JP6949947B2 - チオ(ジ)シラン - Google Patents
チオ(ジ)シラン Download PDFInfo
- Publication number
- JP6949947B2 JP6949947B2 JP2019516471A JP2019516471A JP6949947B2 JP 6949947 B2 JP6949947 B2 JP 6949947B2 JP 2019516471 A JP2019516471 A JP 2019516471A JP 2019516471 A JP2019516471 A JP 2019516471A JP 6949947 B2 JP6949947 B2 JP 6949947B2
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- JP
- Japan
- Prior art keywords
- silane
- bis
- independently
- unsubstituted
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000077 silane Inorganic materials 0.000 title claims description 60
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims description 57
- SCVJRXQHFJXZFZ-KVQBGUIXSA-N 2-amino-9-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-3h-purine-6-thione Chemical compound C1=2NC(N)=NC(=S)C=2N=CN1[C@H]1C[C@H](O)[C@@H](CO)O1 SCVJRXQHFJXZFZ-KVQBGUIXSA-N 0.000 title description 69
- 238000000034 method Methods 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 125000000217 alkyl group Chemical group 0.000 claims description 33
- 239000002243 precursor Substances 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- XHXOKHWXYYOPRI-UHFFFAOYSA-N bis(tert-butylsulfanyl)silane Chemical compound C(C)(C)(C)S[SiH2]SC(C)(C)C XHXOKHWXYYOPRI-UHFFFAOYSA-N 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- -1 t-pentylthio Chemical group 0.000 claims description 20
- 125000003118 aryl group Chemical group 0.000 claims description 18
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 16
- IPNYTXQZZCMYSC-UHFFFAOYSA-N bis(3-methylbutan-2-ylsulfanyl)silane Chemical compound CC(C(C)C)S[SiH2]SC(C(C)C)C IPNYTXQZZCMYSC-UHFFFAOYSA-N 0.000 claims description 15
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 14
- 125000000743 hydrocarbylene group Chemical group 0.000 claims description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 14
- 125000001424 substituent group Chemical group 0.000 claims description 12
- 230000002194 synthesizing effect Effects 0.000 claims description 10
- LFUGMUBNGYDASU-UHFFFAOYSA-N phenylsulfanyl(silyl)silane Chemical compound C1(=CC=CC=C1)S[SiH2][SiH3] LFUGMUBNGYDASU-UHFFFAOYSA-N 0.000 claims description 8
- FLIYBCBHNXDNKV-UHFFFAOYSA-N (2-methylphenyl)sulfanyl-silylsilane Chemical compound CC1=C(C=CC=C1)S[SiH2][SiH3] FLIYBCBHNXDNKV-UHFFFAOYSA-N 0.000 claims description 7
- GFOFKBGNVPCZSU-UHFFFAOYSA-N tert-butylsulfanyl(silyl)silane Chemical compound CC(C)(S[SiH2][SiH3])C GFOFKBGNVPCZSU-UHFFFAOYSA-N 0.000 claims description 7
- QRWPNLCAJOAUIR-UHFFFAOYSA-N (2,6-dimethylphenyl)sulfanylsilane Chemical compound CC1=C(C(=CC=C1)C)S[SiH3] QRWPNLCAJOAUIR-UHFFFAOYSA-N 0.000 claims description 6
- GPIIEZPHSYKZCZ-UHFFFAOYSA-N (2-methylphenyl)sulfanylsilane Chemical compound CC1=C(C=CC=C1)S[SiH3] GPIIEZPHSYKZCZ-UHFFFAOYSA-N 0.000 claims description 6
- QKVZYLSULIBASI-UHFFFAOYSA-N benzylsulfanyl(silyl)silane Chemical compound C(C1=CC=CC=C1)S[SiH2][SiH3] QKVZYLSULIBASI-UHFFFAOYSA-N 0.000 claims description 6
