JP6924085B2 - 光検出装置及び撮像システム - Google Patents

光検出装置及び撮像システム Download PDF

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Publication number
JP6924085B2
JP6924085B2 JP2017124862A JP2017124862A JP6924085B2 JP 6924085 B2 JP6924085 B2 JP 6924085B2 JP 2017124862 A JP2017124862 A JP 2017124862A JP 2017124862 A JP2017124862 A JP 2017124862A JP 6924085 B2 JP6924085 B2 JP 6924085B2
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voltage
circuit
node
power supply
switch
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Japanese (ja)
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JP2019007877A5 (enExample
JP2019007877A (ja
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達人 郷田
達人 郷田
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Canon Inc
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Canon Inc
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Priority to JP2017124862A priority Critical patent/JP6924085B2/ja
Priority to US16/013,177 priority patent/US11169022B2/en
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Publication of JP2019007877A5 publication Critical patent/JP2019007877A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
    • B60R11/04—Mounting of cameras operative during drive; Arrangement of controls thereof relative to the vehicle
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • G01C3/085—Use of electric radiation detectors with electronic parallax measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4413—Type
    • G01J2001/442—Single-photon detection or photon counting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30248—Vehicle exterior or interior
    • G06T2207/30252—Vehicle exterior; Vicinity of vehicle
    • G06T2207/30261—Obstacle
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/50—Depth or shape recovery
    • G06T7/55—Depth or shape recovery from multiple images

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
JP2017124862A 2017-06-27 2017-06-27 光検出装置及び撮像システム Active JP6924085B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017124862A JP6924085B2 (ja) 2017-06-27 2017-06-27 光検出装置及び撮像システム
US16/013,177 US11169022B2 (en) 2017-06-27 2018-06-20 Photo-detection device and imaging system

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JP2017124862A JP6924085B2 (ja) 2017-06-27 2017-06-27 光検出装置及び撮像システム

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JP2019007877A JP2019007877A (ja) 2019-01-17
JP2019007877A5 JP2019007877A5 (enExample) 2020-08-13
JP6924085B2 true JP6924085B2 (ja) 2021-08-25

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
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JP2019075440A (ja) * 2017-10-13 2019-05-16 キヤノン株式会社 光検出装置、撮像装置、及び撮像システム
CN115278128B (zh) 2017-10-31 2026-01-16 索尼半导体解决方案公司 光检测设备
JP7154795B2 (ja) 2018-03-29 2022-10-18 キヤノン株式会社 撮像装置、撮像システム、および移動体
CN112585953B (zh) * 2018-09-06 2024-05-14 松下知识产权经营株式会社 固体摄像元件、摄像系统、固体摄像元件的驱动方法及光检测器
EP3660473B1 (en) * 2018-11-30 2024-09-18 STMicroelectronics (Research & Development) Limited Apparatus and method for controlling the voltage applied to a single photon avalanche photodiode (spad)
US11108980B2 (en) * 2019-02-04 2021-08-31 Semiconductor Components Industries, Llc Semiconductor devices with single-photon avalanche diode pixels
JP7555703B2 (ja) 2019-02-25 2024-09-25 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP2020148537A (ja) * 2019-03-12 2020-09-17 ソニーセミコンダクタソリューションズ株式会社 制御回路および測距システム
JP7079753B2 (ja) * 2019-06-11 2022-06-02 株式会社東芝 光検出装置、電子装置及び光検出方法
JP7443006B2 (ja) * 2019-09-19 2024-03-05 株式会社東芝 光検出器及び距離測定装置
JP7621961B2 (ja) * 2019-11-05 2025-01-27 ソニーセミコンダクタソリューションズ株式会社 センシングデバイスおよび測距装置
JP7638664B2 (ja) * 2020-01-31 2025-03-04 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7527806B2 (ja) 2020-02-19 2024-08-05 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP2022083067A (ja) * 2020-11-24 2022-06-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および撮像装置、並びに電子機器
TWI913367B (zh) * 2021-01-06 2026-02-01 日商索尼半導體解決方案公司 受光元件及測距系統
JP7558821B2 (ja) 2021-01-22 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7414748B2 (ja) * 2021-01-22 2024-01-16 キヤノン株式会社 光電変換装置及び光検出システム
JPWO2022202451A1 (enExample) * 2021-03-22 2022-09-29

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US20180372539A1 (en) 2018-12-27
US11169022B2 (en) 2021-11-09
JP2019007877A (ja) 2019-01-17

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