KR102648014B1 - 열 초크를 갖는 정전 척 - Google Patents

열 초크를 갖는 정전 척 Download PDF

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Publication number
KR102648014B1
KR102648014B1 KR1020160125726A KR20160125726A KR102648014B1 KR 102648014 B1 KR102648014 B1 KR 102648014B1 KR 1020160125726 A KR1020160125726 A KR 1020160125726A KR 20160125726 A KR20160125726 A KR 20160125726A KR 102648014 B1 KR102648014 B1 KR 102648014B1
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KR
South Korea
Prior art keywords
cavities
thermal
esc
layer
base plate
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KR1020160125726A
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English (en)
Korean (ko)
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KR20170044012A (ko
Inventor
마오린 롱
알렉스 패터슨
잉 우
취안 차우
Original Assignee
램 리써치 코포레이션
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Publication of KR20170044012A publication Critical patent/KR20170044012A/ko
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Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/324—
    • H01L21/67098—
    • H01L21/6831—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020160125726A 2015-10-05 2016-09-29 열 초크를 갖는 정전 척 Active KR102648014B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/875,473 2015-10-05
US14/875,473 US9805963B2 (en) 2015-10-05 2015-10-05 Electrostatic chuck with thermal choke

Publications (2)

Publication Number Publication Date
KR20170044012A KR20170044012A (ko) 2017-04-24
KR102648014B1 true KR102648014B1 (ko) 2024-03-14

Family

ID=58448019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160125726A Active KR102648014B1 (ko) 2015-10-05 2016-09-29 열 초크를 갖는 정전 척

Country Status (4)

Country Link
US (1) US9805963B2 (https=)
JP (1) JP6930826B2 (https=)
KR (1) KR102648014B1 (https=)
TW (1) TWI717394B (https=)

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US11515130B2 (en) * 2018-03-05 2022-11-29 Applied Materials, Inc. Fast response pedestal assembly for selective preclean
CN110911332B (zh) * 2018-09-14 2022-11-25 北京北方华创微电子装备有限公司 静电卡盘
JP7002014B2 (ja) * 2018-10-30 2022-01-20 Toto株式会社 静電チャック
CN111668151B (zh) * 2019-03-05 2024-06-25 Toto株式会社 静电吸盘及处理装置
JP7441404B2 (ja) 2019-03-05 2024-03-01 Toto株式会社 静電チャック、および処理装置
US12131890B2 (en) 2019-03-08 2024-10-29 Lam Research Corporation Chuck for plasma processing chamber
KR102810211B1 (ko) * 2019-06-07 2025-05-19 어플라이드 머티어리얼스, 인코포레이티드 심리스 전기 도관
CN112768331B (zh) * 2019-11-01 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其下电极组件、静电卡盘
JP7550551B2 (ja) * 2020-06-30 2024-09-13 京セラ株式会社 静電チャック
US20220301914A1 (en) * 2021-03-22 2022-09-22 Tokyo Electron Limited Electrostatic chuck for a plasma processing apparatus
JP7725614B2 (ja) * 2021-05-14 2025-08-19 アプライド マテリアルズ インコーポレイテッド 高速排熱能力を備えた高温サセプタ
US12563991B2 (en) * 2021-08-25 2026-02-24 Applied Materials, Inc. Thermal choke plate
US11764094B2 (en) * 2022-02-18 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
JP7845786B2 (ja) * 2022-04-27 2026-04-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
JP2006522452A (ja) * 2003-03-31 2006-09-28 ラム　リサーチ　コーポレーション 温度制御された基板支持体表面を有する基板支持体
JP2008166508A (ja) * 2006-12-28 2008-07-17 Shinko Electric Ind Co Ltd 静電チャック及びその製造方法、及び基板温調固定装置

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JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
JPH07183277A (ja) * 1993-12-21 1995-07-21 Tokyo Electron Ltd 処理装置
JP3370489B2 (ja) * 1995-08-31 2003-01-27 京セラ株式会社 静電チャック
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
KR19980071011A (ko) 1997-01-24 1998-10-26 조셉 제이. 스위니 고온 및 고 흐름 속도의 화학적 기상 증착 장치 및 관련증착 방법
US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US5841624A (en) 1997-06-09 1998-11-24 Applied Materials, Inc. Cover layer for a substrate support chuck and method of fabricating same
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
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US6291777B1 (en) 1999-02-17 2001-09-18 Applied Materials, Inc. Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same
US6242360B1 (en) * 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6563686B2 (en) 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6669783B2 (en) 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US20030047283A1 (en) * 2001-09-10 2003-03-13 Applied Materials, Inc. Apparatus for supporting a substrate and method of fabricating same
US20040025791A1 (en) 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US20060237138A1 (en) 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
KR101312292B1 (ko) 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8149562B2 (en) * 2007-03-09 2012-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
KR101582785B1 (ko) 2008-08-12 2016-01-07 어플라이드 머티어리얼스, 인코포레이티드 정전 척 조립체
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5143184B2 (ja) 2010-05-07 2013-02-13 日本碍子株式会社 ウエハー載置装置の製造方法
JP6052169B2 (ja) * 2011-04-27 2016-12-27 住友大阪セメント株式会社 静電チャック装置
US9337067B2 (en) 2011-05-13 2016-05-10 Novellus Systems, Inc. High temperature electrostatic chuck with radial thermal chokes
WO2013078152A1 (en) * 2011-11-23 2013-05-30 Lam Research Corporation Peripheral rf feed and symmetric rf return with rf strap input
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
TWI609991B (zh) * 2013-06-05 2018-01-01 維克儀器公司 具有熱一致性改善特色的晶圓舟盒
TW201518538A (zh) 2013-11-11 2015-05-16 應用材料股份有限公司 像素化冷卻溫度控制的基板支撐組件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
JP2006522452A (ja) * 2003-03-31 2006-09-28 ラム　リサーチ　コーポレーション 温度制御された基板支持体表面を有する基板支持体
JP2008166508A (ja) * 2006-12-28 2008-07-17 Shinko Electric Ind Co Ltd 静電チャック及びその製造方法、及び基板温調固定装置

Also Published As

Publication number Publication date
TWI717394B (zh) 2021-02-01
JP2017085089A (ja) 2017-05-18
JP6930826B2 (ja) 2021-09-01
TW201725652A (zh) 2017-07-16
US20170098566A1 (en) 2017-04-06
US9805963B2 (en) 2017-10-31
KR20170044012A (ko) 2017-04-24

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