JP6930826B2 - 熱閉塞体を備える静電チャック - Google Patents

熱閉塞体を備える静電チャック Download PDF

Info

Publication number
JP6930826B2
JP6930826B2 JP2016195343A JP2016195343A JP6930826B2 JP 6930826 B2 JP6930826 B2 JP 6930826B2 JP 2016195343 A JP2016195343 A JP 2016195343A JP 2016195343 A JP2016195343 A JP 2016195343A JP 6930826 B2 JP6930826 B2 JP 6930826B2
Authority
JP
Japan
Prior art keywords
heat
electrostatic chuck
layer
esc
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016195343A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017085089A (ja
JP2017085089A5 (https=
Inventor
マオリン・ロング
アレックス・パターソン
イン・ウー
チュエン・チャウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2017085089A publication Critical patent/JP2017085089A/ja
Publication of JP2017085089A5 publication Critical patent/JP2017085089A5/ja
Application granted granted Critical
Publication of JP6930826B2 publication Critical patent/JP6930826B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016195343A 2015-10-05 2016-10-03 熱閉塞体を備える静電チャック Active JP6930826B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/875,473 2015-10-05
US14/875,473 US9805963B2 (en) 2015-10-05 2015-10-05 Electrostatic chuck with thermal choke

Publications (3)

Publication Number Publication Date
JP2017085089A JP2017085089A (ja) 2017-05-18
JP2017085089A5 JP2017085089A5 (https=) 2019-11-14
JP6930826B2 true JP6930826B2 (ja) 2021-09-01

Family

ID=58448019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016195343A Active JP6930826B2 (ja) 2015-10-05 2016-10-03 熱閉塞体を備える静電チャック

Country Status (4)

Country Link
US (1) US9805963B2 (https=)
JP (1) JP6930826B2 (https=)
KR (1) KR102648014B1 (https=)
TW (1) TWI717394B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI635282B (zh) * 2017-08-29 2018-09-11 創意電子股份有限公司 半導體元件之測試設備及其搬運裝置
US11515130B2 (en) * 2018-03-05 2022-11-29 Applied Materials, Inc. Fast response pedestal assembly for selective preclean
CN110911332B (zh) * 2018-09-14 2022-11-25 北京北方华创微电子装备有限公司 静电卡盘
JP7002014B2 (ja) * 2018-10-30 2022-01-20 Toto株式会社 静電チャック
CN111668151B (zh) * 2019-03-05 2024-06-25 Toto株式会社 静电吸盘及处理装置
JP7441404B2 (ja) 2019-03-05 2024-03-01 Toto株式会社 静電チャック、および処理装置
US12131890B2 (en) 2019-03-08 2024-10-29 Lam Research Corporation Chuck for plasma processing chamber
KR102810211B1 (ko) * 2019-06-07 2025-05-19 어플라이드 머티어리얼스, 인코포레이티드 심리스 전기 도관
CN112768331B (zh) * 2019-11-01 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其下电极组件、静电卡盘
JP7550551B2 (ja) * 2020-06-30 2024-09-13 京セラ株式会社 静電チャック
US20220301914A1 (en) * 2021-03-22 2022-09-22 Tokyo Electron Limited Electrostatic chuck for a plasma processing apparatus
JP7725614B2 (ja) * 2021-05-14 2025-08-19 アプライド マテリアルズ インコーポレイテッド 高速排熱能力を備えた高温サセプタ
US12563991B2 (en) * 2021-08-25 2026-02-24 Applied Materials, Inc. Thermal choke plate
US11764094B2 (en) * 2022-02-18 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
JP7845786B2 (ja) * 2022-04-27 2026-04-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
JPH07183277A (ja) * 1993-12-21 1995-07-21 Tokyo Electron Ltd 処理装置
JP3370489B2 (ja) * 1995-08-31 2003-01-27 京セラ株式会社 静電チャック
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
KR19980071011A (ko) 1997-01-24 1998-10-26 조셉 제이. 스위니 고온 및 고 흐름 속도의 화학적 기상 증착 장치 및 관련증착 방법
US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US5841624A (en) 1997-06-09 1998-11-24 Applied Materials, Inc. Cover layer for a substrate support chuck and method of fabricating same
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6219219B1 (en) 1998-09-30 2001-04-17 Applied Materials, Inc. Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system
US6291777B1 (en) 1999-02-17 2001-09-18 Applied Materials, Inc. Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same
US6242360B1 (en) * 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6563686B2 (en) 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6669783B2 (en) 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US20030047283A1 (en) * 2001-09-10 2003-03-13 Applied Materials, Inc. Apparatus for supporting a substrate and method of fabricating same
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20040025791A1 (en) 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US20060237138A1 (en) 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
KR101312292B1 (ko) 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
JP4944600B2 (ja) * 2006-12-28 2012-06-06 新光電気工業株式会社 基板温調固定装置
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8149562B2 (en) * 2007-03-09 2012-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
KR101582785B1 (ko) 2008-08-12 2016-01-07 어플라이드 머티어리얼스, 인코포레이티드 정전 척 조립체
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5143184B2 (ja) 2010-05-07 2013-02-13 日本碍子株式会社 ウエハー載置装置の製造方法
JP6052169B2 (ja) * 2011-04-27 2016-12-27 住友大阪セメント株式会社 静電チャック装置
US9337067B2 (en) 2011-05-13 2016-05-10 Novellus Systems, Inc. High temperature electrostatic chuck with radial thermal chokes
WO2013078152A1 (en) * 2011-11-23 2013-05-30 Lam Research Corporation Peripheral rf feed and symmetric rf return with rf strap input
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
TWI609991B (zh) * 2013-06-05 2018-01-01 維克儀器公司 具有熱一致性改善特色的晶圓舟盒
TW201518538A (zh) 2013-11-11 2015-05-16 應用材料股份有限公司 像素化冷卻溫度控制的基板支撐組件

