plates 28a and 28b are the supports. It is attached to 29a and 29b.

The electrode plates 28a and 28b, the adhesive ring 36, and the supports 29a and 29b have conductivity, and the electrode plates 28a and 28b electrically attach to the adhesive ring 36 via the supports 29a and 29b. It is connected.

The vacuum chamber 11 is connected to the ground potential, the adhesion ring 36 is in contact with the vacuum chamber 11 and is connected to the ground potential, and therefore the electrode plates 28a and 28b are connected to the ground potential. The anode electrode 17 is also connected to the ground potential.

The area between the outer peripheral magnet 25 of the magnet system 15 _{from 1} to 15 ₄ and the inner magnet 26 located inside and respectively the plasma region 10 of the magnet device 15 ₁ to 15 _4, each magnet 15 _{1-15 Both ends of the outer peripheral magnet 25 of 4} are curved in a semicircular shape, and both ends of the plasma region 10 are also made semicircular accordingly. As a result, the outer peripheral magnet 25 and the plasma region 10 each have a track shape. ..

Longitudinal length of the plasma region 10 of each magnet device 15 ₁ to 15 ₄ are equal, the plasma region 10 is the distance between the plane in which the anode electrode 17 is positioned to be equal, each plasma region 10 The curved portion of one end of the curved portions at both ends is arranged in a horizontal row, and the curved portion of the opposite end is also arranged in a horizontal row.

Of the curved portions at both ends of each plasma region 10, one electrode plate 28a is arranged between the curved portions that are arranged in a horizontal row at one end and the plane on which the surface of the substrate 16 is located. Another electrode plate 28b is arranged between the curved portion which is the opposite end portion and is lined up in a horizontal row and the plane where the surface of the substrate 16 is located.

The surface of the target 13 faces the long side portion of the anode electrode 17 on the long side portion of the anode electrode 17, and faces the surfaces of the electrode plates 28a and 28b on the short side portion of the anode electrode 17.

The distance between the surface of the target 13 and the surface of the substrate 16 is the TS distance, the distance between the surface of the target 13 and the surface of the long side portion of the anode electrode 17 is the TA distance, and the surface of the target 13 and the surfaces of the electrode plates 28a and 28b. Assuming that the distance between and is the TB distance, the following three equations are obtained.
TA <TS, TB <TS, TB <TA

The member having the ground potential closest to the target 13 at the position directly beside the long side of the substrate 16 is the surface of the anode electrode 17 facing the target 13, and the member having the ground potential closest to the target 13 and the target 13 at the position directly beside the long side of the substrate 16. It is separated from the surface of the potential member by the TA distance.

The member having the ground potential closest to the target 13 at the position just beside the short side of the substrate 16 is the surface of the electrode plates 28a and 28b facing the target 13, and the member having the ground potential closest to the target 13 and the target 13 at the position just beside the short side of the substrate 16. It is separated from the surface of a member having a close ground potential by a TB distance.

Therefore, the distance between the target 13 and the surface of the member having the ground potential closest to the target 13 is shorter in the sideways position on the short side than in the sideways position on the long side of the substrate 16.

In particular, the electrode plates 28a and 28b shorten the distance between the target 13 and the ground potential outside the edge of the substrate 16, and the electrode plates 28a and 28b attract plasma inside the edge of the substrate 16. On the outside of the edge of the substrate 16, the plasma intensity outside the short side of the substrate 16 on which the electrode plates 28a and 28b are located is increased, and as a result, the plasma intensity on the substrate 16 near the short side of the substrate 16 is decreased. .. In short, in the absence of the electrode plates 28a and 28b, the plasma in the portion near both ends of the plasma region 10 in the longitudinal direction on the substrate 16 has a higher intensity than the plasma in the other portions on the substrate 16, but the electrode plates 28a and 28b By providing Is homogenized.

If the TB distance is not larger than 10% of the TS distance between the surface of the target 13 and the surface of the substrate 16 arranged on the substrate arrangement portion 14, the characteristic distribution is rather deteriorated, and if it is not smaller than 90%, the effect is weak. It has been confirmed that it will be.

The electrode plates 28a and 28b are provided on the curved portions at both ends of the plasma region 10, and the distance between the members of the ground potential when facing the surface of the target 13 is between the electrode plates 28a and 28b and the target 13. Is the shortest. As described above, the plasma intensity on the electrode plates 28a and 28b increases.

