JP2019537279A - チオ(ジ)シラン - Google Patents
チオ(ジ)シラン Download PDFInfo
- Publication number
- JP2019537279A JP2019537279A JP2019540298A JP2019540298A JP2019537279A JP 2019537279 A JP2019537279 A JP 2019537279A JP 2019540298 A JP2019540298 A JP 2019540298A JP 2019540298 A JP2019540298 A JP 2019540298A JP 2019537279 A JP2019537279 A JP 2019537279A
- Authority
- JP
- Japan
- Prior art keywords
- silane
- bis
- disilane
- silicon
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910000077 silane Inorganic materials 0.000 title claims description 91
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims description 90
- SCVJRXQHFJXZFZ-KVQBGUIXSA-N 2-amino-9-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-3h-purine-6-thione Chemical compound C1=2NC(N)=NC(=S)C=2N=CN1[C@H]1C[C@H](O)[C@@H](CO)O1 SCVJRXQHFJXZFZ-KVQBGUIXSA-N 0.000 title description 82
- 238000000034 method Methods 0.000 claims abstract description 186
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 230000008569 process Effects 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 59
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 229910008045 Si-Si Inorganic materials 0.000 claims abstract 3
- 229910006411 Si—Si Inorganic materials 0.000 claims abstract 3
- 125000000446 sulfanediyl group Chemical group *S* 0.000 claims description 81
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 49
- 239000002243 precursor Substances 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 239000000376 reactant Substances 0.000 claims description 30
- -1 thio disilane Chemical compound 0.000 claims description 30
- 125000006659 (C1-C20) hydrocarbyl group Chemical group 0.000 claims description 26
- XHXOKHWXYYOPRI-UHFFFAOYSA-N bis(tert-butylsulfanyl)silane Chemical group C(C)(C)(C)S[SiH2]SC(C)(C)C XHXOKHWXYYOPRI-UHFFFAOYSA-N 0.000 claims description 26
- 229910021529 ammonia Inorganic materials 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 25
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 125000003118 aryl group Chemical group 0.000 claims description 18
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- 229910020346 SiS 2 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- LFUGMUBNGYDASU-UHFFFAOYSA-N phenylsulfanyl(silyl)silane Chemical compound C1(=CC=CC=C1)S[SiH2][SiH3] LFUGMUBNGYDASU-UHFFFAOYSA-N 0.000 claims description 16
- IPNYTXQZZCMYSC-UHFFFAOYSA-N bis(3-methylbutan-2-ylsulfanyl)silane Chemical compound CC(C(C)C)S[SiH2]SC(C(C)C)C IPNYTXQZZCMYSC-UHFFFAOYSA-N 0.000 claims description 15
- 239000006227 byproduct Substances 0.000 claims description 15