Also Published As

Publication number Publication date
TWI717394B (zh) 2021-02-01
JP2017085089A (ja) 2017-05-18
KR102648014B1 (ko) 2024-03-14
TW201725652A (zh) 2017-07-16
US20170098566A1 (en) 2017-04-06
US9805963B2 (en) 2017-10-31
KR20170044012A (ko) 2017-04-24

Similar Documents

Publication Publication Date Title
JP6930826B2 (ja) 熱閉塞体を備える静電チャック
US10490434B2 (en) Biasable rotatable electrostatic chuck
JP7069262B2 (ja) 高温ｒｆ用途のための静電チャック
JP6717985B2 (ja) ガス孔に開口縮小プラグを有する大電力静電チャック
JP6475031B2 (ja) 静電チャック
CN112053988B (zh) 具有独立隔离的加热器区域的晶片载体
KR20230132401A (ko) 정전척 어셈블리
KR102383357B1 (ko) 배치대 및 기판 처리 장치
KR102213395B1 (ko) 정전 척 기구 및 반도체 처리 장치
KR102470943B1 (ko) 배치대 및 플라즈마 처리 장치
US10784139B2 (en) Rotatable electrostatic chuck having backside gas supply
KR20160015510A (ko) 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
TW201826389A (zh) 電漿處理裝置
JP2011091361A (ja) 静電チャック
JP2017085089A5 (https=)
CN108074855B (zh) 含形成法拉第笼的部分的夹持组件的静电卡盘和相关方法
TWI861442B (zh) 用於半導體加工的高熱量損失加熱器與靜電卡盤
JP2010157559A (ja) プラズマ処置装置
US20260088735A1 (en) Electrostatic chuck
JP7494972B1 (ja) 静電チャック
KR20250151177A (ko) 기판 고정 장치
KR20100099485A (ko) 플라즈마 처리장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191001

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191001

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20201130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201215

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210308

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210607

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210713

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210812

R150 Certificate of patent or registration of utility model

Ref document number: 6930826

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250