JP2018014408A5 - - Google Patents
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- Publication number
- JP2018014408A5 JP2018014408A5 JP2016143073A JP2016143073A JP2018014408A5 JP 2018014408 A5 JP2018014408 A5 JP 2018014408A5 JP 2016143073 A JP2016143073 A JP 2016143073A JP 2016143073 A JP2016143073 A JP 2016143073A JP 2018014408 A5 JP2018014408 A5 JP 2018014408A5
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- JP
- Japan
- Prior art keywords
- oxide semiconductor
- microwave
- insulator
- substrate
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 14
- 239000012212 insulator Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 238000011156 evaluation Methods 0.000 claims 5
- 230000005284 excitation Effects 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 3
- 210000004211 gastric acid Anatomy 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000005355 Hall effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016143073A JP6957134B2 (ja) | 2016-07-21 | 2016-07-21 | 酸化物半導体の評価方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016143073A JP6957134B2 (ja) | 2016-07-21 | 2016-07-21 | 酸化物半導体の評価方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018014408A JP2018014408A (ja) | 2018-01-25 |
| JP2018014408A5 true JP2018014408A5 (enExample) | 2019-08-22 |
| JP6957134B2 JP6957134B2 (ja) | 2021-11-02 |
Family
ID=61020987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016143073A Active JP6957134B2 (ja) | 2016-07-21 | 2016-07-21 | 酸化物半導体の評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6957134B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6922826B2 (ja) * | 2018-04-25 | 2021-08-18 | 信越半導体株式会社 | シリコン単結晶基板の選別方法 |
| US11929426B2 (en) | 2018-09-05 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| CN114509450B (zh) * | 2021-12-29 | 2025-02-11 | 西安奕斯伟材料科技股份有限公司 | 借助少子寿命表征硅片吸除金属杂质效率的装置和方法 |
| CN117313625B (zh) * | 2023-11-29 | 2024-02-09 | 北京智芯微电子科技有限公司 | Mos器件寿命预测方法、装置和电子设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580828A (en) * | 1992-12-16 | 1996-12-03 | Semiconductor Physics Laboratory Rt | Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material |
| JP5814558B2 (ja) * | 2010-06-30 | 2015-11-17 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法 |
| JP6152348B2 (ja) * | 2013-01-11 | 2017-06-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法 |
| JP5798669B2 (ja) * | 2013-12-03 | 2015-10-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価装置 |
| WO2015198604A1 (ja) * | 2014-06-26 | 2015-12-30 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ及び有機ｅｌ表示装置 |
-
2016
- 2016-07-21 JP JP2016143073A patent/JP6957134B2/ja active Active
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