- 125000001246 bromo group Chemical group Br* 0.000 claims description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- PUHJYEDHRBROGY-UHFFFAOYSA-N bis[(2,6-dimethylphenyl)sulfanyl]silane Chemical compound CC1=C(C(=CC=C1)C)S[SiH2]SC1=C(C=CC=C1C)C PUHJYEDHRBROGY-UHFFFAOYSA-N 0.000 claims description 5
- FMBBVWWWXQQGNU-UHFFFAOYSA-N bis[(2-methylphenyl)sulfanyl]silane Chemical compound CC1=C(C=CC=C1)S[SiH2]SC1=C(C=CC=C1)C FMBBVWWWXQQGNU-UHFFFAOYSA-N 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 5
- DSWDPPJBJCXDCZ-UHFFFAOYSA-N ctk0h9754 Chemical compound N[SiH2][SiH3] DSWDPPJBJCXDCZ-UHFFFAOYSA-N 0.000 claims description 5
- IPYSSXZYSKFVMM-UHFFFAOYSA-N dichloro-bis(3-methylbutan-2-ylsulfanyl)silane Chemical compound Cl[Si](SC(C(C)C)C)(SC(C(C)C)C)Cl IPYSSXZYSKFVMM-UHFFFAOYSA-N 0.000 claims description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 5
- WEYRUYIVGMLTBR-UHFFFAOYSA-N 2-methylbutan-2-ylsulfanylsilane Chemical compound C(C)(C)(CC)S[SiH3] WEYRUYIVGMLTBR-UHFFFAOYSA-N 0.000 claims description 4
- 125000003342 alkenyl group Chemical group 0.000 claims description 4
- 125000006193 alkinyl group Chemical group 0.000 claims description 4
- FDPFRODODBSTRX-UHFFFAOYSA-N (2,6-dimethylphenyl)sulfanyl-silylsilane Chemical compound CC1=C(C(=CC=C1)C)S[SiH2][SiH3] FDPFRODODBSTRX-UHFFFAOYSA-N 0.000 claims description 3
- XDXDVOJEHMZMQN-UHFFFAOYSA-N 3-methylbutan-2-ylsulfanyl(silyl)silane Chemical compound CC(C(C)C)S[SiH2][SiH3] XDXDVOJEHMZMQN-UHFFFAOYSA-N 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- PXAGUFZUJYYYCC-UHFFFAOYSA-N 2-methylbutan-2-ylsulfanyl(silyl)silane Chemical compound C(C)(C)(CC)S[SiH2][SiH3] PXAGUFZUJYYYCC-UHFFFAOYSA-N 0.000 claims description 2
- APOXGBDFJVOSST-UHFFFAOYSA-N bis(benzylsulfanyl)-silylsilane Chemical compound C(C1=CC=CC=C1)S[SiH]([SiH3])SCC1=CC=CC=C1 APOXGBDFJVOSST-UHFFFAOYSA-N 0.000 claims description 2
- AXKPMIKUYXIMDA-UHFFFAOYSA-N bis[(2,6-dimethylphenyl)sulfanyl]-silylsilane Chemical compound CC1=C(C(=CC=C1)C)S[SiH]([SiH3])SC1=C(C=CC=C1C)C AXKPMIKUYXIMDA-UHFFFAOYSA-N 0.000 claims description 2
- GRRZXQWTVWTCET-UHFFFAOYSA-N bis[(2-methylphenyl)sulfanyl]-silylsilane Chemical compound CC1=C(C=CC=C1)S[SiH]([SiH3])SC1=C(C=CC=C1)C GRRZXQWTVWTCET-UHFFFAOYSA-N 0.000 claims description 2
- 229910008045 Si-Si Inorganic materials 0.000 claims 3
- 229910006411 Si—Si Inorganic materials 0.000 claims 3
- XAKDMQZQLYAYHJ-UHFFFAOYSA-N bis(2-methylbutan-2-ylsulfanyl)silane Chemical compound C(C)(C)(CC)S[SiH2]SC(C)(C)CC XAKDMQZQLYAYHJ-UHFFFAOYSA-N 0.000 claims 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims 2
- WHSNJGYBGULISJ-UHFFFAOYSA-N bis(2-methylbutan-2-ylsulfanyl)-silylsilane Chemical compound C(C)(C)(CC)S[SiH]([SiH3])SC(C)(C)CC WHSNJGYBGULISJ-UHFFFAOYSA-N 0.000 claims 1
- YTTGZLWJFQRZOL-UHFFFAOYSA-N bis(tert-butylsulfanyl)-silylsilane Chemical compound CC(C)(S[SiH]([SiH3])SC(C)(C)C)C YTTGZLWJFQRZOL-UHFFFAOYSA-N 0.000 claims 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 62
- 239000000203 mixture Substances 0.000 description 51
- 238000004817 gas chromatography Methods 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 33
- 239000011541 reaction mixture Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 24
- 150000004756 silanes Chemical class 0.000 description 22
