TWI840462B - 供電構造及電漿處理裝置 - Google Patents

供電構造及電漿處理裝置 Download PDF

Info

Publication number
TWI840462B
TWI840462B TW108144418A TW108144418A TWI840462B TW I840462 B TWI840462 B TW I840462B TW 108144418 A TW108144418 A TW 108144418A TW 108144418 A TW108144418 A TW 108144418A TW I840462 B TWI840462 B TW I840462B
Authority
TW
Taiwan
Prior art keywords
electrode
region
focusing ring
ring
connecting member
Prior art date
Application number
TW108144418A
Other languages
English (en)
Chinese (zh)
Other versions
TW202030758A (zh
Inventor
佐佐木康晴
內田陽平
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202030758A publication Critical patent/TW202030758A/zh
Application granted granted Critical
Publication of TWI840462B publication Critical patent/TWI840462B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW108144418A 2018-12-14 2019-12-05 供電構造及電漿處理裝置 TWI840462B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-234681 2018-12-14
JP2018234681A JP6960390B2 (ja) 2018-12-14 2018-12-14 給電構造及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW202030758A TW202030758A (zh) 2020-08-16
TWI840462B true TWI840462B (zh) 2024-05-01

Family

ID=71072817

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108144418A TWI840462B (zh) 2018-12-14 2019-12-05 供電構造及電漿處理裝置

Country Status (5)

Country Link
US (1) US10886108B2 (enExample)
JP (1) JP6960390B2 (enExample)
KR (1) KR102786117B1 (enExample)
CN (1) CN111326397B (enExample)
TW (1) TWI840462B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11848177B2 (en) * 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
KR20210117338A (ko) 2019-02-12 2021-09-28 램 리써치 코포레이션 세라믹 모놀리식 바디를 갖는 정전 척
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
TW202325102A (zh) * 2021-08-17 2023-06-16 日商東京威力科創股份有限公司 電漿處理裝置及蝕刻方法
JP7737843B2 (ja) * 2021-08-25 2025-09-11 東京エレクトロン株式会社 プラズマ処理装置
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法
CN119673741B (zh) * 2025-02-14 2025-05-30 中微半导体设备(上海)股份有限公司 一种边缘环组件、下电极组件、等离子体处理装置和制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130337655A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
TW201546899A (zh) * 2014-02-27 2015-12-16 Tokyo Electron Ltd 電漿處理裝置之清潔方法
US20180323042A1 (en) * 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
TW557532B (en) * 2000-07-25 2003-10-11 Applied Materials Inc Heated substrate support assembly and method
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
KR100698614B1 (ko) * 2005-07-29 2007-03-22 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템
JP4884047B2 (ja) 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
KR101174816B1 (ko) * 2009-12-30 2012-08-17 주식회사 탑 엔지니어링 플라즈마 처리 장치의 포커스 링 및 이를 구비한 플라즈마 처리 장치
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP5602282B2 (ja) * 2013-06-06 2014-10-08 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
US10903055B2 (en) * 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
KR101842124B1 (ko) * 2016-05-27 2018-03-27 세메스 주식회사 지지 유닛, 기판 처리 장치 및 기판 처리 방법
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
KR20180033995A (ko) * 2016-09-27 2018-04-04 삼성전자주식회사 모니터링 유닛, 이를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 칩의 제조 방법
JP6986937B2 (ja) * 2017-01-05 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置
KR102582566B1 (ko) * 2017-03-30 2023-09-26 스미토모 오사카 세멘토 가부시키가이샤 복합 소결체, 정전 척 부재, 정전 척 장치 및 복합 소결체의 제조 방법
JP7145042B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130337655A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
TW201546899A (zh) * 2014-02-27 2015-12-16 Tokyo Electron Ltd 電漿處理裝置之清潔方法
US20180323042A1 (en) * 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber

Also Published As

Publication number Publication date
US10886108B2 (en) 2021-01-05
CN111326397A (zh) 2020-06-23
TW202030758A (zh) 2020-08-16
KR102786117B1 (ko) 2025-03-24
JP2020096136A (ja) 2020-06-18
JP6960390B2 (ja) 2021-11-05
US20200194240A1 (en) 2020-06-18
KR20200074027A (ko) 2020-06-24
CN111326397B (zh) 2024-05-10

Similar Documents

Publication Publication Date Title
TWI840462B (zh) 供電構造及電漿處理裝置
KR102603893B1 (ko) 플라즈마 처리 장치
US12293903B2 (en) Substrate support and plasma processing apparatus
JP7145041B2 (ja) 基板支持器、プラズマ処理装置、及びフォーカスリング
JP7145042B2 (ja) 基板支持器及びプラズマ処理装置
US20180309423A1 (en) Filter device and plasma processing apparatus
KR20200140198A (ko) 정전 척, 지지대 및 플라즈마 처리 장치
TW202306440A (zh) 電漿處理裝置
KR102876338B1 (ko) 플라스마 처리 장치 및 플라스마 처리 방법
US11676799B2 (en) Plasma processing apparatus
JP2023002987A (ja) 基板支持器、プラズマ処理装置、及びエッジリング
KR102878028B1 (ko) 적재대 및 플라스마 처리 장치
JP2023039435A (ja) プラズマ処理装置のフォーカスリングをクリーニングするための導電性部材