JP6957134B2 - 酸化物半導体の評価方法 - Google Patents

酸化物半導体の評価方法 Download PDF

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JP6957134B2
JP6957134B2 JP2016143073A JP2016143073A JP6957134B2 JP 6957134 B2 JP6957134 B2 JP 6957134B2 JP 2016143073 A JP2016143073 A JP 2016143073A JP 2016143073 A JP2016143073 A JP 2016143073A JP 6957134 B2 JP6957134 B2 JP 6957134B2
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insulator
oxide semiconductor
transistor
conductor
oxide
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JP2018014408A (ja
JP2018014408A5 (enExample
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直樹 奥野
将志 津吹
一條 充弘
俊弥 遠藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thin Film Transistor (AREA)
JP2016143073A 2016-07-21 2016-07-21 酸化物半導体の評価方法 Active JP6957134B2 (ja)

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JP2018014408A5 JP2018014408A5 (enExample) 2019-08-22
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI844077B (zh) * 2021-12-29 2024-06-01 大陸商西安奕斯偉材料科技股份有限公司 藉助少數載子壽命表徵矽片捕獲金屬雜質效率的裝置和方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6922826B2 (ja) * 2018-04-25 2021-08-18 信越半導体株式会社 シリコン単結晶基板の選別方法
US11929426B2 (en) 2018-09-05 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
CN117313625B (zh) * 2023-11-29 2024-02-09 北京智芯微电子科技有限公司 Mos器件寿命预测方法、装置和电子设备

Family Cites Families (5)

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US5580828A (en) * 1992-12-16 1996-12-03 Semiconductor Physics Laboratory Rt Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material
JP5814558B2 (ja) * 2010-06-30 2015-11-17 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法
JP6152348B2 (ja) * 2013-01-11 2017-06-21 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法
JP5798669B2 (ja) * 2013-12-03 2015-10-21 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価装置
WO2015198604A1 (ja) * 2014-06-26 2015-12-30 株式会社Joled 薄膜トランジスタ及び有機el表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI844077B (zh) * 2021-12-29 2024-06-01 大陸商西安奕斯偉材料科技股份有限公司 藉助少數載子壽命表徵矽片捕獲金屬雜質效率的裝置和方法

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