- 238000009835 boiling Methods 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000003786 synthesis reaction Methods 0.000 description 19
- 125000006659 (C1-C20) hydrocarbyl group Chemical group 0.000 description 18
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 18
- 229910052717 sulfur Inorganic materials 0.000 description 17
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 239000002609 medium Substances 0.000 description 15
- 239000007788 liquid Substances 0.000 description 14
- 239000007787 solid Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 13
- 229910052744 lithium Inorganic materials 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 238000000113 differential scanning calorimetry Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 125000004434 sulfur atom Chemical group 0.000 description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 11
- 239000006227 byproduct Substances 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000011593 sulfur Substances 0.000 description 11
- 238000005481 NMR spectroscopy Methods 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- 239000001307 helium Substances 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- KTGVUIKBOMPNLE-UHFFFAOYSA-N tert-butylsulfanylsilane Chemical compound C(C)(C)(C)S[SiH3] KTGVUIKBOMPNLE-UHFFFAOYSA-N 0.000 description 8
- XEOORFSDPGCQNS-UHFFFAOYSA-N 3-methylbutan-2-ylsulfanylsilane Chemical compound CC(C(C)C)S[SiH3] XEOORFSDPGCQNS-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 238000004508 fractional distillation Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000000746 purification Methods 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 125000004414 alkyl thio group Chemical group 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 238000004821 distillation Methods 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 6
- 125000006526 (C1-C2) alkyl group Chemical group 0.000 description 5
- 125000006736 (C6-C20) aryl group Chemical group 0.000 description 5
- 230000005526 G1 to G0 transition Effects 0.000 description 5
- GNZBDLMUHMACNZ-UHFFFAOYSA-N N-(disilanyl)-N-propan-2-ylpropan-2-amine Chemical class CC(C)N([SiH2][SiH3])C(C)C GNZBDLMUHMACNZ-UHFFFAOYSA-N 0.000 description 5
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 125000005843 halogen group Chemical group 0.000 description 5
- 239000012263 liquid product Substances 0.000 description 5
- 238000010998 test method Methods 0.000 description 5
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000001793 charged compounds Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- FKQUXRVTCCKEGP-UHFFFAOYSA-N phenylsulfanylsilane Chemical compound [SiH3]SC1=CC=CC=C1 FKQUXRVTCCKEGP-UHFFFAOYSA-N 0.000 description 4
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 4
- 238000004366 reverse phase liquid chromatography Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000010189 synthetic method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 125000006528 (C2-C6) alkyl group Chemical group 0.000 description 3
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 3