- 125000000743 hydrocarbylene group Chemical group 0.000 claims description 13
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- KHDSWONFYIAAPE-UHFFFAOYSA-N silicon sulfide Chemical compound S=[Si]=S KHDSWONFYIAAPE-UHFFFAOYSA-N 0.000 claims description 12
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 10
- 125000001424 substituent group Chemical group 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- FLIYBCBHNXDNKV-UHFFFAOYSA-N (2-methylphenyl)sulfanyl-silylsilane Chemical compound CC1=C(C=CC=C1)S[SiH2][SiH3] FLIYBCBHNXDNKV-UHFFFAOYSA-N 0.000 claims description 7
- 125000005843 halogen group Chemical group 0.000 claims description 7
- GPIIEZPHSYKZCZ-UHFFFAOYSA-N (2-methylphenyl)sulfanylsilane Chemical compound CC1=C(C=CC=C1)S[SiH3] GPIIEZPHSYKZCZ-UHFFFAOYSA-N 0.000 claims description 6
- 125000006526 (C1-C2) alkyl group Chemical group 0.000 claims description 6
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 claims description 6
- 125000006736 (C6-C20) aryl group Chemical group 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QKVZYLSULIBASI-UHFFFAOYSA-N benzylsulfanyl(silyl)silane Chemical compound C(C1=CC=CC=C1)S[SiH2][SiH3] QKVZYLSULIBASI-UHFFFAOYSA-N 0.000 claims description 6
- 125000001246 bromo group Chemical group Br* 0.000 claims description 6
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- FKQUXRVTCCKEGP-UHFFFAOYSA-N phenylsulfanylsilane Chemical compound [SiH3]SC1=CC=CC=C1 FKQUXRVTCCKEGP-UHFFFAOYSA-N 0.000 claims description 6
- GFOFKBGNVPCZSU-UHFFFAOYSA-N tert-butylsulfanyl(silyl)silane Chemical group CC(C)(S[SiH2][SiH3])C GFOFKBGNVPCZSU-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001868 water Inorganic materials 0.000 claims description 6
- QRWPNLCAJOAUIR-UHFFFAOYSA-N (2,6-dimethylphenyl)sulfanylsilane Chemical compound CC1=C(C(=CC=C1)C)S[SiH3] QRWPNLCAJOAUIR-UHFFFAOYSA-N 0.000 claims description 5
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 claims description 5
- IPYSSXZYSKFVMM-UHFFFAOYSA-N dichloro-bis(3-methylbutan-2-ylsulfanyl)silane Chemical compound Cl[Si](SC(C(C)C)C)(SC(C(C)C)C)Cl IPYSSXZYSKFVMM-UHFFFAOYSA-N 0.000 claims description 5
- 125000006528 (C2-C6) alkyl group Chemical group 0.000 claims description 4
- WEYRUYIVGMLTBR-UHFFFAOYSA-N 2-methylbutan-2-ylsulfanylsilane Chemical compound C(C)(C)(CC)S[SiH3] WEYRUYIVGMLTBR-UHFFFAOYSA-N 0.000 claims description 4
- 125000003601 C2-C6 alkynyl group Chemical group 0.000 claims description 4
- FMBBVWWWXQQGNU-UHFFFAOYSA-N bis[(2-methylphenyl)sulfanyl]silane Chemical compound CC1=C(C=CC=C1)S[SiH2]SC1=C(C=CC=C1)C FMBBVWWWXQQGNU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 4
