JP6957998B2 - マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム調整方法 - Google Patents

マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム調整方法 Download PDF

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Publication number
JP6957998B2
JP6957998B2 JP2017112753A JP2017112753A JP6957998B2 JP 6957998 B2 JP6957998 B2 JP 6957998B2 JP 2017112753 A JP2017112753 A JP 2017112753A JP 2017112753 A JP2017112753 A JP 2017112753A JP 6957998 B2 JP6957998 B2 JP 6957998B2
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Japan
Prior art keywords
aperture
objective lens
charged particle
stopping
particle beam
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JP2017112753A
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English (en)
Japanese (ja)
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JP2018207014A (ja
JP2018207014A5 (enExample
Inventor
森田　博文
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2017112753A priority Critical patent/JP6957998B2/ja
Priority to TW107117146A priority patent/TWI684831B/zh
Priority to KR1020180059599A priority patent/KR102153655B1/ko
Priority to US15/992,451 priority patent/US20180358203A1/en
Publication of JP2018207014A publication Critical patent/JP2018207014A/ja
Publication of JP2018207014A5 publication Critical patent/JP2018207014A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0432—High speed and short duration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1502—Mechanical adjustments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
JP2017112753A 2017-06-07 2017-06-07 マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム調整方法 Active JP6957998B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017112753A JP6957998B2 (ja) 2017-06-07 2017-06-07 マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム調整方法
TW107117146A TWI684831B (zh) 2017-06-07 2018-05-21 多帶電粒子束描繪裝置及多帶電粒子束調整方法
KR1020180059599A KR102153655B1 (ko) 2017-06-07 2018-05-25 멀티 하전 입자빔 묘화 장치 및 멀티 하전 입자빔 조정 방법
US15/992,451 US20180358203A1 (en) 2017-06-07 2018-05-30 Multi charged particle beam writing apparatus and multi charged particle beam adjusting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017112753A JP6957998B2 (ja) 2017-06-07 2017-06-07 マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム調整方法

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JP2018207014A JP2018207014A (ja) 2018-12-27
JP2018207014A5 JP2018207014A5 (enExample) 2020-06-18
JP6957998B2 true JP6957998B2 (ja) 2021-11-02

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JP2017112753A Active JP6957998B2 (ja) 2017-06-07 2017-06-07 マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム調整方法

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US (1) US20180358203A1 (enExample)
JP (1) JP6957998B2 (enExample)
KR (1) KR102153655B1 (enExample)
TW (1) TWI684831B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023176194A (ja) * 2022-05-31 2023-12-13 株式会社日立ハイテク 荷電粒子ビーム装置、荷電粒子ビームシステム、調整方法
JP7619466B2 (ja) * 2023-01-16 2025-01-22 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP7480918B1 (ja) * 2023-01-16 2024-05-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456210A (ja) * 1990-06-26 1992-02-24 Mitsubishi Electric Corp 電子ビーム露光装置
JP3400608B2 (ja) * 1995-06-01 2003-04-28 株式会社日立製作所 走査電子顕微鏡
DE10211977A1 (de) * 2002-03-18 2003-10-02 Leo Elektronenmikroskopie Gmbh Rasterelektronenmikroskop
JP3803105B2 (ja) * 2004-09-07 2006-08-02 株式会社日立ハイテクノロジーズ 電子ビーム応用装置
JP2006120331A (ja) * 2004-10-19 2006-05-11 Jeol Ltd 集束イオンビーム装置および収差補正集束イオンビーム装置
DE102004052994C5 (de) * 2004-11-03 2010-08-26 Vistec Electron Beam Gmbh Multistrahlmodulator für einen Partikelstrahl und Verwendung des Multistrahlmodulators zur maskenlosen Substratsstrukturierung
EP1760762B1 (en) * 2005-09-06 2012-02-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for selecting an emission area of an emission pattern
JP4789260B2 (ja) * 2006-08-23 2011-10-12 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及びアパーチャの軸調整方法
JP4994151B2 (ja) * 2007-08-14 2012-08-08 日本電子株式会社 荷電粒子線装置
JP2009200565A (ja) * 2008-02-19 2009-09-03 Murata Mach Ltd デジタル複合機
JP5537050B2 (ja) * 2008-04-11 2014-07-02 株式会社日立ハイテクノロジーズ 集束イオンビーム装置
DE102008062450B4 (de) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern
JP5403739B2 (ja) * 2009-05-18 2014-01-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US8546767B2 (en) * 2010-02-22 2013-10-01 Ims Nanofabrication Ag Pattern definition device with multiple multibeam array
JP5315302B2 (ja) * 2010-07-27 2013-10-16 株式会社日立ハイテクノロジーズ 走査透過電子顕微鏡及びその軸調整方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP5977550B2 (ja) * 2012-03-22 2016-08-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP6057700B2 (ja) * 2012-12-26 2017-01-11 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP6293435B2 (ja) * 2013-08-08 2018-03-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6353229B2 (ja) * 2014-01-22 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6320186B2 (ja) * 2014-06-16 2018-05-09 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置

Also Published As

Publication number Publication date
US20180358203A1 (en) 2018-12-13
JP2018207014A (ja) 2018-12-27
TW201903535A (zh) 2019-01-16
KR102153655B1 (ko) 2020-09-08
TWI684831B (zh) 2020-02-11
KR20180133792A (ko) 2018-12-17

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