CN108987339B - 芯片的制造方法 - Google Patents

芯片的制造方法 Download PDF

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Publication number
CN108987339B
CN108987339B CN201810527430.7A CN201810527430A CN108987339B CN 108987339 B CN108987339 B CN 108987339B CN 201810527430 A CN201810527430 A CN 201810527430A CN 108987339 B CN108987339 B CN 108987339B
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China
Prior art keywords
workpiece
silicon wafer
chip
dividing
holding
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CN201810527430.7A
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English (en)
Chinese (zh)
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CN108987339A (zh
Inventor
淀良彰
赵金艳
原田成规
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Disco Corp
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Disco Corp
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Publication of CN108987339A publication Critical patent/CN108987339A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
CN201810527430.7A 2017-06-05 2018-05-29 芯片的制造方法 Active CN108987339B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017110732A JP6925717B2 (ja) 2017-06-05 2017-06-05 チップの製造方法
JP2017-110732 2017-06-05

Publications (2)

Publication Number Publication Date
CN108987339A CN108987339A (zh) 2018-12-11
CN108987339B true CN108987339B (zh) 2023-12-15

Family

ID=64542716

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810527430.7A Active CN108987339B (zh) 2017-06-05 2018-05-29 芯片的制造方法

Country Status (4)

Country Link
JP (1) JP6925717B2 (enExample)
KR (1) KR102554147B1 (enExample)
CN (1) CN108987339B (enExample)
TW (1) TWI765027B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3913660B1 (en) * 2020-05-22 2024-06-19 Nichia Corporation Method of cutting semiconductor element and semiconductor element
CN112404747B (zh) * 2020-11-09 2022-05-24 松山湖材料实验室 一种晶圆剥离方法和晶圆剥离装置
CN119525777B (zh) * 2025-01-23 2025-04-25 合肥芯谷微电子股份有限公司 一种半导体生产用防护输送载具

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198783A (ja) * 1992-01-23 1993-08-06 Hitachi Ltd 半導体集積回路装置の製造方法
JPH06275712A (ja) * 1993-03-24 1994-09-30 Nec Kansai Ltd ダイシング装置
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
CN105280543A (zh) * 2014-07-15 2016-01-27 株式会社迪思科 晶片的加工方法
CN105479019A (zh) * 2014-10-02 2016-04-13 株式会社迪思科 晶片的加工方法
JP2017011134A (ja) * 2015-06-23 2017-01-12 株式会社ディスコ デバイスチップの製造方法
CN107863293A (zh) * 2016-09-21 2018-03-30 株式会社迪思科 晶片的加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4733934B2 (ja) * 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP2007012878A (ja) * 2005-06-30 2007-01-18 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
JP4749851B2 (ja) * 2005-11-29 2011-08-17 株式会社ディスコ ウェーハの分割方法
JP2007223854A (ja) * 2006-02-24 2007-09-06 Seiko Epson Corp 基板分割方法、基板分割装置、レーザスクライブ装置、電気光学装置、電子機器
JP2008153420A (ja) * 2006-12-18 2008-07-03 Seiko Epson Corp 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法
JP5139739B2 (ja) * 2007-07-19 2013-02-06 パナソニック株式会社 積層体の割断方法
JP2009043992A (ja) 2007-08-09 2009-02-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010186971A (ja) 2009-02-13 2010-08-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP5967405B2 (ja) * 2012-01-17 2016-08-10 アイシン精機株式会社 レーザによる割断方法、及びレーザ割断装置
JP2013152988A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5988601B2 (ja) * 2012-02-13 2016-09-07 株式会社ディスコ 光デバイスウェーハの分割方法
JP2014209523A (ja) * 2013-04-16 2014-11-06 株式会社ディスコ ウェーハの加工方法
JP2015069975A (ja) * 2013-09-26 2015-04-13 株式会社ディスコ 被加工物の加工方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198783A (ja) * 1992-01-23 1993-08-06 Hitachi Ltd 半導体集積回路装置の製造方法
JPH06275712A (ja) * 1993-03-24 1994-09-30 Nec Kansai Ltd ダイシング装置
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
CN105280543A (zh) * 2014-07-15 2016-01-27 株式会社迪思科 晶片的加工方法
CN105479019A (zh) * 2014-10-02 2016-04-13 株式会社迪思科 晶片的加工方法
JP2017011134A (ja) * 2015-06-23 2017-01-12 株式会社ディスコ デバイスチップの製造方法
CN107863293A (zh) * 2016-09-21 2018-03-30 株式会社迪思科 晶片的加工方法

Also Published As

Publication number Publication date
TWI765027B (zh) 2022-05-21
KR20180133215A (ko) 2018-12-13
TW201903875A (zh) 2019-01-16
CN108987339A (zh) 2018-12-11
JP2018206941A (ja) 2018-12-27
KR102554147B1 (ko) 2023-07-10
JP6925717B2 (ja) 2021-08-25

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