- FDPFRODODBSTRX-UHFFFAOYSA-N (2,6-dimethylphenyl)sulfanyl-silylsilane Chemical compound CC1=C(C(=CC=C1)C)S[SiH2][SiH3] FDPFRODODBSTRX-UHFFFAOYSA-N 0.000 claims description 3
- 125000006755 (C2-C20) alkyl group Chemical group 0.000 claims description 3
- 125000006529 (C3-C6) alkyl group Chemical group 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- GKFRVGYKWHZCIB-UHFFFAOYSA-N bis(phenylsulfanyl)-silylsilane Chemical compound C1(=CC=CC=C1)S[SiH]([SiH3])SC1=CC=CC=C1 GKFRVGYKWHZCIB-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- GURVCKNCJWGWJB-UHFFFAOYSA-N 1,4,2,3-dithiadisilinane Chemical compound [SiH2]1[SiH2]SCCS1 GURVCKNCJWGWJB-UHFFFAOYSA-N 0.000 claims description 2
- UKLFXHUWFKSSSI-UHFFFAOYSA-N 2,2,3,3-tetramethyl-1,4,2,3-dithiadisilinane Chemical compound C[Si]1([Si](SCCS1)(C)C)C UKLFXHUWFKSSSI-UHFFFAOYSA-N 0.000 claims description 2
- PXAGUFZUJYYYCC-UHFFFAOYSA-N 2-methylbutan-2-ylsulfanyl(silyl)silane Chemical compound C(C)(C)(CC)S[SiH2][SiH3] PXAGUFZUJYYYCC-UHFFFAOYSA-N 0.000 claims description 2
- XDXDVOJEHMZMQN-UHFFFAOYSA-N 3-methylbutan-2-ylsulfanyl(silyl)silane Chemical compound CC(C(C)C)S[SiH2][SiH3] XDXDVOJEHMZMQN-UHFFFAOYSA-N 0.000 claims description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- YXZZSTPCAQQBMJ-UHFFFAOYSA-N [dimethyl(methylsulfanyl)silyl]-dimethyl-methylsulfanylsilane Chemical compound CS[Si](C)(C)[Si](C)(C)SC YXZZSTPCAQQBMJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- WHSNJGYBGULISJ-UHFFFAOYSA-N bis(2-methylbutan-2-ylsulfanyl)-silylsilane Chemical compound C(C)(C)(CC)S[SiH]([SiH3])SC(C)(C)CC WHSNJGYBGULISJ-UHFFFAOYSA-N 0.000 claims description 2
- APOXGBDFJVOSST-UHFFFAOYSA-N bis(benzylsulfanyl)-silylsilane Chemical compound C(C1=CC=CC=C1)S[SiH]([SiH3])SCC1=CC=CC=C1 APOXGBDFJVOSST-UHFFFAOYSA-N 0.000 claims description 2
- LBAIODMLBCWINH-UHFFFAOYSA-N bis(butylsulfanyl)-dichlorosilane Chemical compound Cl[Si](SCCCC)(SCCCC)Cl LBAIODMLBCWINH-UHFFFAOYSA-N 0.000 claims description 2
- YAHLTCMPIJBVCA-UHFFFAOYSA-N bis(tert-butylsulfanyl)-dichlorosilane Chemical compound CC(C)(C)S[Si](Cl)(Cl)SC(C)(C)C YAHLTCMPIJBVCA-UHFFFAOYSA-N 0.000 claims description 2
- GRRZXQWTVWTCET-UHFFFAOYSA-N bis[(2-methylphenyl)sulfanyl]-silylsilane Chemical compound CC1=C(C=CC=C1)S[SiH]([SiH3])SC1=C(C=CC=C1)C GRRZXQWTVWTCET-UHFFFAOYSA-N 0.000 claims description 2
- URQHDLDJZZGGCF-UHFFFAOYSA-N butylsulfanyl(trichloro)silane Chemical compound Cl[Si](SCCCC)(Cl)Cl URQHDLDJZZGGCF-UHFFFAOYSA-N 0.000 claims description 2
- BNHJAYXQRWLMDK-UHFFFAOYSA-N butylsulfanyl-(butylsulfanyl-chloro-methylsilyl)-chloro-methylsilane Chemical compound C(CCC)S[Si]([Si](C)(Cl)SCCCC)(C)Cl BNHJAYXQRWLMDK-UHFFFAOYSA-N 0.000 claims description 2
