KR102786117B1 - 급전 구조 및 플라즈마 처리 장치 - Google Patents

급전 구조 및 플라즈마 처리 장치 Download PDF

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KR102786117B1
KR102786117B1 KR1020190165199A KR20190165199A KR102786117B1 KR 102786117 B1 KR102786117 B1 KR 102786117B1 KR 1020190165199 A KR1020190165199 A KR 1020190165199A KR 20190165199 A KR20190165199 A KR 20190165199A KR 102786117 B1 KR102786117 B1 KR 102786117B1
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South Korea
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connecting member
terminal region
region
focus ring
electrode
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Korean (ko)
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KR20200074027A (ko
Inventor
야스하루 사사키
요헤이 우치다
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020190165199A 2018-12-14 2019-12-12 급전 구조 및 플라즈마 처리 장치 Active KR102786117B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-234681 2018-12-14
JP2018234681A JP6960390B2 (ja) 2018-12-14 2018-12-14 給電構造及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20200074027A KR20200074027A (ko) 2020-06-24
KR102786117B1 true KR102786117B1 (ko) 2025-03-24

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Country Status (5)

Country Link
US (1) US10886108B2 (enExample)
JP (1) JP6960390B2 (enExample)
KR (1) KR102786117B1 (enExample)
CN (1) CN111326397B (enExample)
TW (1) TWI840462B (enExample)

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US11848177B2 (en) * 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
KR20210117338A (ko) 2019-02-12 2021-09-28 램 리써치 코포레이션 세라믹 모놀리식 바디를 갖는 정전 척
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
TW202325102A (zh) * 2021-08-17 2023-06-16 日商東京威力科創股份有限公司 電漿處理裝置及蝕刻方法
JP7737843B2 (ja) * 2021-08-25 2025-09-11 東京エレクトロン株式会社 プラズマ処理装置
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法
CN119673741B (zh) * 2025-02-14 2025-05-30 中微半导体设备(上海)股份有限公司 一种边缘环组件、下电极组件、等离子体处理装置和制备方法

Citations (3)

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US20170345625A1 (en) 2016-05-27 2017-11-30 Semes Co., Ltd. Support unit, apparatus and method for treating a substrate
US20180090303A1 (en) 2016-09-27 2018-03-29 Samsung Electronics Co., Ltd. Monitoring Units, Plasma Treatment Devices Including the Same, and Methods of Fabricating Semiconductor Devices Using the Same
US20180323042A1 (en) * 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber

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US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
TW557532B (en) * 2000-07-25 2003-10-11 Applied Materials Inc Heated substrate support assembly and method
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
KR100698614B1 (ko) * 2005-07-29 2007-03-22 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템
JP4884047B2 (ja) 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
KR101174816B1 (ko) * 2009-12-30 2012-08-17 주식회사 탑 엔지니어링 플라즈마 처리 장치의 포커스 링 및 이를 구비한 플라즈마 처리 장치
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP6114698B2 (ja) * 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
JP5602282B2 (ja) * 2013-06-06 2014-10-08 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP6284786B2 (ja) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
US10903055B2 (en) * 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
JP6986937B2 (ja) * 2017-01-05 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置
KR102582566B1 (ko) * 2017-03-30 2023-09-26 스미토모 오사카 세멘토 가부시키가이샤 복합 소결체, 정전 척 부재, 정전 척 장치 및 복합 소결체의 제조 방법
JP7145042B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170345625A1 (en) 2016-05-27 2017-11-30 Semes Co., Ltd. Support unit, apparatus and method for treating a substrate
US20180090303A1 (en) 2016-09-27 2018-03-29 Samsung Electronics Co., Ltd. Monitoring Units, Plasma Treatment Devices Including the Same, and Methods of Fabricating Semiconductor Devices Using the Same
US20180323042A1 (en) * 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber

Also Published As

Publication number Publication date
US10886108B2 (en) 2021-01-05
CN111326397A (zh) 2020-06-23
TW202030758A (zh) 2020-08-16
TWI840462B (zh) 2024-05-01
JP2020096136A (ja) 2020-06-18
JP6960390B2 (ja) 2021-11-05
US20200194240A1 (en) 2020-06-18
KR20200074027A (ko) 2020-06-24
CN111326397B (zh) 2024-05-10

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