JP6957134B2 - 酸化物半導体の評価方法 - Google Patents
酸化物半導体の評価方法 Download PDFInfo
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- JP6957134B2 JP6957134B2 JP2016143073A JP2016143073A JP6957134B2 JP 6957134 B2 JP6957134 B2 JP 6957134B2 JP 2016143073 A JP2016143073 A JP 2016143073A JP 2016143073 A JP2016143073 A JP 2016143073A JP 6957134 B2 JP6957134 B2 JP 6957134B2
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| JP2016143073A JP6957134B2 (ja) | 2016-07-21 | 2016-07-21 | 酸化物半導体の評価方法 |
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| JP2016143073A JP6957134B2 (ja) | 2016-07-21 | 2016-07-21 | 酸化物半導体の評価方法 |
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| Publication Number | Publication Date |
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| JP2018014408A JP2018014408A (ja) | 2018-01-25 |
| JP2018014408A5 JP2018014408A5 (enExample) | 2019-08-22 |
| JP6957134B2 true JP6957134B2 (ja) | 2021-11-02 |
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| JP2016143073A Active JP6957134B2 (ja) | 2016-07-21 | 2016-07-21 | 酸化物半導体の評価方法 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI844077B (zh) * | 2021-12-29 | 2024-06-01 | 大陸商西安奕斯偉材料科技股份有限公司 | 藉助少數載子壽命表徵矽片捕獲金屬雜質效率的裝置和方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6922826B2 (ja) * | 2018-04-25 | 2021-08-18 | 信越半導体株式会社 | シリコン単結晶基板の選別方法 |
| US11929426B2 (en) | 2018-09-05 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| CN117313625B (zh) * | 2023-11-29 | 2024-02-09 | 北京智芯微电子科技有限公司 | Mos器件寿命预测方法、装置和电子设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580828A (en) * | 1992-12-16 | 1996-12-03 | Semiconductor Physics Laboratory Rt | Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material |
| JP5814558B2 (ja) * | 2010-06-30 | 2015-11-17 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法 |
| JP6152348B2 (ja) * | 2013-01-11 | 2017-06-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法 |
| JP5798669B2 (ja) * | 2013-12-03 | 2015-10-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価装置 |
| WO2015198604A1 (ja) * | 2014-06-26 | 2015-12-30 | 株式会社Joled | 薄膜トランジスタ及び有機el表示装置 |
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- 2016-07-21 JP JP2016143073A patent/JP6957134B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI844077B (zh) * | 2021-12-29 | 2024-06-01 | 大陸商西安奕斯偉材料科技股份有限公司 | 藉助少數載子壽命表徵矽片捕獲金屬雜質效率的裝置和方法 |
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| JP2018014408A (ja) | 2018-01-25 |
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