- RLRYWMVSCSPFEO-UHFFFAOYSA-N butylsulfanyl-[butylsulfanyl(dimethyl)silyl]-dimethylsilane Chemical compound CCCCS[Si](C)(C)[Si](C)(C)SCCCC RLRYWMVSCSPFEO-UHFFFAOYSA-N 0.000 claims description 2
- DWYXFKDWSYUYAT-UHFFFAOYSA-N chloro-tris(methylsulfanyl)silane Chemical compound CS[Si](Cl)(SC)SC DWYXFKDWSYUYAT-UHFFFAOYSA-N 0.000 claims description 2
- XLDWSZCUIZZGJA-UHFFFAOYSA-N chloro-tris(propan-2-ylsulfanyl)silane Chemical compound Cl[Si](SC(C)C)(SC(C)C)SC(C)C XLDWSZCUIZZGJA-UHFFFAOYSA-N 0.000 claims description 2
- SZVDMSNTXOSPCA-UHFFFAOYSA-N dichloro-bis(ethylsulfanyl)silane Chemical compound C(C)S[Si](Cl)(Cl)SCC SZVDMSNTXOSPCA-UHFFFAOYSA-N 0.000 claims description 2
- KOLVKRFRSBXFEQ-UHFFFAOYSA-N ethylsulfanyl-[ethylsulfanyl(dimethyl)silyl]-dimethylsilane Chemical compound C[Si]([Si](SCC)(C)C)(SCC)C KOLVKRFRSBXFEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- 150000002466 imines Chemical class 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- YRLPGGMKJCGSPK-UHFFFAOYSA-N methylsulfanyl(silyl)silane Chemical group CS[SiH2][SiH3] YRLPGGMKJCGSPK-UHFFFAOYSA-N 0.000 claims description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 2
- DYZYLTBKMOZKRP-UHFFFAOYSA-N phenylsulfanyl(phenylsulfanylsilyl)silane Chemical compound C1(=CC=CC=C1)S[SiH2][SiH2]SC1=CC=CC=C1 DYZYLTBKMOZKRP-UHFFFAOYSA-N 0.000 claims description 2
- FZGOCCJHZCYQJC-UHFFFAOYSA-N tert-butylsulfanyl(trichloro)silane Chemical compound Cl[Si](SC(C)(C)C)(Cl)Cl FZGOCCJHZCYQJC-UHFFFAOYSA-N 0.000 claims description 2
- NLUONSMREZILFO-UHFFFAOYSA-N tert-butylsulfanyl-(tert-butylsulfanyl-chloro-methylsilyl)-chloro-methylsilane Chemical compound Cl[Si]([Si](C)(SC(C)(C)C)Cl)(C)SC(C)(C)C NLUONSMREZILFO-UHFFFAOYSA-N 0.000 claims description 2
- LOPUOENYACGDLB-UHFFFAOYSA-N tert-butylsulfanyl-[tert-butylsulfanyl(dimethyl)silyl]-dimethylsilane Chemical compound CC(C)(C)S[Si]([Si](C)(C)SC(C)(C)C)(C)C LOPUOENYACGDLB-UHFFFAOYSA-N 0.000 claims description 2
- DURQIWJRQXFKEZ-UHFFFAOYSA-N tetrakis(ethylsulfanyl)silane Chemical compound CCS[Si](SCC)(SCC)SCC DURQIWJRQXFKEZ-UHFFFAOYSA-N 0.000 claims description 2
- BRLHRQAFZTXXIG-UHFFFAOYSA-N tetrakis(methylsulfanyl)silane Chemical compound CS[Si](SC)(SC)SC BRLHRQAFZTXXIG-UHFFFAOYSA-N 0.000 claims description 2
- RQZWCRLMTODERI-UHFFFAOYSA-N tetrakis(propan-2-ylsulfanyl)silane Chemical compound CC(C)S[Si](SC(C)C)(SC(C)C)SC(C)C RQZWCRLMTODERI-UHFFFAOYSA-N 0.000 claims description 2
- VRMNHHCDVRFOEZ-UHFFFAOYSA-N tetrakis(propylsulfanyl)silane Chemical compound C(CC)S[Si](SCCC)(SCCC)SCCC VRMNHHCDVRFOEZ-UHFFFAOYSA-N 0.000 claims description 2