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- GKFRVGYKWHZCIB-UHFFFAOYSA-N bis(phenylsulfanyl)-silylsilane Chemical compound C1(=CC=CC=C1)S[SiH]([SiH3])SC1=CC=CC=C1 GKFRVGYKWHZCIB-UHFFFAOYSA-N 0.000 description 3
- IUSUJDXRPWXYQM-UHFFFAOYSA-N bis(phenylsulfanyl)silane Chemical compound S(C1=CC=CC=C1)[SiH2]SC1=CC=CC=C1 IUSUJDXRPWXYQM-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000002144 chemical decomposition reaction Methods 0.000 description 3
- 229910052729 chemical element Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 description 2
- 125000006755 (C2-C20) alkyl group Chemical group 0.000 description 2
- 125000006529 (C3-C6) alkyl group Chemical group 0.000 description 2
- BKCNDTDWDGQHSD-UHFFFAOYSA-N 2-(tert-butyldisulfanyl)-2-methylpropane Chemical compound CC(C)(C)SSC(C)(C)C BKCNDTDWDGQHSD-UHFFFAOYSA-N 0.000 description 2
- LXUNZSDDXMPKLP-UHFFFAOYSA-N 2-Methylbenzenethiol Chemical compound CC1=CC=CC=C1S LXUNZSDDXMPKLP-UHFFFAOYSA-N 0.000 description 2
- 125000003542 3-methylbutan-2-yl group Chemical group [H]C([H])([H])C([H])(*)C([H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 102100021202 Desmocollin-1 Human genes 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 101000968043 Homo sapiens Desmocollin-1 Proteins 0.000 description 2
- 101000880960 Homo sapiens Desmocollin-3 Proteins 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004450 alkenylene group Chemical group 0.000 description 2
- 125000000304 alkynyl group Chemical group 0.000 description 2
- 125000004419 alkynylene group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- UENWRTRMUIOCKN-UHFFFAOYSA-N benzyl thiol Chemical compound SCC1=CC=CC=C1 UENWRTRMUIOCKN-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 125000004980 cyclopropylene group Chemical group 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000001640 fractional crystallisation Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 150000008282 halocarbons Chemical class 0.000 description 2
- PQPVPZTVJLXQAS-UHFFFAOYSA-N hydroxy-methyl-phenylsilicon Chemical class C[Si](O)C1=CC=CC=C1 PQPVPZTVJLXQAS-UHFFFAOYSA-N 0.000 description 2
- 230000000155 isotopic effect Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 125000000744 organoheteryl group Chemical group 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KHDSWONFYIAAPE-UHFFFAOYSA-N silicon sulfide Chemical compound S=[Si]=S KHDSWONFYIAAPE-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- ZBPOYCCRLZCMGK-UHFFFAOYSA-N tris(3-methylbutan-2-ylsulfanyl)silane Chemical compound CC(C(C)C)S[SiH](SC(C(C)C)C)SC(C(C)C)C ZBPOYCCRLZCMGK-UHFFFAOYSA-N 0.000 description 2
- QEXNEVSOAHQOFA-UHFFFAOYSA-N tris(tert-butylsulfanyl)silane Chemical compound CC(C)(S[SiH](SC(C)(C)C)SC(C)(C)C)C QEXNEVSOAHQOFA-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZRQWSKKKPVGPLP-UHFFFAOYSA-N (2-methylphenyl)sulfanyl-(2-methylphenyl)sulfanylsilylsilane Chemical compound CC1=C(C=CC=C1)S[SiH2][SiH2]SC1=C(C=CC=C1)C ZRQWSKKKPVGPLP-UHFFFAOYSA-N 0.000 description 1
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 1
- 125000006729 (C2-C5) alkenyl group Chemical group 0.000 description 1