The electrode plates 28a and 28b are arranged outside the substrate 16, and as a result of the increase in plasma intensity outside the substrate 16, plasma is generated near the edge of the substrate 16 on the substrate 16 where the electrode plates 28a and 28b are close to each other. Since the intensity is reduced, the plasma intensity on the substrate 16 is made uniform, and the resistance value distribution in the surface of the substrate 16 is made uniform.

Next, the vacuum chamber 11 of the present invention will be described. The vacuum chamber 11 of the present invention is composed of a target-side vacuum chamber 11a and a substrate-side vacuum chamber 11b.

In the present invention, the cathode electrode 12, the target 13, the anticorrosion ring 36, and the anode electrode 17 are vertically arranged, and the cathode electrode 12 is vertically attached to the vertical wall surface of the target-side vacuum chamber 11a. It is attached via the insulating plate 24. The protective ring 36 is attached to the same wall surface.

The target 13 is provided on a surface of the cathode electrode 12 opposite to the surface of the cathode electrode 12 in contact with the insulating plate 24, and is located on the inner circumference of the adhesive ring 36.

The electrode plates 28a and 28b are also attached to the wall surface to which the cathode electrode 12, the target 13 and the adhesion ring 36 are fixed via the supports 29a and 29b and the adhesion ring 36. Therefore, the weights of the electrode plates 28a and 28b are supported by the target-side vacuum chamber 11a.

During sputtering, the target-side vacuum chamber 11a and the substrate-side vacuum chamber 11b are airtightly connected, and a vertical anode electrode 17 is provided inside the substrate-side vacuum chamber 11b, and the substrate arrangement portion 14 is provided. And the substrate 16 arranged in the substrate arranging portion 14 are carried into the inside from the outside of the vacuum chamber 11 in a vertically formed state, and are between the anode electrode 17 and the vertical wall surface of the substrate side vacuum chamber 11b. Is placed in.

At the time of maintenance, the inside of the vacuum chamber 11 is set to normal pressure, and the target-side vacuum chamber 11a and the substrate-side vacuum chamber 11b are separated as shown in the schematic perspective view of FIG.

Reference numeral 55 in FIG. 6 is a pedestal, and the target-side vacuum chamber 11a is provided on the pedestal 55 and is fixed to the floor surface. On the other hand, the substrate-side vacuum chamber 11b is not provided on the pedestal 55, but is airtightly attached to the target-side vacuum chamber 11a. In FIG. 6, the supports 29a and 29b are omitted.

FIG. 6 shows a state in which the substrate-side vacuum chamber 11b is moved without moving the target-side vacuum chamber 11a to separate the target-side vacuum chamber 11a and the substrate-side vacuum chamber 11b, and the supports 29a and 29b. The weights of the electrode plates 28a and 28b are supported by the pedestal 55 via the target-side vacuum chamber 11a.

FIG. 8 shows sputtering when the electrode plates 28a and 28b and the supports 29a and 29b of the present invention are removed from the wall surface of the vacuum chamber 11 and the electrode plates 18a and 18b are provided on the anode electrodes 17 by the supports 39a and 39b. Device 132.

The temperature of the sputtering apparatus 2 of the present invention and the sputtering apparatus 132 of FIG. 8 was measured at a plurality of the same locations on the substrate surface. The measurement results are shown in the graph of FIG. It can be said that the temperature distribution is almost the same.

Further, the sheet resistance value Rs when the molybdenum thin film was formed by the sputtering apparatus 2 of the present invention was 0.0760Ω / □ ± 18.7%, and the film thickness distribution was 3915 angstrom ± 14.6%.

In the sputtering apparatus 132 of FIG. 8, it is about the same as 0.0804Ω / □ ± 18.2%, and the film thickness distribution is 3805 angstrom ± 14.1%, which are the same characteristics.
The film thickness distribution is shown in the table below.

However, in the case of the sputtering apparatus 132 of FIG. 8, since the electrode plates 18a and 18b and the supports 39a and 39b are supported by the substrate side vacuum chamber via the anode electrode 17, the target side vacuum chamber is used. The weight inside the separated substrate-side vacuum chamber becomes large, which makes it difficult to separate the target-side vacuum chamber and the substrate-side vacuum chamber.

The two supports 29a and 29b were each one plate, but as in the sputtering apparatus 3 shown in FIG. 5, one electrode plate 28a and 28b were each formed into three supports 29c and 29b. It may be supported by 29d.