- YMRKMFLMWLUVBE-UHFFFAOYSA-N trichloro(ethylsulfanyl)silane Chemical compound Cl[Si](SCC)(Cl)Cl YMRKMFLMWLUVBE-UHFFFAOYSA-N 0.000 claims description 2
- NYSGQCVVQYYCEY-UHFFFAOYSA-N tris(ethylsulfanyl)silane Chemical compound CCS[SiH](SCC)SCC NYSGQCVVQYYCEY-UHFFFAOYSA-N 0.000 claims description 2
- NJATYBYLOPBRHG-UHFFFAOYSA-N tris(methylsulfanyl)silane Chemical group CS[SiH](SC)SC NJATYBYLOPBRHG-UHFFFAOYSA-N 0.000 claims description 2
- GAGPUDSUESSCNJ-UHFFFAOYSA-N tris(propylsulfanyl)silane Chemical compound C(CC)S[SiH](SCCC)SCCC GAGPUDSUESSCNJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 2
- LOOPSTKUELJHIY-UHFFFAOYSA-N C(CCC)S[SiH2][SiH3] Chemical compound C(CCC)S[SiH2][SiH3] LOOPSTKUELJHIY-UHFFFAOYSA-N 0.000 claims 1
- 125000000304 alkynyl group Chemical group 0.000 claims 1
- JPPCVVFIYZVUKZ-UHFFFAOYSA-N benzylsulfanylsilane Chemical compound [SiH3]SCc1ccccc1 JPPCVVFIYZVUKZ-UHFFFAOYSA-N 0.000 claims 1
- 239000004305 biphenyl Substances 0.000 claims 1
- HZXASOJSUIACJT-UHFFFAOYSA-N bis(3-methylbutan-2-ylsulfanyl)-silylsilane Chemical compound CC(C(C)C)S[SiH]([SiH3])SC(C(C)C)C HZXASOJSUIACJT-UHFFFAOYSA-N 0.000 claims 1
- YTTGZLWJFQRZOL-UHFFFAOYSA-N bis(tert-butylsulfanyl)-silylsilane Chemical compound CC(C)(S[SiH]([SiH3])SC(C)(C)C)C YTTGZLWJFQRZOL-UHFFFAOYSA-N 0.000 claims 1
- 238000009472 formulation Methods 0.000 claims 1
- BCQFIRARHXNLPR-UHFFFAOYSA-N tris(propan-2-ylsulfanyl)silane Chemical compound CC(C)S[SiH](SC(C)C)SC(C)C BCQFIRARHXNLPR-UHFFFAOYSA-N 0.000 claims 1
- 102220644355 Laminin subunit alpha-5_R22N_mutation Human genes 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 37
- 238000004817 gas chromatography Methods 0.000 description 35
- 239000011541 reaction mixture Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 21
- 238000005227 gel permeation chromatography Methods 0.000 description 20
- 238000002347 injection Methods 0.000 description 20
- 239000007924 injection Substances 0.000 description 20
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000009835 boiling Methods 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 238000003786 synthesis reaction Methods 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 150000004756 silanes Chemical class 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 229910052717 sulfur Inorganic materials 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- 239000002609 medium Substances 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- 239000000047 product Substances 0.000 description 14
- 239000007787 solid Substances 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 13
