JP6925717B2 - チップの製造方法 - Google Patents

チップの製造方法 Download PDF

Info

Publication number
JP6925717B2
JP6925717B2 JP2017110732A JP2017110732A JP6925717B2 JP 6925717 B2 JP6925717 B2 JP 6925717B2 JP 2017110732 A JP2017110732 A JP 2017110732A JP 2017110732 A JP2017110732 A JP 2017110732A JP 6925717 B2 JP6925717 B2 JP 6925717B2
Authority
JP
Japan
Prior art keywords
workpiece
holding
chip
modified layer
reinforcing portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017110732A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018206941A5 (enExample
JP2018206941A (ja
Inventor
良彰 淀
良彰 淀
金艶 趙
金艶 趙
成規 原田
成規 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017110732A priority Critical patent/JP6925717B2/ja
Priority to TW107114205A priority patent/TWI765027B/zh
Priority to CN201810527430.7A priority patent/CN108987339B/zh
Priority to KR1020180062576A priority patent/KR102554147B1/ko
Publication of JP2018206941A publication Critical patent/JP2018206941A/ja
Publication of JP2018206941A5 publication Critical patent/JP2018206941A5/ja
Application granted granted Critical
Publication of JP6925717B2 publication Critical patent/JP6925717B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2017110732A 2017-06-05 2017-06-05 チップの製造方法 Active JP6925717B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017110732A JP6925717B2 (ja) 2017-06-05 2017-06-05 チップの製造方法
TW107114205A TWI765027B (zh) 2017-06-05 2018-04-26 晶片的製造方法
CN201810527430.7A CN108987339B (zh) 2017-06-05 2018-05-29 芯片的制造方法
KR1020180062576A KR102554147B1 (ko) 2017-06-05 2018-05-31 칩의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017110732A JP6925717B2 (ja) 2017-06-05 2017-06-05 チップの製造方法

Publications (3)

Publication Number Publication Date
JP2018206941A JP2018206941A (ja) 2018-12-27
JP2018206941A5 JP2018206941A5 (enExample) 2020-03-05
JP6925717B2 true JP6925717B2 (ja) 2021-08-25

Family

ID=64542716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017110732A Active JP6925717B2 (ja) 2017-06-05 2017-06-05 チップの製造方法

Country Status (4)

Country Link
JP (1) JP6925717B2 (enExample)
KR (1) KR102554147B1 (enExample)
CN (1) CN108987339B (enExample)
TW (1) TWI765027B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3913660B1 (en) * 2020-05-22 2024-06-19 Nichia Corporation Method of cutting semiconductor element and semiconductor element
CN112404747B (zh) * 2020-11-09 2022-05-24 松山湖材料实验室 一种晶圆剥离方法和晶圆剥离装置
CN119525777B (zh) * 2025-01-23 2025-04-25 合肥芯谷微电子股份有限公司 一种半导体生产用防护输送载具

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198783A (ja) * 1992-01-23 1993-08-06 Hitachi Ltd 半導体集積回路装置の製造方法
JPH06275712A (ja) * 1993-03-24 1994-09-30 Nec Kansai Ltd ダイシング装置
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP4733934B2 (ja) * 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP2007012878A (ja) * 2005-06-30 2007-01-18 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
JP4749851B2 (ja) * 2005-11-29 2011-08-17 株式会社ディスコ ウェーハの分割方法
JP2007223854A (ja) * 2006-02-24 2007-09-06 Seiko Epson Corp 基板分割方法、基板分割装置、レーザスクライブ装置、電気光学装置、電子機器
JP2008153420A (ja) * 2006-12-18 2008-07-03 Seiko Epson Corp 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法
JP5139739B2 (ja) * 2007-07-19 2013-02-06 パナソニック株式会社 積層体の割断方法
JP2009043992A (ja) 2007-08-09 2009-02-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010186971A (ja) 2009-02-13 2010-08-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP5967405B2 (ja) * 2012-01-17 2016-08-10 アイシン精機株式会社 レーザによる割断方法、及びレーザ割断装置
JP2013152988A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5988601B2 (ja) * 2012-02-13 2016-09-07 株式会社ディスコ 光デバイスウェーハの分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014209523A (ja) * 2013-04-16 2014-11-06 株式会社ディスコ ウェーハの加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015069975A (ja) * 2013-09-26 2015-04-13 株式会社ディスコ 被加工物の加工方法
JP6366393B2 (ja) * 2014-07-15 2018-08-01 株式会社ディスコ ウェーハの加工方法
JP6347714B2 (ja) * 2014-10-02 2018-06-27 株式会社ディスコ ウエーハの加工方法
JP2017011134A (ja) * 2015-06-23 2017-01-12 株式会社ディスコ デバイスチップの製造方法
JP6775880B2 (ja) * 2016-09-21 2020-10-28 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
CN108987339B (zh) 2023-12-15
TWI765027B (zh) 2022-05-21
KR20180133215A (ko) 2018-12-13
TW201903875A (zh) 2019-01-16
CN108987339A (zh) 2018-12-11
JP2018206941A (ja) 2018-12-27
KR102554147B1 (ko) 2023-07-10

Similar Documents

Publication Publication Date Title
JP6925717B2 (ja) チップの製造方法
JP6855127B2 (ja) チップの製造方法
JP6925720B2 (ja) チップの製造方法
JP6896344B2 (ja) チップの製造方法
JP6925721B2 (ja) チップの製造方法
JP7031963B2 (ja) チップの製造方法
JP6851690B2 (ja) チップの製造方法
JP7031967B2 (ja) チップの製造方法
JP6851691B2 (ja) チップの製造方法
JP7058905B2 (ja) チップの製造方法
JP6925718B2 (ja) チップの製造方法
JP6925719B2 (ja) チップの製造方法
JP6821265B2 (ja) チップの製造方法
JP6830739B2 (ja) チップの製造方法
JP7031964B2 (ja) チップの製造方法
JP6925722B2 (ja) チップの製造方法
JP7031968B2 (ja) チップの製造方法
JP7031966B2 (ja) チップの製造方法
JP6851692B2 (ja) チップの製造方法
JP7031965B2 (ja) チップの製造方法
JP6918422B2 (ja) チップの製造方法
JP6903378B2 (ja) チップの製造方法
JP6918424B2 (ja) チップの製造方法
JP6903379B2 (ja) チップの製造方法
JP6918423B2 (ja) チップの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210216

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210409

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210506

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210629

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210803

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210803

R150 Certificate of patent or registration of utility model

Ref document number: 6925717

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250