Further, the plasma region 10 may have an endless shape or a ring shape, and the case where both ends of the outer peripheral magnet 25 are square or elliptical is also included in the present invention.

Further, and if not disposed ends of each magnet device 15 ₁ to 15 ₄ on the same straight line, the The present invention is also not the distance between the end portion and the cathode electrode 12 of each magnet device 15 ₁ to 15 ₄ constant included.

The electrode plates 28a and 28b are located on the sides of the anode electrode 17, one of the two parallel sides is outside the side of the substrate 16, and the other side is more than the side of the target 13. It is located inside.

The two electrode plates 28a and 28b each have a shape having two parallel sides, and the electrode plates 28a and 28b have a rectangular shape, for example.

Of both ends of the plasma region 10, one electrode plate 28a is arranged between a curved portion arranged in a row at one end of the plasma region 10 and a plane on which the surface of the substrate 16 is located, and the plasma region 10 is arranged. Another electrode plate 28b is arranged between the curved portions arranged in a row at the opposite end of the substrate 16 and the plane on which the surface of the substrate 16 is located.

Further, of the two sides of the electrode plates 28a and 28b, the side far from the center of the target 13 protrudes to the outside of the curved portion of the plasma region 10, and the side closer to the center of the target 13 is the plasma region 10. It may protrude inside the curved portion of the plasma. Furthermore, it may protrude from both.

Although the target 13 is metallic molybdenum, the present invention is not limited to metallic molybdenum, and the sputtering apparatus 2 of the present invention includes metallic titanium, molybdenum alloy, aluminum, aluminum alloy, metallic tungsten, pure copper, and the like. The effect of the present invention can be exerted on the target 13 made of a metal such as a copper alloy or tantalum.

2 …… Sputtering device 10 …… Plasma region 11 …… Vacuum tank 11a …… Target side vacuum tub 11b …… Substrate side vacuum tub 13 …… Target 14 …… Board arrangement part 15 ₁ to 15 ₄ …… Magnet device 16 …… ... Substrate 17 ... Anode electrodes 28a, 28b ... Electrode plate 22 ... Spatter power supply

Claims (3)

With a vacuum tank,
With the target placed inside the vacuum chamber,
A cathode electrode arranged on the back surface side of the target and connected to a sputtering power supply,
A plurality of magnet devices arranged on the back surface side of the cathode electrode, and
The board placement part where the board is placed and
A ring-shaped anode electrode connected to the ground potential and covering the outer periphery of the substrate, and
Have,
Each of the magnet devices is provided with an elongated ring-shaped outer peripheral magnet and an inner magnet arranged inside the outer peripheral magnet.
A sputtering device in which a magnetic flux formed between the outer peripheral magnet and the inner magnet inside the target is leaked to the surface of the target, and the target is sputtered to form a thin film on the surface of the substrate.
The outer peripheral magnet and the inner magnet inside the outer magnet are separated from each other, and the plasma region, which is a region between the outer peripheral magnet and the inner magnet inside the outer peripheral magnet, is formed into an elongated ring shape.
Wherein between the short side ends a plane surface is positioned in the substrate of-ring shape of the elongate plasma region, it is arranged connected to the electrode plate to a ground potential,
The TB distance between the surface of the electrode plate and the surface of the target is shorter than the TA distance between the surface of the anode electrode and the surface of the target.
The electrode plate is arranged only on two sides of the target located along both ends of the short side of the plasma region.
The vacuum chamber is configured to be separable into a target-side vacuum chamber in which the target is arranged and a substrate-side vacuum chamber in which the anode electrode is arranged inside.
In a state where the target-side vacuum chamber and the substrate-side vacuum chamber are in close contact with each other, the target and the anode electrode are arranged vertically, and the weight of the electrode plate is supported by the target-side vacuum chamber. And
A sputtering apparatus in which the substrate-side vacuum chamber moves while the target-side vacuum chamber is stationary when the target-side vacuum chamber and the substrate-side vacuum chamber are separated. The sputtering apparatus according to claim 1, wherein the TB distance is larger than 10% and smaller than 90% of the TS distance between the surface of the target and the surface of the substrate arranged on the substrate arrangement portion. The sputtering apparatus according to any one of claims 1 to 2, wherein the target is a flat metal molybdenum plate, and the thin film is a metal molybdenum thin film.

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