- 229910052744 lithium Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 238000000113 differential scanning calorimetry Methods 0.000 description 12
- 125000004434 sulfur atom Chemical group 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 238000005481 NMR spectroscopy Methods 0.000 description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 239000011593 sulfur Substances 0.000 description 11
- KTGVUIKBOMPNLE-UHFFFAOYSA-N tert-butylsulfanylsilane Chemical compound C(C)(C)(C)S[SiH3] KTGVUIKBOMPNLE-UHFFFAOYSA-N 0.000 description 11
- 239000002904 solvent Substances 0.000 description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 239000001307 helium Substances 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- 238000003775 Density Functional Theory Methods 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 6
- 238000004821 distillation Methods 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 6
- 238000010998 test method Methods 0.000 description 6
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 6
- XEOORFSDPGCQNS-UHFFFAOYSA-N 3-methylbutan-2-ylsulfanylsilane Chemical compound CC(C(C)C)S[SiH3] XEOORFSDPGCQNS-UHFFFAOYSA-N 0.000 description 5
- 230000005526 G1 to G0 transition Effects 0.000 description 5
- GNZBDLMUHMACNZ-UHFFFAOYSA-N N-(disilanyl)-N-propan-2-ylpropan-2-amine Chemical compound CC(C)N([SiH2][SiH3])C(C)C GNZBDLMUHMACNZ-UHFFFAOYSA-N 0.000 description 5
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
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Abstract
Description
堆積ツール:Veeco Cambridge Nanotech Systems Fiji
楕円偏光計:Ja Woollam M2000in situ楕円偏光計
ガス流:
BBTS:0.5〜8秒間の注入パルス持続時間
アルゴン:130sccm
オゾン:0.5〜2秒間の注入パルス持続時間
Claims (15)
- ケイ素含有膜を基材上に形成する方法であって、
前記基材上に配置されたケイ素含有膜を得るために、化学蒸着(CVD)又は原子層堆積(ALD)プロセスにおいて、熱又はプラズマ条件下で、式(I)(R1aR1bR1cCS)s(R2 2N)n(Si−Si)XxHh(I)
[式中、添字sは、1〜6の整数であり、添字nは、0〜5の整数であり、添字xは、0〜5の整数であり、添字hは、0〜5の整数であり、ただし、s+n+x+hの合計=6であり、
Hは、各々独立して、式(I)中に存在する場合(すなわち、添字hが1〜5である場合)、式(I)中のケイ素原子のうちの同じもの又は異なるものに結合し、
Xは、各々独立して、一価のハロゲン原子F、Cl、I、又はBrであり、式(I)中に存在する場合(すなわち、添字xが1〜5である場合)、式(I)中のケイ素原子のうちの同じもの又は異なるものに結合し、
R1a、R1b、及びR1cは、限定(a)、(b)、又は(c)によって特定され、
(a)は、少なくとも1つのR1aが、独立して、(C2−C20)アルキル又はフェニルであり、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1−C20)ヒドロカルビルであるというものであり、又は
(b)は、独立して置換又は非置換の(C6−C20)アリールである少なくとも1つの基R1aR1bR1cCが存在し、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1−C20)ヒドロカルビルであるというものであり、又は
(c)は、同じ又は異なるR1aR1bR1cC基におけるR1a、R1b、及びR1c(総称するとR1基)のうちの任意の2つが一緒に結合し、二価の基、−R11−(式中、−R11−は、CH2又は(C3−C20)ヒドロカルビレンである。)を形成し、任意の残りのR1a、R1b、及びR1cは、各々独立して、H又は(C1−C20)ヒドロカルビルであるというものであり、