- 125000006651 (C3-C20) cycloalkyl group Chemical group 0.000 description 1
- 125000006555 (C3-C5) cycloalkyl group Chemical group 0.000 description 1
- 125000006835 (C6-C20) arylene group Chemical group 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- KADDBMFRRLUEQZ-UHFFFAOYSA-N 2-(2,6-dimethylphenyl)benzenethiol Chemical compound CC1=CC=CC(C)=C1C1=CC=CC=C1S KADDBMFRRLUEQZ-UHFFFAOYSA-N 0.000 description 1
- LXSNKQKBRBLXSD-UHFFFAOYSA-N 3-methylbutan-2-ylsulfanyl(3-methylbutan-2-ylsulfanylsilyl)silane Chemical compound CC(C(C)C)S[SiH2][SiH2]SC(C(C)C)C LXSNKQKBRBLXSD-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 1
- 125000003601 C2-C6 alkynyl group Chemical group 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NDGSBJSAXJUQTE-UHFFFAOYSA-N azane;phosphorous acid Chemical compound N.OP(O)O NDGSBJSAXJUQTE-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JPPCVVFIYZVUKZ-UHFFFAOYSA-N benzylsulfanylsilane Chemical compound [SiH3]SCc1ccccc1 JPPCVVFIYZVUKZ-UHFFFAOYSA-N 0.000 description 1
- HZXASOJSUIACJT-UHFFFAOYSA-N bis(3-methylbutan-2-ylsulfanyl)-silylsilane Chemical compound CC(C(C)C)S[SiH]([SiH3])SC(C(C)C)C HZXASOJSUIACJT-UHFFFAOYSA-N 0.000 description 1
- LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical class [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 description 1
- GADSHBHCKVKXLO-UHFFFAOYSA-N bis(disilanylsilyl)silane Chemical class [SiH3][SiH2][SiH2][SiH2][SiH2][SiH2][SiH3] GADSHBHCKVKXLO-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000000451 chemical ionisation Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical class C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000003413 degradative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical class C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 description 1
- LICVGLCXGGVLPA-UHFFFAOYSA-N disilanyl(disilanylsilyl)silane Chemical class [SiH3][SiH2][SiH2][SiH2][SiH2][SiH3] LICVGLCXGGVLPA-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- DYZYLTBKMOZKRP-UHFFFAOYSA-N phenylsulfanyl(phenylsulfanylsilyl)silane Chemical compound C1(=CC=CC=C1)S[SiH2][SiH2]SC1=CC=CC=C1 DYZYLTBKMOZKRP-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000010414 supernatant solution Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- LMYKCFSYVQXRTH-UHFFFAOYSA-N tert-butylsulfanyl(tert-butylsulfanylsilyl)silane Chemical compound CC(C)(S[SiH2][SiH2]SC(C)(C)C)C LMYKCFSYVQXRTH-UHFFFAOYSA-N 0.000 description 1
- WMXCDAVJEZZYLT-UHFFFAOYSA-N tert-butylthiol Chemical compound CC(C)(C)S WMXCDAVJEZZYLT-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical class C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
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- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0898—Compounds with a Si-S linkage
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Silicon Compounds (AREA)
Description
Claims (6)
- 式(I−a):
(R1aR1bR1cCS)s(Si−Si)Hh (I−a)
[式中、添字sは、1〜2の整数であり、添字hは、4〜5の整数であり、ただし、s+hの合計=6であり、
Hは、各々独立して、式(I−a)中のケイ素原子のうちの同じもの又は異なるものに結合し、
R1a、R1b、及びR1cは、限定(a)、(b)、又は(c)によって特定され、
