JP6960390B2 - 給電構造及びプラズマ処理装置 - Google Patents

給電構造及びプラズマ処理装置 Download PDF

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Publication number
JP6960390B2
JP6960390B2 JP2018234681A JP2018234681A JP6960390B2 JP 6960390 B2 JP6960390 B2 JP 6960390B2 JP 2018234681 A JP2018234681 A JP 2018234681A JP 2018234681 A JP2018234681 A JP 2018234681A JP 6960390 B2 JP6960390 B2 JP 6960390B2
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Prior art keywords
connecting member
ring
region
terminal region
focus ring
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JP2018234681A
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Japanese (ja)
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JP2020096136A (ja
JP2020096136A5 (enExample
Inventor
康晴 佐々木
陽平 内田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018234681A priority Critical patent/JP6960390B2/ja
Priority to TW108144418A priority patent/TWI840462B/zh
Priority to CN201911273973.1A priority patent/CN111326397B/zh
Priority to KR1020190165199A priority patent/KR102786117B1/ko
Priority to US16/713,972 priority patent/US10886108B2/en
Publication of JP2020096136A publication Critical patent/JP2020096136A/ja
Publication of JP2020096136A5 publication Critical patent/JP2020096136A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018234681A 2018-12-14 2018-12-14 給電構造及びプラズマ処理装置 Active JP6960390B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018234681A JP6960390B2 (ja) 2018-12-14 2018-12-14 給電構造及びプラズマ処理装置
TW108144418A TWI840462B (zh) 2018-12-14 2019-12-05 供電構造及電漿處理裝置
CN201911273973.1A CN111326397B (zh) 2018-12-14 2019-12-12 供电构造和等离子体处理装置
KR1020190165199A KR102786117B1 (ko) 2018-12-14 2019-12-12 급전 구조 및 플라즈마 처리 장치
US16/713,972 US10886108B2 (en) 2018-12-14 2019-12-13 Power feed structure and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018234681A JP6960390B2 (ja) 2018-12-14 2018-12-14 給電構造及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2020096136A JP2020096136A (ja) 2020-06-18
JP2020096136A5 JP2020096136A5 (enExample) 2021-10-14
JP6960390B2 true JP6960390B2 (ja) 2021-11-05

Family

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Family Applications (1)

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JP2018234681A Active JP6960390B2 (ja) 2018-12-14 2018-12-14 給電構造及びプラズマ処理装置

Country Status (5)

Country Link
US (1) US10886108B2 (enExample)
JP (1) JP6960390B2 (enExample)
KR (1) KR102786117B1 (enExample)
CN (1) CN111326397B (enExample)
TW (1) TWI840462B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11848177B2 (en) * 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
KR20210117338A (ko) 2019-02-12 2021-09-28 램 리써치 코포레이션 세라믹 모놀리식 바디를 갖는 정전 척
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
TW202325102A (zh) * 2021-08-17 2023-06-16 日商東京威力科創股份有限公司 電漿處理裝置及蝕刻方法
JP7737843B2 (ja) * 2021-08-25 2025-09-11 東京エレクトロン株式会社 プラズマ処理装置
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法
CN119673741B (zh) * 2025-02-14 2025-05-30 中微半导体设备(上海)股份有限公司 一种边缘环组件、下电极组件、等离子体处理装置和制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
TW557532B (en) * 2000-07-25 2003-10-11 Applied Materials Inc Heated substrate support assembly and method
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
KR100698614B1 (ko) * 2005-07-29 2007-03-22 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템
JP4884047B2 (ja) 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
KR101174816B1 (ko) * 2009-12-30 2012-08-17 주식회사 탑 엔지니어링 플라즈마 처리 장치의 포커스 링 및 이를 구비한 플라즈마 처리 장치
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP6114698B2 (ja) * 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
JP5602282B2 (ja) * 2013-06-06 2014-10-08 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP6284786B2 (ja) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
US10903055B2 (en) * 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
KR101842124B1 (ko) * 2016-05-27 2018-03-27 세메스 주식회사 지지 유닛, 기판 처리 장치 및 기판 처리 방법
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
KR20180033995A (ko) * 2016-09-27 2018-04-04 삼성전자주식회사 모니터링 유닛, 이를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 칩의 제조 방법
JP6986937B2 (ja) * 2017-01-05 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置
KR102582566B1 (ko) * 2017-03-30 2023-09-26 스미토모 오사카 세멘토 가부시키가이샤 복합 소결체, 정전 척 부재, 정전 척 장치 및 복합 소결체의 제조 방법
US20180323042A1 (en) * 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber
JP7145042B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング

Also Published As

Publication number Publication date
US10886108B2 (en) 2021-01-05
CN111326397A (zh) 2020-06-23
TW202030758A (zh) 2020-08-16
KR102786117B1 (ko) 2025-03-24
TWI840462B (zh) 2024-05-01
JP2020096136A (ja) 2020-06-18
US20200194240A1 (en) 2020-06-18
KR20200074027A (ko) 2020-06-24
CN111326397B (zh) 2024-05-10

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