R2は、各々独立して、H又は(C1−C20)ヒドロカルビルであり、又は任意の2つのR2基が一緒に結合し、二価の基、−R22−(式中、−R22−は、(C2−C20)ヒドロカルビレンである。)を形成してもよく、任意の残りのR2基は、各々独立して、H又は(C1−C20)ヒドロカルビルであり、
ヒドロカルビル及びヒドロカルビレンは、各々独立して、非置換であるか、又は1つ〜5つの置換基SUBで置換されており、
SUBは、各々独立して、非置換(C1−C6)アルキル、非置換(C3−C6)シクロアルキル、
非置換(C2−C6)アルケニル、非置換(C2−C6)アルキニル、非置換(C6−C7)アリール、フルオロ、クロロ、又はブロモである。]
によるチオジシランを加熱すること、を含む、方法。 - 式中、添字sは、1〜4の整数であり、添字nは、0〜2の整数であり、添字xは、0〜2の整数であり、添字hは、0〜2の整数であり、ただし、s+n+x+hの合計=6であり、X、R1a、R1b、R1c、及びR2は、式(I)について上記定義したとおりである、又は
式中、添字sは、1〜4の整数であり、添字n及びxは、各々、0であり、添字hは、2〜5であり、ただし、s+hの合計=6であり、R1a、R1b、及びR1cは、式(I)について上記定義したとおりである、又は
式中、添字sは、1〜4の整数であり、添字n及びhは、各々独立して、1〜5であり、添字xは、0であり、ただし、s+n+hの合計=6であり、R1a、R1b、R1c、及びR2は、式(I)について上記定義したとおりである、
請求項1に記載の方法。 - Xは、各々、Clであり、(C1−C20)ヒドロカルビルは、各々独立して、(C1−C12)ヒドロカルビル、(C1−C8)ヒドロカルビル、又は(C3−C8)ヒドロカルビルであり、ヒドロカルビルは、各々、非置換アルキル、置換アルキル、非置換アリール、若しくはアルキル置換アリールであり、又は添字sは1又は2であり、各XはClであり、(C1−C20)ヒドロカルビルは、各々独立して、(C1−C12)ヒドロカルビル、(C1−C8)ヒドロカルビル、又は(C3−C8)ヒドロカルビルであり、ヒドロカルビルは、各々、非置換アルキル、置換アルキル、非置換アリール、又はアルキル置換アリールである、請求項1又は2に記載の方法。
- 前記チオシランが、式(I−a)、
(R1aR1bR1cCS)s(Si−Si)Hh(I−a)
[式中、添字sは、1〜6の整数であり、添字hは、0〜5の整数であり、ただし、s+hの合計=6であり、R1a、R1b、及びR1cは、請求項1において上記定義したとおりである。]によるものである、請求項1に記載の方法。 - 添字sは、1〜3の整数であり、添字hは、3〜5の整数であり、(C1−C20)ヒドロカルビルは、各々独立して、非置換(C1−C6)アルキル、置換(C1−C6)アルキル、非置換アリール、又は(C1−C3)アルキル置換(C6)アリールであり、又は前記チオジシランは、(1,1−ジメチルエチルチオ)ジシラン、ビス(1,1−ジメチルエチルチオ)ジシラン、(フェニルチオ)ジシラン、ビス(フェニルチオ)ジシラン、(t−ペンチルチオ)ジシラン、ビス(t−ペンチルチオ)ジシラン、(ベンジルチオ)ジシラン、ビス(ベンジルチオ)ジシラン、(2−メチルフェニルチオ)ジシラン、ビス(2−メチルフェニルチオ)ジシラン、(2,6−ジメチルフェニルチオ)ジシラン、ビス(2,6−ジメチルフェニルチオ)ジシラン、1,1−ジフェニルチオジシラン、(1,2−ジメチルプロピルチオ)ジシラン、及びビス(1,2−ジメチルプロピルチオ)ジシランから選択される、請求項4に記載の方法。
- 基材上に膜を形成する方法であって、
前記基材上に配置されたケイ素含有膜を得るために、化学蒸着(CVD)又は原子層堆積(ALD)プロセスにおいて、熱又はプラズマ条件下で、式(A)
(R1aR1bR1cCS)s(Si)XxHh(A)
[式中、
添字sは、1〜4の整数であり、
添字xは、0〜3の整数であり、
添字hは、0〜3の整数であり、
ただし、s+x+hの合計=4であり、
Xは、各々、一価のハロゲン原子、F、Cl、又はBrであり、
R1a、R1b、及びR1cは、限定(a)、(b)、又は(c)によって特定され、(a)は、R1aが、(C1−C6)アルキルであり、R1bが、(C2−C6)アルキル又はHであり、R1cが、Hであるというものであり、(b)は、R1a、R1b、及びR1cが、各々独立して、(C1−C6)アルキルであるというものであり、(c)は、R1aR1bR1cCが、一緒になって、置換フェニル基、又は非置換フェニル基(前記フェニル基上の置換基は1つ以上のメチル基である。)を表すというものであり、
アルキルは、各々独立して、非置換であるか、又は1つ〜5つの置換基SUBで置換されており、
SUBは、各々独立して、非置換(C1−C6)アルキル、非置換(C3−C6)シクロアルキル、非置換(C2−C6)アルケニル、非置換(C2−C6)アルキニル、非置換(C6−C7)アリール、フルオロ、クロロ、又はブロモである。]
のチオシランを加熱すること、を含む、方法。 - 式中、sは2であり、xは2であり、hは0であり、R1aは(C1−C6)アルキル、R1bは(C3−C6)アルキル、R1cはHであり、又は、R1aは(C1−C2)アルキル、R1bは(C3−C4)アルキル、R1cはHであり、又は、R1a、R1b、及びR1cは、各々独立して、(C1−C6)アルキルであり、又は、R1a、R1b、及びR1cは、各々独立して、(C1−C2)アルキルである、請求項6に記載の方法。
- 前記チオシランがビス(1,1−ジメチルエチルチオ)シラン、ビス(1,2−ジメチルプロピルチオ)シラン、ジクロロ−ビス(1,2−ジメチルプロピルチオ)シラン、t−ペンチルチオシラン、ビス(フェニルチオ)シラン、フェニルチオシラン、(ベンジルチオ)シラン、(2−メチルフェニルチオ)シラン、ビス(2−メチルフェニルチオ)シラン、(2,6−ジメチルフェニルチオ)シラン、ビス(2,6−ジメチルフェニルチオ)シラン、又はビス(2−メチル−フェニルチオ)シランである、請求項6又は7に記載の方法。
