JP6959458B2 - 薄膜蒸着用の前駆体溶液及びこれを用いた薄膜形成方法。 - Google Patents
薄膜蒸着用の前駆体溶液及びこれを用いた薄膜形成方法。 Download PDFInfo
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- JP6959458B2 JP6959458B2 JP2020545031A JP2020545031A JP6959458B2 JP 6959458 B2 JP6959458 B2 JP 6959458B2 JP 2020545031 A JP2020545031 A JP 2020545031A JP 2020545031 A JP2020545031 A JP 2020545031A JP 6959458 B2 JP6959458 B2 JP 6959458B2
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- thin film
- precursor solution
- functional solvent
- metal halide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
室温(room temperature)で金属ハロゲン化物を溶解することができる、液状アルケン(alkene)又は液状アルキン(alkyne)から選択される機能性溶媒と、
前記機能性溶媒に溶解されて、室温で液状にて存在する金属ハロゲン化物と
からなることを特徴とする。
前記金属ハロゲン化物と前記機能性溶媒とを混合してチャンバ内に供給する、薄膜蒸着用の前駆体溶液の供給段階
を含むことができる。
を含むことができる。
を含むことができる。
前記パージされたチャンバ内に、さらに機能性溶媒を供給する段階と
を含むこともできる。
Claims (6)
- 室温(room temperature)で金属ハロゲン化物を溶解することができる、液状アルケン(alkene)又は液状アルキン(alkyne)から選択される機能性溶媒と、
前記機能性溶媒に溶解されて、室温で液状にて存在する金属ハロゲン化物と
からなることを特徴とする、薄膜蒸着用の前駆体溶液。 - 前記金属ハロゲン化物は、金属フッ化物又は金属塩化物であることを特徴とする、請求項1に記載の薄膜蒸着用の前駆体溶液。
- 前記アルケンは、直鎖状アルケン、環状アルケン、及び分枝状アルケンのいずれか1つ又はそれ以上であり、
前記アルキンは、直鎖状アルキン及び分枝状アルキンのいずれか1つ又はそれ以上であることを特徴とする、請求項1に記載の薄膜蒸着用の前駆体溶液。 - 前記金属ハロゲン化物と前記機能性溶媒とは、1:0.01〜1:20のモル比で混合されていることを特徴とする、請求項1に記載の薄膜蒸着用の前駆体溶液。
- 請求項1に記載の薄膜蒸着用の前駆体溶液を用いた薄膜形成方法であって、
前記金属ハロゲン化物と前記機能性溶媒とを混合してチャンバ内に供給する、薄膜蒸着用の前駆体溶液の供給段階
を含むことを特徴とする、薄膜形成方法。 - 前記薄膜蒸着用の前駆体溶液の供給段階の後に、前記チャンバをパージするパージ段階と、
前記パージされたチャンバ内に、さらに前記機能性溶媒を供給する段階と
を含むことを特徴とする、請求項5に記載の薄膜形成方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0152358 | 2017-11-15 | ||
KR1020170152358A KR102103346B1 (ko) | 2017-11-15 | 2017-11-15 | 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법. |
PCT/KR2018/013785 WO2019098639A1 (ko) | 2017-11-15 | 2018-11-13 | 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법. |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021502494A JP2021502494A (ja) | 2021-01-28 |
JP6959458B2 true JP6959458B2 (ja) | 2021-11-02 |
Family
ID=66539716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2020545031A Active JP6959458B2 (ja) | 2017-11-15 | 2018-11-13 | 薄膜蒸着用の前駆体溶液及びこれを用いた薄膜形成方法。 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20200270750A1 (ja) |
JP (1) | JP6959458B2 (ja) |
KR (1) | KR102103346B1 (ja) |
CN (1) | CN111527237A (ja) |
SG (1) | SG11202004319UA (ja) |
WO (1) | WO2019098639A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102486128B1 (ko) | 2020-12-30 | 2023-01-06 | 에스케이트리켐 주식회사 | 유기금속 할로겐화물을 함유하는 금속막 형성용 전구체, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자. |
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US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
JP4048742B2 (ja) * | 2001-07-26 | 2008-02-20 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の製造方法 |
JP2003064475A (ja) * | 2001-08-27 | 2003-03-05 | Asahi Denka Kogyo Kk | 化学気相成長用原料及びこれを用いた薄膜の製造方法 |
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KR20200072407A (ko) * | 2018-12-12 | 2020-06-22 | 에스케이트리켐 주식회사 | 금속막 형성용 전구체 조성물, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자. |
-
2017
- 2017-11-15 KR KR1020170152358A patent/KR102103346B1/ko active IP Right Grant
-
2018
- 2018-11-13 WO PCT/KR2018/013785 patent/WO2019098639A1/ko active Application Filing
- 2018-11-13 CN CN201880074115.1A patent/CN111527237A/zh active Pending
- 2018-11-13 SG SG11202004319UA patent/SG11202004319UA/en unknown
- 2018-11-13 JP JP2020545031A patent/JP6959458B2/ja active Active
- 2018-11-13 US US16/762,726 patent/US20200270750A1/en not_active Abandoned
-
2021
- 2021-05-25 US US17/330,047 patent/US20210301401A1/en active Pending
Also Published As
Publication number | Publication date |
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SG11202004319UA (en) | 2020-06-29 |
JP2021502494A (ja) | 2021-01-28 |
KR102103346B1 (ko) | 2020-04-22 |
KR20190055531A (ko) | 2019-05-23 |
US20210301401A1 (en) | 2021-09-30 |
WO2019098639A1 (ko) | 2019-05-23 |
US20200270750A1 (en) | 2020-08-27 |
CN111527237A (zh) | 2020-08-11 |
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