(a)は、少なくとも1つのR1aが、独立して、(C1〜C20)アルキル又はフェニルであり、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1〜C20)アルキルであるというものであり、又は、
(b)は、少なくとも1つの基R1aR1bR1cCは、置換基SUBで置換されたか又は非置換の(C6〜C20)アリールであり、添字sが2である場合には、残りの基R1aR1bR1cCは、置換基SUBで置換された(C6〜C20)アリールであるか、あるいは残りの基R1aR1bR1cCのR1a、R1b、及びR1cは、各々独立して、H又は(C1〜C20)アルキルであるというものであり、又は、
(c)は、同じ又は異なるR1aR1bR1cC基におけるR1a、R1b、及びR1c(総称するとR1基)のうちの任意の2つが一緒に結合し、二価の基、−R11−(式中、−R11−は、CH2又は(C3〜C20)アルキレンである。)を形成し、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1〜C20)アルキルであるというものであり、
SUBは、各々独立して、非置換(C1〜C6)アルキル、非置換(C3〜C6)シクロアルキル、非置換(C2〜C6)アルケニル、非置換(C2〜C6)アルキニル、非置換(C6〜C7)アリール、フルオロ、クロロ、又はブロモである。]
の、チオジシラン。 - 添字sは、1であり、添字hは5であり、(C1〜C20)アルキルは、各々独立して、非置換(C1〜C6)アルキルである、請求項1に記載のチオジシラン。
- (1,1−ジメチルエチルチオ)ジシラン、ビス(1,1−ジメチルエチルチオ)ジシラン、(フェニルチオ)ジシラン、(t−ペンチルチオ)ジシラン、ビス(t−ペンチルチオ)ジシラン、(ベンジルチオ)ジシラン、ビス(ベンジルチオ)ジシラン、(2−メチルフェニルチオ)ジシラン、ビス(2−メチルフェニルチオ)ジシラン、(2,6−ジメチルフェニルチオ)ジシラン、ビス(2,6−ジメチルフェニルチオ)ジシラン、ビス(1,2−ジメチルプロピルチオ)ジシラン、及び(1,2−ジメチルプロピルチオ)ジシランから選択される、請求項1に記載のチオジシラン。
- 式(II):(R2 2N)(n+s)(Si−Si)Hh(II)のアミノジシランを、式(III):R1aR1bR1cCSH(III)のオルガノチオールと20℃〜120℃の温度で接触させ、式(IV):(R1aR1bR1cCS)s(R2 2N)n(Si−Si)Hh(IV)
[式中、
添字sは、1〜2の整数であり、
添字nは、0であり、
添字hは、4〜5の整数であり、
ただし、s+n+hの合計=6であり、
Hは、各々独立して、式(IV)中のケイ素原子のうちの同じもの又は異なるものに結合し、
R1a、R1b、及びR1cは、限定(a)、(b)、又は(c)によって特定され、
(a)は、少なくとも1つのR1aが、独立して、(C1〜C20)アルキル又はフェニルであり、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1〜C20)アルキルであるというものであり、又は、
(b)は、少なくとも1つの基R1aR1bR1cCは、置換基SUBで置換されたか又は非置換の(C6〜C20)アリールであり、添字sが2である場合には、残りの基R1aR1bR1cは、置換基SUBで置換されたか又は非置換の(C6〜C20)アリールであるか、あるいは残りの基R1aR1bR1cCのR1a、R1b、及びR1cは、各々独立して、H又は(C1〜C20)アルキルであるというものであり、又は、
(c)は、同じ又は異なるR1aR1bR1cC基におけるR1a、R1b、及びR1c(総称するとR1基)のうちの任意の2つが一緒に結合し、二価の基、−R11−(式中、−R11−は、CH2又は(C3〜C20)アルキレンである。)を形成し、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1〜C20)アルキルであるというものであり、
R2は、各々独立して、H又は(C1〜C20)ヒドロカルビルであり、又は任意の2つのR2基が一緒に結合し、二価の基、−R22−(式中、−R22−は、(C2〜C20)ヒドロカルビレンである。)を形成してもよく、任意の残りのR2基は、各々独立して、H又は(C1〜C20)ヒドロカルビルであり、
ヒドロカルビル及びヒドロカルビレンは、各々独立して、非置換であるか又は1つ〜5つの置換基SUBで置換されており、
SUBは、各々独立して、非置換(C1〜C5)アルキル、非置換(C3〜C5)シクロアルキル、非置換(C2〜C5)アルケニル、非置換(C2〜C5)アルキニル、非置換(C6〜C7)アリール、フルオロ、クロロ、又はブロモである。]
のチオジシランを得ることを含む、チオジシランの合成方法。 - ビス(1,1−ジメチルエチルチオ)シラン、ビス(1,2−ジメチルプロピルチオ)シラン、ビス(t−ペンチルチオ)シラン、ジクロロ−ビス(1,2−ジメチルプロピルチオ)シラン、t−ペンチルチオシラン、(2−メチルフェニルチオ)シラン、ビス(2−メチルフェニルチオ)シラン、(2,6−ジメチルフェニルチオ)シラン、又はビス(2,6−ジメチルフェニルチオ)シランからなる群から選択されるチオシランであるケイ素生成前駆体。
- ビス(1,1−ジメチルエチルチオ)シラン、ビス(1,2−ジメチルプロピルチオ)シラン、ビス(t−ペンチルチオ)シラン、t−ペンチルチオシラン、(2−メチルフェニルチオ)シラン、ビス(2−メチルフェニルチオ)シラン、(2,6−ジメチルフェニルチオ)シラン、又はビス(2,6−ジメチルフェニルチオ)シランからなる群から選択されるチオシランであるケイ素生成前駆体を合成する方法であって、
式(B):(R2 2N)s(Si)Hh(B)のアミノシランを、式(C):R1aR1bR1cCSH(C)のオルガノチオールと20℃〜120℃の温度で接触させ、式(D):(R1aR1bR1cCS)s(Si)Hh(D)
[式中、
添字sは、1〜4の整数であり、
添字hは、0〜3の整数であり、
ただし、s+hの合計=4であり、
R2は、各々独立して、H又は(C1〜C20)ヒドロカルビルであり、又は任意の2つのR2基が一緒に結合し、二価の基、−R22−(式中、−R22−は、(C2〜C20)ヒドロカルビレンである。)を形成してもよく、任意の残りのR2基は、各々独立して、H又は(C1〜C20)ヒドロカルビルであり、
R1a、R1b、及びR1cは、限定(a)、(b)、又は(c)によって特定され、(a)は、R1aが、(C1〜C6)アルキルであり、R1bが、(C2〜C6)アルキル又はHであり、R1cが、Hであるというものであり、又は、(b)は、R1a、R1b、及びR1cが、各々独立して、(C1〜C6)アルキルであるというものであり、(c)は、R1aR1bR1cCが、非置換フェニル基又は1つ以上のメチル基で置換されたフェニル基を表すというものであり、
アルキルは、各々、非置換である。]
のチオシランを得る、ケイ素生成前駆体の合成方法。
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