SG11202004319UA - Precursor solution for thin film deposition and thin film forming method using same - Google Patents

Precursor solution for thin film deposition and thin film forming method using same

Info

Publication number
SG11202004319UA
SG11202004319UA SG11202004319UA SG11202004319UA SG11202004319UA SG 11202004319U A SG11202004319U A SG 11202004319UA SG 11202004319U A SG11202004319U A SG 11202004319UA SG 11202004319U A SG11202004319U A SG 11202004319UA SG 11202004319U A SG11202004319U A SG 11202004319UA
Authority
SG
Singapore
Prior art keywords
thin film
same
forming method
precursor solution
film forming
Prior art date
Application number
SG11202004319UA
Inventor
Yong Joo Park
Han Sol Oh
In Chun Hwang
Sang Ho Kim
Chang Sung Hong
Sang Kyung Lee
Original Assignee
Sk Trichem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Trichem filed Critical Sk Trichem
Publication of SG11202004319UA publication Critical patent/SG11202004319UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202004319UA 2017-11-15 2018-11-13 Precursor solution for thin film deposition and thin film forming method using same SG11202004319UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170152358A KR102103346B1 (en) 2017-11-15 2017-11-15 Precursor Solution for Vapor Deposition and Fabrication Method of Thin Film Using the Same
PCT/KR2018/013785 WO2019098639A1 (en) 2017-11-15 2018-11-13 Precursor solution for thin film deposition and thin film forming method using same

Publications (1)

Publication Number Publication Date
SG11202004319UA true SG11202004319UA (en) 2020-06-29

Family

ID=66539716

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202004319UA SG11202004319UA (en) 2017-11-15 2018-11-13 Precursor solution for thin film deposition and thin film forming method using same

Country Status (6)

Country Link
US (2) US20200270750A1 (en)
JP (1) JP6959458B2 (en)
KR (1) KR102103346B1 (en)
CN (1) CN111527237A (en)
SG (1) SG11202004319UA (en)
WO (1) WO2019098639A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102486128B1 (en) 2020-12-30 2023-01-06 에스케이트리켐 주식회사 Precursor comprising organometal halide, deposition method of film and semiconductor device of the same

Family Cites Families (26)

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US5946594A (en) * 1996-01-02 1999-08-31 Micron Technology, Inc. Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
JP3169934B2 (en) * 1999-03-16 2001-05-28 株式会社トリケミカル研究所 Conductive Ta-based film forming material, conductive Ta-based film forming method, wiring film forming method, and ULSI
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
JP4048742B2 (en) * 2001-07-26 2008-02-20 日亜化学工業株式会社 Method for producing gallium nitride compound semiconductor
JP2003064475A (en) * 2001-08-27 2003-03-05 Asahi Denka Kogyo Kk Raw material of chemical vapor deposition and method for manufacturing thin film using the same
US7253122B2 (en) * 2002-08-28 2007-08-07 Micron Technology, Inc. Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
KR100587686B1 (en) 2004-07-15 2006-06-08 삼성전자주식회사 Method for forming TiN and method for manufacturing capacitor used the same
KR100714269B1 (en) 2004-10-14 2007-05-02 삼성전자주식회사 Method for forming metal layer used the manufacturing semiconductor device
US7514119B2 (en) * 2005-04-29 2009-04-07 Linde, Inc. Method and apparatus for using solution based precursors for atomic layer deposition
US20120295038A1 (en) * 2005-04-29 2012-11-22 Ce Ma Method and apparatus for using solution based precursors for atomic layer deposition
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
JP4975414B2 (en) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Method for film deposition by CVD or ALD
KR101364293B1 (en) * 2006-09-30 2014-02-18 삼성전자주식회사 Composition for Dielectric Thin Film, Metal Oxide Dielectric Thin Film Using the Same and Preparation Method Thereof
CN101495672B (en) * 2006-11-02 2011-12-07 高级技术材料公司 Antimony and germanium complexes useful for CVD/ALD of metal thin films
US7892964B2 (en) * 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
US8993072B2 (en) * 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
AT13091U1 (en) 2012-02-27 2013-06-15 Ceratizit Austria Gmbh Method for producing a hard material layer on a substrate, hard material layer and cutting tool
US8894870B2 (en) * 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
KR102247687B1 (en) 2014-02-07 2021-05-04 비질리오 프란델리 Support Device and Closure assembly of a Lid of a Cooking Recipient
KR101936162B1 (en) * 2014-06-13 2019-01-08 주식회사 유피케미칼 Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition
US9624577B2 (en) * 2014-07-22 2017-04-18 Applied Materials, Inc. Deposition of metal doped amorphous carbon film
KR101665378B1 (en) * 2014-10-02 2016-10-24 연세대학교 산학협력단 Solution-phase process of preparing single-layer transition metal chalogenides
KR101787204B1 (en) * 2015-11-23 2017-10-18 주식회사 한솔케미칼 Organic metal precursor compound for atomic layer deposition and ald deposition using the same
KR102627456B1 (en) * 2015-12-21 2024-01-19 삼성전자주식회사 Tantalum compound and methods of forming thin film and integrated circuit device
KR20200072407A (en) * 2018-12-12 2020-06-22 에스케이트리켐 주식회사 Precursor composition for film deposition, deposition method of film and semiconductor device of the same

Also Published As

Publication number Publication date
WO2019098639A1 (en) 2019-05-23
JP6959458B2 (en) 2021-11-02
US20200270750A1 (en) 2020-08-27
KR102103346B1 (en) 2020-04-22
KR20190055531A (en) 2019-05-23
JP2021502494A (en) 2021-01-28
US20210301401A1 (en) 2021-09-30
CN111527237A (en) 2020-08-11

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