- 前記CVD又はALDプロセスにおいて共反応物を加熱すること、を更に含む、請求項1〜8のいずれか一項に記載の方法。
- 基材上にケイ素含有膜を堆積する方法であって、前記基材上に配置されたケイ素含有膜を得るために、化学蒸着(CVD)又は原子層堆積(ALD)プロセスにおいて、熱又はプラズマ条件下で、共反応物及びチオ(ジ)シランを加熱すること、を含み、前記チオ(ジ)シランが、メチルチオ−ジシラン、1,2−ビス(フェニルチオ)ジシラン、1,4−ジチア−2,3−ジシラシクロヘキサン、2,2,3,3,−テトラメチル−1,4−ジチア−2,3−ジシラシクロヘキサン、2,3−ジヒドロ−2,2,3,3,−テトラメチル−1,4,2,3−ベンゾジチアジシラン、1,1,2,2−テトラメチル−1,2−ビス(メチルチオ)−ジシラン、1,1,2,2−テトラメチル−1,2−ビス(エチルチオ)−ジシラン、1,1,2,2−テトラメチル−1,2−ビス(プロピルチオ)−ジシラン、1,1,2,2−テトラメチル−1,2−ビス(ブチルチオ)−ジシラン、1−クロロ−,1,2,2−トリメチル−1,2−ビス(ブチルチオ)−ジシラン、1,2−ビス(ブチルチオ)−1,2−ジクロロ−1,2−ジメチル−ジシラン、1,2−ビス[(1,1−ジメチルエチル)チオ]−1,1,2,2−テトラメチル−ジシラン、1,2−ジクロロ−1,2−ビス[(1,1−ジメチルエチル)チオ]−1,2−ジメチル−ジシラン、及びジヒドロ−2,2,4,6,6,8−ヘキサメチル−[1,4,2,3]ジチアジシロロ[2,3−b][1,4,2,3]ジチアジシロロールからなる群から選択されるチオジシランである、方法。
- 基材上にケイ素含有膜を堆積する方法であって、前記基材上に配置されたケイ素含有膜を得るために、化学蒸着(CVD)又は原子層堆積(ALD)プロセスにおいて、熱又はプラズマ条件下で、共反応物及びチオ(ジ)シランを加熱すること、を含み、前記チオ(ジ)シランが、トリ(メチルチオ)シラン、トリ(エチルチオ)シラン、トリ(プロピルチオ)シラン、トリ(1−メチルエチルチオ)シラン、トリクロロ−(エチルチオ)シラン、トリクロロ−(ブチルチオ)シラン、トリクロロ−(1,1−ジメチルエチルチオ)シラン、ジクロロ−ジ(エチルチオ)シラン、ジクロロ−ジ(ブチルチオ)シラン、ジクロロ−ジ(1,1−ジメチルエチルチオ)シラン、クロロ−トリ(メチルチオ)シラン、クロロ−トリ(エチルチオ)シラン、クロロ−トリ(プロピルチオ)シラン、クロロ−トリ(1−メチルエチルチオ)シラン、テトラ(メチルチオ)シラン、テトラ(エチルチオ)シラン、テトラ(プロピルチオ)シラン、及びテトラ(1−メチルエチルチオ)シランからなる群から選択されるチオシランである、方法。
- 前記共反応物が硫化水素又は二硫化水素を含み、前記膜が硫化ケイ素を含むものである、前記共反応物が、アンモニア、窒素分子、又はヒドラジンを含み、前記膜が窒化ケイ素を含むものである、前記共反応物が、有機ヒドラジン、アミン、又はイミンを含み、前記膜が炭窒化ケイ素を含むものである、前記共反応物が、酸素分子、オゾン、水、又は過酸化水素を含み、前記膜が酸化ケイ素を含むものである、前記共反応物が酸化窒素又は二酸化窒素を含み、前記膜が酸窒化ケイ素を含むものである、前記共反応物がアルコールを含み、前記膜が酸炭窒化ケイ素を含むものである、請求項9、10、又は11に記載の方法。
- 基材上にケイ素含有膜を堆積する方法であって、前記基材の存在下で前記基材上に前記ケイ素含有膜を形成するために、チオ(ジ)シランを分解する条件下で、前記チオ(ジ)シランを加熱して、式SiS2の二硫化ケイ素及び副生成物を形成すること、を含み、前記二硫化ケイ素及び前記副生成物が、異なる組成を有する、方法。
- 前記チオ(ジ)シランが、ジ−、トリ、又はテトラチオジシランである、請求項13に記載の方法。
- ケイ素合金を形成する方法であって、二硫化ケイ素をオゾン又は窒素担持前駆体と反応させること、を含む、方法。
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CN109804100A (zh) | 2019-05-24 |
WO2018071371A1 (en) | 2018-04-19 |
JP6790281B2 (ja) | 2020-11-25 |
CN109804100B (zh) | 2021-06-11 |
JP2019532061A (ja) | 2019-11-07 |
EP3526364A1 (en) | 2019-08-21 |
US11598002B2 (en) | 2023-03-07 |
KR20190058567A (ko) | 2019-05-29 |
EP3526365B1 (en) | 2020-11-25 |
US20200024737A1 (en) | 2020-01-23 |
EP3526365A1 (en) | 2019-08-21 |
CN110036138A (zh) | 2019-07-19 |
WO2018071379A1 (en) | 2018-04-19 |
TW201813972A (zh) | 2018-04-16 |
TW201813971A (zh) | 2018-04-16 |
CN110036138B (zh) | 2023-01-10 |
US20200024291A1 (en) | 2020-01-23 |
KR20190058566A (ko) | 2019-05-29 |
KR102276834B1 (ko) | 2021-07-14 |
KR102210581B1 (ko) | 2021-02-02 |
JP6949947B2 (ja) | 2021-10-13 |
US11479858B2 (en) | 2022-10-25 |
TWI746664B (zh) | 2021-11-21 |
TWI756277B (zh) | 2022-03-01 |
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