JP6929072B2 - 研磨パッドの表面温度を調整するための装置および方法 - Google Patents

研磨パッドの表面温度を調整するための装置および方法 Download PDF

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Publication number
JP6929072B2
JP6929072B2 JP2017015389A JP2017015389A JP6929072B2 JP 6929072 B2 JP6929072 B2 JP 6929072B2 JP 2017015389 A JP2017015389 A JP 2017015389A JP 2017015389 A JP2017015389 A JP 2017015389A JP 6929072 B2 JP6929072 B2 JP 6929072B2
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Japan
Prior art keywords
flow path
heating
pad
polishing pad
flow rate
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JP2017015389A
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English (en)
Japanese (ja)
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JP2017148933A (ja
Inventor
丸山　徹
徹 丸山
松尾　尚典
尚典 松尾
本島　靖之
靖之 本島
洋平 江藤
洋平 江藤
三教 小松
三教 小松
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Ebara Corp
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Ebara Corp
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Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to KR1020170021358A priority Critical patent/KR102604745B1/ko
Priority to SG10201701274YA priority patent/SG10201701274YA/en
Priority to US15/436,559 priority patent/US10414018B2/en
Priority to TW106105566A priority patent/TWI742041B/zh
Priority to CN201710096031.5A priority patent/CN107097145B/zh
Publication of JP2017148933A publication Critical patent/JP2017148933A/ja
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Publication of JP6929072B2 publication Critical patent/JP6929072B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2017015389A 2016-02-22 2017-01-31 研磨パッドの表面温度を調整するための装置および方法 Active JP6929072B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020170021358A KR102604745B1 (ko) 2016-02-22 2017-02-17 연마 패드의 표면 온도를 조정하기 위한 장치 및 방법
SG10201701274YA SG10201701274YA (en) 2016-02-22 2017-02-17 Apparatus and method for regulating surface temperature of polishing pad
US15/436,559 US10414018B2 (en) 2016-02-22 2017-02-17 Apparatus and method for regulating surface temperature of polishing pad
TW106105566A TWI742041B (zh) 2016-02-22 2017-02-20 用以調整研磨墊之表面溫度的裝置及方法
CN201710096031.5A CN107097145B (zh) 2016-02-22 2017-02-22 研磨装置、用于对研磨垫的表面温度进行调整的装置和方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016031083 2016-02-22
JP2016031083 2016-02-22

Publications (2)

Publication Number Publication Date
JP2017148933A JP2017148933A (ja) 2017-08-31
JP6929072B2 true JP6929072B2 (ja) 2021-09-01

Family

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JP2017015389A Active JP6929072B2 (ja) 2016-02-22 2017-01-31 研磨パッドの表面温度を調整するための装置および方法

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Country Link
JP (1) JP6929072B2 (zh)
KR (1) KR102604745B1 (zh)
SG (1) SG10201701274YA (zh)
TW (1) TWI742041B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059117B2 (ja) * 2017-10-31 2022-04-25 株式会社荏原製作所 研磨パッドの研磨面の温度を調整するための熱交換器、該熱交換器を備えた研磨装置、該熱交換器を用いた基板の研磨方法、および研磨パッドの研磨面の温度を調整するためのプログラムを記録したコンピュータ読み取り可能な記録媒体
US20190126428A1 (en) * 2017-10-31 2019-05-02 Ebara Corporation Heat exchanger for regulating temperature of polishing surface of polishing pad, polishing apparatus having such heat exchanger, polishing method for substrate using such heat exchanger, and computer-readable storage medium storing a program for regulating temperature of polishing surface of polishing pad
JP2019181607A (ja) * 2018-04-06 2019-10-24 株式会社荏原製作所 研磨パッドの表面温度の調整方法、および研磨装置
JP7064979B2 (ja) * 2018-06-25 2022-05-11 株式会社荏原製作所 流体の漏洩を確認する方法、および研磨装置
JP7066599B2 (ja) 2018-11-28 2022-05-13 株式会社荏原製作所 温度調整装置及び研磨装置
WO2020137802A1 (ja) 2018-12-28 2020-07-02 株式会社荏原製作所 パッド温度調整装置、パッド温度調整方法、研磨装置、および研磨システム
CN113196199B (zh) 2019-01-10 2023-09-22 株式会社Kelk 温度控制系统以及温度控制方法
JP7240931B2 (ja) * 2019-03-29 2023-03-16 株式会社荏原製作所 熱交換器の洗浄装置、および研磨装置
JP7217202B2 (ja) * 2019-05-31 2023-02-02 株式会社荏原製作所 温度調整装置および研磨装置
US11642751B2 (en) 2019-06-11 2023-05-09 Ebara Corporation Polishing method and polishing apparatus
US11897079B2 (en) * 2019-08-13 2024-02-13 Applied Materials, Inc. Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity
JP7397617B2 (ja) * 2019-10-16 2023-12-13 株式会社荏原製作所 研磨装置
JP7236990B2 (ja) 2019-12-09 2023-03-10 株式会社荏原製作所 パッドの表面温度を調整するためのシステムおよび研磨装置
JP7421413B2 (ja) 2020-05-08 2024-01-24 株式会社荏原製作所 パッド温度調整装置、パッド温度調整方法、および研磨装置
JP2022149635A (ja) 2021-03-25 2022-10-07 株式会社荏原製作所 パッド温度調整装置、および研磨装置
JP2022165024A (ja) 2021-04-19 2022-10-31 株式会社荏原製作所 研磨方法、および研磨装置
KR20220148106A (ko) 2021-04-28 2022-11-04 에바라코포레이숀 연마 장치, 및 연마 방법
CN114800147B (zh) * 2022-04-29 2022-12-23 江苏华杰不锈钢制品有限公司 一种用于废旧钢料的研磨装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3235970B2 (ja) * 1997-04-07 2001-12-04 株式会社ノリタケカンパニーリミテド 回転定盤の温度保持構造
US6705923B2 (en) * 2002-04-25 2004-03-16 Taiwan Semiconductor Manufacturing Co., Ltd Chemical mechanical polisher equipped with chilled wafer holder and polishing pad and method of using
JPWO2004079805A1 (ja) * 2003-03-07 2006-06-08 東京エレクトロン株式会社 基板処理装置及び温度調節装置
KR101024356B1 (ko) * 2008-11-28 2011-03-23 세메스 주식회사 기판 코팅 유닛, 이를 갖는 기판 처리 장치 및 이를 이용한기판 처리 방법
JP6161999B2 (ja) 2013-08-27 2017-07-12 株式会社荏原製作所 研磨方法および研磨装置
JP6263092B2 (ja) * 2014-06-23 2018-01-17 株式会社荏原製作所 研磨パッドの温度調節システムおよびこれを備えた基板処理装置
JP6580939B2 (ja) * 2015-10-20 2019-09-25 株式会社荏原製作所 研磨装置

Also Published As

Publication number Publication date
TW201729944A (zh) 2017-09-01
JP2017148933A (ja) 2017-08-31
KR102604745B1 (ko) 2023-11-22
KR20170098703A (ko) 2017-08-30
TWI742041B (zh) 2021-10-11
SG10201701274YA (en) 2017-09-28

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